通过直接栅电流测量研究PMOSFET's热载流子损伤

通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET's热载流子损伤的生长规律.由此,给出了热载流子引起PMOSFET's器件参数退化的准确物理解释.并证明了直接栅电流测量是一种很好的研究器件损伤生长和器件参数退化的实验方法.     

双全纯映照的一些偏微分不等式

该文在有界星形圆型域上建立一些与双全纯星形映照有关的偏微分不等式．作为应用，给出有界星形圆型域上ε星形映照以及近似星形映照的一些充分判别条件．     

npn AlGaN/GaN HBT模型与特性分析

基于实验数据对GaN材料的少子寿命和碰撞电离率进行了建模,应用漂移-扩散传输模型开展了npnAlGaN/GaN异质结双极晶体管的特性研究,给出了器件导通电压、偏移电压和饱和电压的解析式.结果表明:实际器件导通电压、偏移电压及饱和电压较大的原因主要是高基区电阻和基区接触的非欧姆特性,为器件的工艺制造提供了理论指导.     

Development of a low cost microwave mixer using a broad-band substrate integrated waveguide (SIW) coupler

A low cost single-balanced mixer is designed using a newly designed 90/spl deg/ substrate integrated waveguide (SIW) 3-dB coupler, which takes the advantages of low cost, low profile, and high performance. An X-band single-balanced SIW mixer is designed and fabricated with a standard printed circuit board process. Measured conversion loss of 6.8dB and the wide-band response from 8.5 to 12GHz are presented.     

MCM用氮化铝共烧多层陶瓷基板的研究

通过实验优化AlN(氮化铝)瓷料配方及排胶工艺,对共烧W(钨)导体浆料性能及AlN多层基板的高温共烧工艺进行了研究,并对AlN多层基板的界面进行了扫描电镜分析。采用AlN流延生瓷片与W高温共烧的方法,成功地制备出了高热导率的AlN多层陶瓷基板,其热导率为190 W/(m·K),线膨胀系数为4.6106℃1(RT~400℃),布线层数9层,W导体方阻为9.8 m,翘曲度为0.01 mm/50 mm,完全满足高功率MCM的使用要求。     

1.8V电源电压81dB动态范围的低过采样率ΣΔ调制器

采用2 2 2级联全差分结构和低电压、高线性度的电路设计实现了高动态范围、低过采样率的ΣΔ调制器.在1.8V工作电压,4 MHz采样频率以及80 k Hz输入信号的条件下,该调制器能够达到81d B的动态范围,功耗仅为5 m W.结果表明此结构及电路设计可以用于在低电压工作环境的高精度模数转换中     

Design, modeling, and hardware correlation of a 3.2Gb/s/pair memory channel

With the rapid advance of silicon process technology, it is now possible to design input/output (I/O) circuits that operate at multigigabit data rates. As a result, accurate modeling and analysis of high-speed interconnect systems is essential to optimize the performance of the overall system. This paper describes the interconnect design, modeling, simulation, and characterization methodologies that are essential to achieve multigigabit data rates. It focuses on the physical layer verification and hardware correlation of functional systems and silicon to ensure robust system operation over 3.2Gb/s data rate using conventional low-cost packaging and printed circuit board (PCB) technologies. In order to capture conductor and dielectric losses, as well as other high-frequency effects of three-dimensional structures, accurate measurement-based simulation techniques that directly incorporate frequency-domain parameters from measurement or electromagnetic solver parameters into circuit simulation tools using fast Fourier transform (FFT) and bandlimiting windowing techniques are developed. Finally, simulation waveforms are correlated with prototypes at both component and system levels in both time and frequency domains.     

宽带智能天线系统中的频率补偿技术

在无线通信中,智能天线系统在抑制窄带多径干扰方面具有得天独厚的优势,但是用于宽带无线通信系统中时,就需要采用频率补偿方法.重点介绍基于频谱分解、聚焦和插值算法的补偿技术,并对这3种频率补偿技术的性能进行比较,结果表明在应用补偿技术的系统中,系统性能有显著的改善,其中插值算法具有最优的性能.     

Impedance boundary conditions in a hybrid FEM/MOM formulation

When numerically modeling structures with imperfect conductors or conductors coated with a dielectric material, impedance boundary conditions (IBCs) can substantially reduce the amount of computation required. This paper incorporates the IBC in the finite-element method (FEM) part of a FEM/method of moments (FEM/MoM) modeling code. Properties of the new formulation are investigated and the formulation is used to model three practical electromagnetic problems. Results are compared to either measured data or other numerical results. The effect of the IBC on the condition number of hybrid FEM/MoM matrices is also discussed.     

共同治理结构下企业所有权配置的进化博弈分析

本文运用进化博弈论的方法,对有限理性的利益相关者在共同治理结构下参与企业所有权配置并达到纳什均衡的进化博弈过程进行分析,并通过算例说明了这是一个各方相互沟通和反复博弈的动态过程,逐步实现一致性的企业所有权配置的纳什均衡.