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61.
S. K. Chen A. Serquis G. Serrano K. A. Yates M. G. Blamire D. Guthrie J. Cooper H. Wang S. Margadonna J. L. MacManus‐Driscoll 《Advanced functional materials》2008,18(1):113-120
By applying a combination of characterisation tools, changes in structural and superconducting properties with nominal Mg non‐stoichiometry in MgxB2 are found. The non‐stoichiometry produces enhanced in‐field critical current densities (Jc's) and upper critical field / irreversibility field (Hc2/Hirr(T)) values. Upper critical fields of ~ 21 T (4.2 K) were obtained in nominal Mg‐deficient samples compared to ~ 17 T (4.2 K) for near‐stoichiometric samples. 相似文献
62.
In this paper we consider the numerical approximation of steady and unsteady generalized Newtonian fluid flows using divergence free finite elements generated by the Powell–Sabin–Heindl elements. We derive a priori and a posteriori finite element error estimates and prove convergence of the method of successive approximations for the steady flow case. A priori error estimates of unsteady flows are also considered. These results provide a theoretical foundation and supporting numerical studies are to be provided in Part II. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
63.
R. Pizzoferrato L. Lagonigro T. Ziller A. Di Carlo R. Paolesse F. Mandoj A. Ricci C. Lo Sterzo 《Chemical physics》2004,300(1-3):217-225
We study the infrared emission at 1.54 μm of an organolanthanide complex, Er(III)-tetraphenylporphyrin [Er(TPP)acac], both as a result of direct optical excitation and via energy transfer from host π-conjugate polymers of type poly(arylene–ethynylene) [PAE]. In the first case, the emission of the neat complex is characterized in inert transparent materials and a value of the quantum yield at 1.54 μm φIR=4×10−4 is measured. Then, fluorescence resonance transfer is investigated in blends of Er(TPP)acac with PAEs by monitoring the quenching of the polymer fluorescence along with the enhancement of both the visible emission of the ligand and the near-infrared band of Er3+. These different procedures allow a detailed analysis of the transfer efficiency within a specific implementation of the Förster model for polymeric donors. The experimental values of the critical radius R0, ranging from 1.3 to 2.5 nm for the different blends, are in good agreement with theory for a wide interval of the physical and spectroscopic parameters. This suggests that other mechanisms for excitation transfer do not play a significant role in these materials. 相似文献
64.
Robert Cravotta 《电子设计技术》2006,13(9):80-80,82-84,86
新的特性必须更加智能,在增加价值的同时不会分散驾驶者的注意力和增加事故的风险。 相似文献
65.
Robert Muencke 《Fresenius' Journal of Analytical Chemistry》1885,24(1):242
Ohne Zusammenfassung 相似文献
66.
E. M. Zobov M. E. Zobov F. S. Gabibov I. K. Kamilov F. I. Manyakhin E. K. Naimi 《Semiconductors》2008,42(3):277-280
The results of the effect of ultrasonic treatment of ZnSe crystals on the structure of the energy spectrum of electronic states of centers with deep levels forming photoelectric and luminescent properties of this compound are presented. It is for the first time proved experimentally that the climb of edge dislocations under the effect of ultrasound leads to regrouping and generation of defects forming deep levels, which manifest themselves in phenomena of photosensitivity and radiative recombination. 相似文献
67.
Sebastián López Gustavo M. Callicó Félix Tobajas Valentín de Armas José F. López Roberto Sarmiento 《ETRI Journal》2008,30(6):862-864
This letter presents a novel approach for organizing computational resources into groups within H.264/AVC motion estimation architectures, leading to reductions of up to 75% in the equivalent gate count with respect to state‐of‐the‐art designs. 相似文献
68.
H.J. Bolink E. Coronado D. Repetto M. Sessolo E.M. Barea J. Bisquert G. Garcia‐Belmonte J. Prochazka L. Kavan 《Advanced functional materials》2008,18(1):145-150
A new type of bottom‐emission electroluminescent device is described in which a metal oxide is used as the electron‐injecting contact. The preparation of such a device is simple. It consists of the deposition of a thin layer of a metal oxide on top of an indium tin oxide covered glass substrate, followed by the solution processing of the light‐emitting layer and subsequently the deposition of a high‐workfunction (air‐stable) metal anode. This architecture allows for a low‐cost electroluminescent device because no rigorous encapsulation is required. Electroluminescence with a high brightness reaching 5700 cd m–2 is observed at voltages as low as 8 V, demonstrating the potential of this new approach to organic light‐emitting diode (OLED) devices. Unfortunately the device efficiency is rather low because of the high current density flowing through the device. We show that the device only operates after the insertion of an additional hole‐injection layer in between the light‐emitting polymer (LEP) and the metal anode. A simple model that explains the experimental results and provides avenues for further optimization of these devices is described. It is based on the idea that the barrier for electron injection is lowered by the formation of a space–charge field over the metal‐oxide–LEP interface due to the build up of holes in the LEP layer close to this interface. 相似文献
69.
R. Hefelmann P. Mann A. Aignan F. Filsinger und H. Amsel 《Fresenius' Journal of Analytical Chemistry》1902,41(1):66-68
Ohne Zusammenfassung 相似文献
70.
Xin Sun Qiang Lu Moroz V. Takeuchi H. Gebara G. Wetzel J. Shuji Ikeda Changhwan Shin Tsu-Jae King Liu 《Electron Device Letters, IEEE》2008,29(5):491-493
A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control). 相似文献