Study of photon-induced L3 vacancy alignment for elements La to U

Alignment of photon-induced L₃ vacancies is studied in rare earth and highZ elements at energies of experimental interest, near thresholds to 60 keV, under nonrelativistic dipole approximation. Numerical calculations of the matrix element are undertaken to produce theoretical data for comparison with the experimental findings. The A₂ values being s>0.1 at photoelectron energies <20 keV are certainly higher than 5–8% uncertainties quoted in experimental results. Present findings are from a very basic model, hydrogen-like and can further be treated as reference to observe the impact of screening, relativistic, multipole and retardation corrections to the model     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

Analysis of posterior availability distributions of series and parallel systems

The lifetime distribution of an engineering system is a powerful tool for analysing the system in respect of its reliability characteristics. The analysis can be improved if the experimenter has, and is able to combine, the prior belief about the system with the operational or experimental data. Moreover, in many situations, the operational data with the complete system may either be costlier or non-existent. The problem can still be tackled by making use of such information available on the subunits or components of the system. Pursuing these concepts, the present study deals with the analysis of posterior availability distributions for a series and a parallel system. Time truncated failure and repair information and prior beliefs about the failure and repair rates of the compoents of the systems have been employed in the analysis.     

Study of the effect of swift heavy Ni ion irradiation on ruby single crystal by using the XANES and EXAFS techniques

We have made the XAFS measurements at the Cr–K-edge on natural Indian ruby single crystals (corundum) and its two irradiated samples with fluence 1×10¹² Ni⁶⁺ and 5×10¹² Ni⁶⁺ ions/cm². Irradiated samples show interesting changes in their physical appearance. XANES measurements show progressive decrease in Δ_oct value on increase of Ni fluence in irradiated samples. EXAFS measurements on these samples show decrease in Cr–O distance on increase of Ni fluence. Lowering of Δ_oct value is correlated with the increase of Cr–O distance.     

Temperature studies of Fe−Mn nodules

Sea nodules were extensively studied over a wide range of temperature ranging from 77K to 1175K using Mossbauer effect and ESR. The Mossbauer studies of the nodules at 77K and room temperature show a quadrupole doublet whereas at higher temperatures magnetic spectra were obtained starting at around 875K which ultimately gives a hyperfine field of around 390 KOe at 1175 K. The Mossbauer spectra recorded at 30K did not show any significant change in the room temperature spectra. The analysis of the spectra upto 775K showed two positions of Fe^R+, vie., octahedral and tetrahedral which were varified by ESR of the diluted samples.     

Skew-commuting and Commuting Mappings in Rings with Left Identity

Our main object in this paper is to discuss some results on rings with left identity in which certain subsets satisfy some functional identities.     

A Light‐Blue Phosphorescent Dendrimer for Efficient Solution‐Processed Light‐Emitting Diodes

We describe the preparation of a dendrimer that is solution‐processible and contains 2‐ethylhexyloxy surface groups, biphenyl‐based dendrons, and a fac‐tris[2‐(2,4‐difluorophenyl)pyridyl]iridium(III ) core. The homoleptic complex is highly luminescent and the color of emission is similar to the heteroleptic iridium(III ) complex, bis[2‐(2,4‐difluorophenyl)pyridyl]picolinate iridium(III ) (FIrpic). To avoid the change in emission color that would arise from attaching a conjugated dendron to the ligand, the conjugation between the dendron and the ligand is decoupled by separating them with an ethane linkage. Bilayer devices containing a light‐emitting layer comprised of a 30 wt.‐% blend of the dendrimer in 1,3‐bis(N‐carbazolyl)benzene (mCP) and a 1,3,5‐tris(2‐N‐phenylbenzimidazolyl)benzene electron‐transport layer have external quantum and power efficiencies, respectively, of 10.4 % and 11 lm W^–1 at 100 cd m^–2 and 6.4 V. These efficiencies are higher than those reported for more complex device structures prepared via evaporation that contain FIrpic blended with mCP as the emitting layer, showing the advantage of using a dendritic structure to control processing and intermolecular interactions. The external quantum efficiency of 10.4 % corresponds to the maximum achievable efficiency based on the photoluminescence quantum yield of the emissive film and the standard out‐coupling of light from the device.