类型γ射线能谱指纹的识别机理

放射源的辐射指纹能起到标识和鉴别放射性物体的作用.在涉及核弹头不可逆销毁过程的深度核裁军核查中,核弹头的辐射指纹对标识和鉴别裁减下来的核弹头将起到关键作用.预先研究辐射指纹的有关技术,如识别机理的研究,将有助于深度核裁军的核弹头核查技术发展.以实验室放射源为研究对象,探索了类型γ射线能谱指纹的同一性识别机理.类型γ射线指纹识别机理的研究,就是要找出一种合适的方法,以较高的置信度,描述两个正在进行比较的γ射线指纹是否为同一放射源的指纹.采用了谱形比较法,并用谱相似度概念来描述两个指纹的相似程度.在谱形比较思想的指导下,编制了放射源类型指纹识别软件,并通过放射源同一性的识别实验验证了软件的有效性,同时研究了谱相似度随统计涨落和测量条件,如时间、源强和本底等因素的变化情况.研究结果表明:1)用相似度概念来描述两个指纹的相似程度,回答两个待比较的γ射线能谱是否代表同一类型放射源,是切实可行的;2)该识别机理只具备识别放射源类型的能力,而对同一类型、差异甚微的放射源个体还不能识别 关键词： γ射线能谱指纹 辐射指纹 识别机理 核查技术     

Fully-angular polyhex chains with minimal total π-electron energy

By Hückel molecular orbital (HMO) theory, the calculation of the total energy of all π-electrons in conjugated hydrocarbons can be reduced to that of E(G)=|λ₁|+|λ₂|+?+|λn|, where λi are the eigenvalues of the corresponding graph G. Denote by Ψn the set of all fully-angular polyhex chains with n hexagons. In this paper, we show that Hn has the minimum total π-electron energy among chains in Ψn, where Hn is the helicene chain.     

TEMIC射频卡的速率自适应读卡算法

提出种基于TEMIC射频卡Manchester编码的速率自适应读卡算法,并对该算法进行了说明和示例。     

流动注射-ICP光谱分析中的基体效应和酸效应研究

本文讨论了流动注射-ICP光谱分析中的基体效应和酸效应。当基体(Na、Ca、Fe、Zn)的浓度大于5mg/ml时,待测元素的谱线强度表现出不同程度的降低;上述基体的引入对激发温度和电子密度的影响不明显;基体产生的抑制效应可能与改变了待测元素粒子的激发几率的因素有关;于载流体中加入一定量的基体元素,是消除或降低基体效应的有效方法。酸(HCl、HNO_3、H_2SO_4)对待测元素表现出不同程度的抑制效应,其主要原因是物理干扰所致。     

Electrical passivation in hydrogen plasma exposed GaN

Lightly p-doped (3×10¹⁷ cm^-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250°C. Subsequent annealing to 350°C produces further dopant passivation, while higher temperatures (450°C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides     

A molecular network model to describe the nonlinear viscoelastic behavior of polymers

A transient molecular network model is built to describe the nonlinear viscoelasticity of polymers by considering the effect of entanglement loss and regeneration on the relaxation of molecular strands. It is an extension of previous network theories. The experimental data on three thermoplastic polymers (ABS, PVC and PA6) obtained under various loading conditions are used to test the model. Agreement between the theoretical and experimental curves shows that the suggested model can describe successfully the relaxation behavior of the thermoplastic polymers under different loading rates by using relatively few relaxation modes. Thus the micromechanism responsible for strain-rate dependence of relaxation process and the origin of nonlinear viscoelasticity may be disclosed. The project supported by the National Natural Science Foundation of China and Doctorial Fund     

高密度封装CAD技术研究

介绍了自行研制的高密度封装外壳设计软件、阐述了其工作原理和功能。应用该软件设计并制作出目前国内最多针脚数的外壳ＰＧＡ２５７。     

Effect of ion energy on hydrogen diffusion in n- and p-GaAs

The ion energy during electron cyclotron resonance (ECR) plasma hydrogenation is found to have a strong effect on both the effective diffusivity and solubility of hydrogen in n⁺ and p⁺ GaAs. For fixed plasma exposure conditions (30 min, 250°C) the diffusion depths for -150 V acceleration voltage are ~50 and ~100% larger, respectively, in p⁺- and n⁺-GaAs compared to 0 V acceleration voltage. The smaller incorporation depths at lower ion energy coincide with much larger peak hydrogen concentrations and higher apparent thermal stability of passivated dopants     

动态全息图快速引入背景条纹技术

音叉振动镜快速引入背景条纹的动态全息图两次曝光法，适用于一次泵浦的双脉冲全息干涉计量术．其背景条纹的密度和方向具有可调性和重复性．     

w-DENSITY AND w-BALANCED PROPERTY OF WEIGHTED GRAPHS

§ 1　IntroductionAll graphsconsidered in this paperare finite undirected ones withoutloops ormultipleedges.Our terminology and notation are standard exceptas indicated.A good reference forany undefined terms is[1 ] .Let G be a graph with vertex set V( G) and edge set E( G) .The density of G is definedbyd( G) =ε( G)ν( G) ,whereν( G) andε( G) denote| V( G) | and| E( G) | ,respectively.G is said to be balanced iffor each subgraph H of G we have d( H )≤ d( G) ,where V( H ) is assum…