A theoretical study of light emission from nanoscale silicon

In comparing our calculated exciton energies with those obtained from pseudopotential calculations (Ref. 27) and from a previous tight binding calculation (Ref. 30), we stated that the differences between the three semi-empirical calculations arise because of different treatment of the nanocrystal surfaces. This appears not to be correct. Subsequent calculations with variable Si-H parameters have shown that the band gap is actually rather insensitive to the actual value of these. Instead, the important feature appears to be the overall quality of the bulk band structure parameterization. References 27 and 30 use more extensive and higher quality empirical parameterizations for bulk Si than the sp³s∗ model used by us. Repeating our time dependent calculations with an improved sp³d⁵ parameterization results in similar values to those of Refs. 27 and 30 for the exciton energies.¹ The agreement of the sp³s∗ values with experimental photoluminescence energies (Fig. 7) cannot, therefore, be regarded as well understood at this time.^1,2     

Toward two-dimensional self-organization of nanostructures using wafer bonding and nanopatterned silicon surfaces

The structure of ultrathin silicon layers obtained by molecular hydrophobic bonding is investigated. The twist and tilt angles between the two crystals are accurately controlled. The buried Si|Si interface is observed by transmission electron microscopy and by grazing incidence X-ray techniques. For low twist angle values (/spl psi/<5/spl deg/) plane view observations reveal well-defined dislocation networks. Cross-section observations give evidence that the dislocation networks are localized at the bonding interfacial plane with no threading dislocation. Grazing incidence small angle X-ray scattering measurements confirm the good quality of the bonding interface as well as the quality of the dislocation networks. Grazing incidence X-ray diffraction is also used and shows the long-range order of the periodic strain field in the silicon layer. It shows, especially, the interaction between the dislocations. X-ray reflectivity was employed and estimated that the interfacial thickness (i.e., thickness of the bonding) lower than 1 nm decreases when the twist angle increases. The nanopatterned surface is then investigated by scanning tunneling microscopy and X-ray methods. To validate these substrates for long-range order self-organization, the growth of Si and Ge quantum dots is finally achieved.     

An EKV-based high voltage MOSFET model with improved mobility and drift model

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270–3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] especially in the quasi-saturation region of output characteristics.     

Stable hysteretic reflection of light at a nonlinear interface

We have observed a hysteretic (bistable) reflection of a Gaussian laser beam at the interface between glass and a liquid solution of polystyrene microspheres as nonlinear medium with both branches of the hysteretic curve being stable, in contrast to the results of previous experiments.     

Partial regularity for minimisers of certain functionals having nonquadratic growth

We prove partial regularity results for local minimisers of

Modeling of submicrometer gate GaAs field effect transistors

Before describing the mainFet modelings today available, the main technological evolutions ofMesfet andTegfet are summarized. It is brought some information on the various physical effects that occur in the devices and that must be taken into account in the models. It is shown that the different kinds of modelings (Monte Carlo, two dimensional, one dimensional) constitute a continuous chain, where the different elements appear strictly complementary. Finally, the present situation concerning modeling ofMesfet andTegfet will be presented.     

How electrons guard the space: shape optimization with probability distribution criteria

Efficient formulas for computing the probabilities of finding exactly electrons in an arbitrarily chosen volume ³ for Hartree–Fock wavefunctions are presented. These formulas allow the use of shape optimization techniques, such as level set methods, for optimizing with respect to various criteria involving such probabilities. The criterion defined as the difference between the Hartree–Fock and the independent-particle model probabilities of finding electrons in stresses the quantum effects due to the Pauli principle. We have implemented a 2D level set method for optimizing this criterion in order to study spatial separation of electron pairs in linear molecules. The method is described and the illustrative example of the BH molecule is reported.Contribution to the Jacopo Tomasi Honorary Issue     

Selective infrared photodissociation of protonated para-fluorophenol isomers: substitution effects in oxonium and fluoronium ions

Isomer-selective infrared photodissociation (IRPD) spectra are obtained for the first time for protonated polyfunctional aromatic molecules isolated in the gas phase. IRPD spectra of the oxonium and fluoronium isomers of protonated para-fluorophenol (C6H6FO+) were separately obtained by monitoring resonant photo-induced H2O and HF loss, respectively. Analysis of the F-H, O-H, and C-H stretch wave numbers provides valuable spectroscopic information on the chemical properties of these reactive intermediates, in particular on the substitution effects of functional groups.     

Static micromixers based on large-scale industrial mixer geometry

Mixing liquids at the micro-scale is difficult because the low Reynolds numbers in microchannels and in microreactors prohibit the use of conventional mixing techniques based on mechanical actuators and induce turbulence. Static mixers can be used to solve this mixing problem. This paper presents micromixers with geometries very close to conventional large-scale static mixers used in the chemical and food-processing industry. Two kinds of geometries have been studied. The first type is composed of a series of stationary rigid elements that form intersecting channels to split, rearrange and combine component streams. The second type is composed of a series of short helix elements arranged in pairs, each pair comprised of a right-handed and left-handed element arranged alternately in a pipe. Micromixers of both types have been designed by CAD and manufactured with the integral microstereolithography process, a new microfabrication technique that allows the manufacturing of complex three-dimensional objects in polymers. The realized mixers have been tested experimentally. Numerical simulations of these micromixers using the computational fluid dynamics (CFD) program FLUENT are used to evaluate the mixing efficiency. With a low pressure drop and good mixing efficiency these truly three-dimensional micromixers can be used for mixing of reactants or liquids containing cells in many microTAS applications.