Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.     

A new predictive search area approach for fast block motion estimation

According to the observation on the distribution of motion differentials among the motion vector of any block and those of its four neighboring blocks from six real video sequences, this paper presents a new predictive search area approach for fast block motion estimation. Employing our proposed simple predictive search area approach into the full search (FS) algorithm, our improved FS algorithm leads to 93.83% average execution-time improvement ratio, but only has a small estimation accuracy degradation. We also investigate the advantages of computation and estimation accuracy of our improved FS algorithm when compared to the edge-based search algorithm of Chan and Siu (see IEEE Trans. Image Processing, vol.10, p.1223-1238, Aug. 2001); experimental results reveal that our improved FS algorithm has 74.33% average execution-time improvement ratio and has a higher estimation accuracy. Finally, we further compare the performance among our improved FS algorithm, the three-step search algorithm, and the block-based gradient descent search algorithm.     

A new MMIC broadside coupler using an array of air-bridges for directivity enhancement

A new quadrature broadside coupler is proposed, which employs an array of air-bridges to enhance directivity via its phase-equalization effect on the c-mode and /spl pi/-modes. The realization of air-bridges follows a standard MMIC fabrication process. An experimental chip fabricated on the 75-/spl mu/m GaAs substrate verifies the air-bridge effect and shows wideband characteristics of the coupling of 3.2/spl plusmn/0.4 dB, the insertion loss of 3.9/spl plusmn/0.4 dB, the output phase deviation from quadrature less than 6/spl deg/, and the isolation greater than 18 dB from 20 to 40 GHz.     

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Process technology of high-speed implant-apertured index-guide lateral-current-injection top dielectric-mirror quantum-well 850-nm vertical cavity surface-emitting lasers (VCSELs) has been developed. Oxygen and helium implantation for aperture definition and extrinsic capacitance reduction, dielectric mirror formation, p- and n-ohmic contact formation, VCSEL resistance, and thermal analysis were investigated. Employing this technology, GaAs/AlGaAs-based 850-nm VCSELs with small signal modulation bandwidths up to 11.5 Gb/s and an eye diagram generated at 12 Gb/s by a pseudorandom bit sequence of 2/sup 31/-1 were achieved. The bit-error rates were below 10/sup -13/. The threshold current is as low as 0.8 mA for 7-/spl mu/m-diameter current apertures and typical slope efficiencies of 0.45-0.5 mA/mW were obtained.     

Computer-aided analysis of free-running microwave oscillators

The authors present a newly developed free-running steady-state oscillator analysis algorithm suited to large-signal oscillator analysis. Kurokawa's oscillation condition is coupled with the modified nodal admittance form of the circuit equations to avoid degenerate solutions. The algorithm was implemented by using both harmonic balance and frequency-domain spectral balance techniques. It was used in the simulation of monolithically integrated varactor-tuned MESFET oscillator. Good agreement between simulated power and oscillation frequency results was obtained     

End-correction network of a coaxial probe for microstrip patchantennas

A simple end-correction network for the constant current probe model of probe-fed microstrip patch antennas is derived. The parameters of the network are solved asymptotically and verified by the numerical solution of the integral equation formulation. Based on the analysis of a problem concerning a coaxial-fed microstrip patch, it is concluded that: (1) TEM (transverse electromagnetic) aperture field approximation can provide an accurate result to the input admittance, and there is no need to introduce a specific correction network for most applications; and (2) Constant current probe is valid only when both k₁ h≪1 and a/h≪1 are satisfied. An end-correction network consists of a series inductance and a shunt capacitance should be used in other ranges or for higher accuracy     

PARASITIC TOLERANT DIFFERENTIAL SC TRANSCONDUCTANCE USING UNITY GAIN BUFFERS

The unity gain buffer will be good to design high frequency SCF if its resistiveeffects can be eliminated,and therefore the whole parasitic sensitivities will greatly be reduced.On the basis of this concept,a novel parasitic tolerant SC DTE(differential transconductanceelement)is proposed.SC floating inductor and integrator fit for high frequency applications areformed by the DTE.The computer simulation and experiment on a third order elliptic LP filterverify its validity.     

共面转换液晶显示器中获得对比度高于1:600的新技术

薄膜晶体管液晶电视(TFT-LCD TV)因为具有薄、轻、紧凑和可随意放置的特点，已经占据了大部分电视机市场。除了这些物理特性以外，最重要的特性是已具有了良好像质的对比度。为了将对比度提高到1：600以上，对偏振片膜、背光源板、滤色片树脂、电极锥角和摩擦条件等都进行了研究。优化的背光板组合，光滑的电极锥角和摩擦方法的控制是提高对比度的主要控制因素。应用新开发的滤色片树脂，对获得高对比度最为有效。     

Can Robots Manifest Personality?: An Empirical Test of Personality Recognition,Social Responses,and Social Presence in Human–Robot Interaction

Personality is an essential feature for creating socially interactive robots. Studies on this dimension will facilitate enhanced human–robot interaction (HRI). Using AIBO, a social robotic pet developed by Sony, we examined the issue of personality in HRI. In this gender-balanced 2 (AIBO personality: introvert vs. extrovert) by 2 (participant personality: introvert vs. extrovert) between-subject experiment (N = 48), we found that participants could accurately recognize a robot's personality based on its verbal and nonverbal behaviors. In addition, various complementarity attraction effects were found in HRI. Participants enjoyed interacting with a robot more when the robot's personality was complementary to their own personalities than when the robot's personality was similar to their own personalities. The same complementarity attraction effect was found in participants' evaluation of the robot's intelligence and social attraction. Participants' feelings of social presence during the interaction were a significant mediator for the complementarity attraction effects observed. Practical and theoretical implications of the current study for the design of social robots and the study of HRI were discussed.     

Kinetics of AuSn4 migration in lead-free solders

The relatively fast diffusion of Au atoms in eutectic PbSn matrix is considered one of the contributing factors to the Au embrittlement problem. In this study, we further investigated the Au embrittlement problem in high-Sn solders. Experimentally, Sn3.5Ag (wt.%) spheres with 500-μm diameter were soldered over the Au/Ni soldering pads. It was found that some of the AuSn₄ needles that formed after reflow inside the solder migrated back to the solder/pad interface during thermal aging. However, the migration kinetics in high-Sn solders was slower compared to that in eutectic PbSn. The difference in migration kinetics of AuSn₄ in eutectic PbSn and SnAg was ascribed to the difference in the magnitudes of the Au flux and the Ni flux. In eutectic PbSn, the Au flux was much greater than that of the Ni flux, and the Au and Ni flux were in the same order of magnitude in eutectic SnAg. The relative magnitude of the Au and Ni flux changed in eutectic PbSn and SnAg because the homologous temperatures of PbSn and SnAg were different.