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851.
852.
853.
C.J. Lu H.M. Shen S.B. Ren Y.N. Wang 《Applied Physics A: Materials Science & Processing》1997,65(4-5):395-401
3 thin films is systematically studied by using X-ray diffraction (XRD). The PbTiO3 thin films with different average grain sizes were prepared on various substrates by a sol-gel process. The films on NaCl
and fused glass are randomly grain-oriented, while those on (111)Pt/Ti/SiO2/Si are highly {100} cubic index grain-oriented . It is found from the XRD patterns of the films on NaCl that with decreasing
average grain size from 230 to 80 nm, the intensities of high h index (h>l) peaks (hkl), such as (100), (110), (200), (201),
(210), (211), etc., decrease rapidly and ultimately disappear, whereas another set of peaks (lkh), including (001), (002),
(102), (112), etc., are still intense. This interesting result suggests that at grain size below a certain critical size an
increasing number of grains no longer show 90°-domains, which is confirmed by TEM observations. Meanwhile, X-ray evidence
of such a grain-size-related absence of 90°-domains is also found for PbTiO3 films on Pt(111) and fused-glass substrates. The volume fractions of single-domain grains (without 90°-domains) in the films
are estimated from their XRD patterns. By combining SEM and TEM investigations, the critical grain size for the formation
of 90°-domains is further determined to be near 200 nm.
Received: 19 December 1996/Accepted: 24 March 1997 相似文献
854.
855.
S. V. Bulyarskii N. A. Butylkina N. S. Grushko A. E. Luk'yanov M. V. Nazarov I. O. Stepin 《Russian Physics Journal》1991,34(4):339-342
Latent macroscopic defects in silicon are detected by electrical and electron microscope measurements. They lead to anomalous temperature dependence of the Fermi level position and growth in the hole capture coefficient. A level with energy of 0.55 eV measured from the conduction zone controls the recombination process. It is proposed that macroscopic defects develop upon association of oxygen-silicon vacancy complexes. Action of an electron beam leads to reversible changes which increase upon multiple scanning, affecting the value of the diffusion length.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 71–75, April, 1991. 相似文献
856.
Chao C.-J. Wong S.-C. Chen M.-J. Liew B.-K. 《Semiconductor Manufacturing, IEEE Transactions on》1998,11(4):615-623
Interconnect parasitic parameters in integrated circuits have significant impact on circuit speed. An accurate monitoring of these parameters can help to improve interconnect performance during process development, provide information for circuit design, or give useful reference for circuit failure analysis. Existing extraction methods either are destructive (such as SEM measurement) or can determine only partial parasitic parameters (such as large capacitor measurement). In this paper, we present a new method for extracting interconnect parasitic parameters, which can simultaneously determine the interlayer and intralayer capacitances, line resistance, and effective line width. The method is based on two test patterns of the same structure with different dimensions. The structure consumes less wafer area than existing methods. The method shows good agreement with SEM measurement of dielectric thickness in both nonglobal planarized and chemical-mechanical polished processes, and gives accurate prediction of the process spread of a ring oscillator speed over a wafer 相似文献
857.
Yu. I. Golovin R. B. Morgunov M. B. Badylevich S. Z. Shmurak 《Physics of the Solid State》1997,39(8):1232-1234
Observations indicate that illuminating NaCl crystals by ultraviolet light (λ=350 nm) suppresses the magnetoplastic effect. The processes induced by illumination take place in a subsystem of point defects
and are related to a change in the state of magnetically sensitive dislocation pinning sites.
Fiz. Tverd. Tela (St. Petersburg) 39, 1389–1391 (1996) 相似文献
858.
van Wesenbeeck M.P.N. Klaasens J.B. von Stockhausen U. Munoz de Morales Anciola A. Valtchev S.S. 《Industrial Electronics, IEEE Transactions on》1997,44(6):780-787
Series connection of power devices has evolved into a mature technique and is widely applied in HV DC power systems. Static and dynamic voltage balance is ensured by shunting individual devices with dissipative snubbers. The snubber losses become pronounced for increased operating frequencies and adversely affect power density. Capacitive snubbers do not exhibit these disadvantages, but they require a zero-voltage switching mode. Super-resonant power converters facilitate the principle of zero-voltage switching. A high-voltage DC-DC power converter with multiple series-connected devices is proposed. It allows the application of nondissipating snubbers to assist the voltage sharing between the multiple series-connected devices and lowers turnoff losses. Simulation results obtained with a circuit simulator are validated in an experimental power converter operating with two series-connected devices. The behavior of the series connection is examined for MOSFETs and IGBTs by both experimental work with a 2 kW prototype and computer simulation. Applications can be found in traction and heavy industry, where the soft-switching power converter is directly powered from a high-voltage source 相似文献
859.
J. Feldhaus E. L. Saldin J. R. Schneider E. A. Schneidmiller M. V. Yurkov 《Optics Communications》1997,140(4-6):341-352
A new design for a single pass X-ray Self-Amplified Spontaneous Emission (SASE) FEL is proposed. The scheme consists of two undulators and an X-ray monochromator located between them. The first stage of the FEL amplifier operates in the SASE linear regime. After the exit of the first undulator the electron bunch is guided through a non-isochronous bypass and the X-ray beam enters the monochromator. The main function of the bypass is to suppress the modulation of the electron beam induced in the first undulator. This is possible because of the finite value of the natural energy spread in the beam. At the entrance to the second undulator the radiation power from the monochromator dominates significantly over the shot noise and the residual electron bunching. As a result the second stage of the FEL amplifier operates in the steady-state regime when the input signal bandwidth is small with respect to that of the FEL amplifier. Integral losses of the radiation power in the monochromator are relatively small because grazing incidence optics can be used. The proposed scheme is illustrated for the example of the 6 nm option SASE FEL at the TESLA Test Facility under construction at DESY. As shown in this paper the spectral bandwidth of such a two-stage SASE FEL (Δλ/λ 5 × 10−5) is close to the limit defined by the finite duration of the radiation pulse. The average brilliance is equal to 7 × 1024 photons/(s × mrad2 × mm2 × 0.1% bandw.) which is by two orders of magnitude higher than the value which could be reached by the conventional SASE FEL. The monochromatization of the radiation is performed at a low level of radiation power (about 500 times less than the saturation level) which allows one to use conventional X-ray optical elements (grazing incidence grating and mirrors) for the monochromator design. 相似文献
860.
S. M. Kelly 《Liquid crystals》1991,10(2):273-287
Three separate series of new materials of weak to strongly positive dielectric anisotropy have been prepared. Each series contains four sub-sets of materials each incorporating a different four unit linking group (i.e., C4H8, C4H6, C3H6O and C3H4O) and the same series of end groups (i.e. F, CN and OCF3) in various substitution patterns. The synthesis and liquid crystal transition temperatures of these novel substances are described and compared with those of the corresponding materials incorporating standard central linkages (i.e.-, C2H4, CH2O, COO). The effect of an additional trans carbon-carbon double bond in the terminal alkyl chain and in the central linking unit has also been studied. 相似文献