因特网防御DoS攻击技术评述Ⅰ--攻击分类与特征·包过滤·攻击检测与防御

概述了因特网上DoS攻击的相应分类及基本特征，评述了包过滤、攻击检测及防御技术的最新成果．前一部分介绍了入口过滤、基于路由的过滤网和有效源地址强制协议．后一方面主要讨论了适合于检测攻击包的技术，介绍了新近提出的频谱分析方法和泛滥检测系统．简要评述了已有的防御SYN泛滥攻击的技术措施，介绍了Cisco的TCP拦截技术，提出了改进策略．     

Generation of large fifth-order nonlinear phase shifts by use of lossless χ(2) cascaded nonlinear processes

It is shown that the cascaded fifth-order nonlinear phase shifts will increase with energy loss in the cascaded processes. Essentially different from the multi-photon absorption accompanied with inherent material nonlinearities, the loss of fundamental wave in a cascaded process is controllable and suppressible. By introducing difference frequencies generated from the reaction between the fundamental and its second harmonic after the cascaded processes, the fundamental wave can be free of energy loss, while the large cascaded fifth-order nonlinear phase shift is maintained.     

图的边韧性度

文[1]中,定义图G(V,E)的边韧性度定义为min{(|S|+T(G-S))/(ω(G-S)):S?E(G)},这里,T-(G-S)和ω(G-S)分别表示G-S中最大分支的顶点数和连通分支数.这是一个能衡量网络图稳定性较好的参数,因为它不仅考虑到了图G-S的分支数也考虑到了它的阶数.在以前的工作中,作者得到了边韧性度图的一个充要条件.利用这些结果证明了K-树是严格边韧性度图,并找到了边韧性度与较高阶的边坚韧度和边坚韧度之间的关系.     

提高YBCO块材在外磁场中悬浮力

本给出了三种提高YBCO块材在外磁场中悬浮力的方法．第一种方法是增强外磁场，对于此方法，本研究了一块直径为30mm的圆柱状YBCO块材分别在圆柱状NdFeB永磁体和NdFeB永磁导轨上的悬浮力．测量结果表明在77K温度下YBCO块在圆柱状NdFeB永磁体上的最大悬浮力为50N，在NdFeB永磁导轨上的最大悬浮力为103．ON．第二种方法是提高YBCO块材自身的性能，包括临界电流密度、俘获磁通和块材尺寸，对于此方法，本仅研究了块材尺寸对悬浮力的影响．三块直径分别为30mm、35mm、40mm的圆柱状YBC0块材在NdFeB永磁导轨上的悬浮力被测量，77K温度下5mm悬浮间距时的悬浮力分别为103．ON、134．5N、175．ON．第三方法是将YBCO块材变成准永久磁体，此种情况下，直径为40mm的圆柱状YBCO块材在77K温度下5mm悬浮间距时的悬浮力高达218．3N．     

带调和势的超临界非线性Schrdinger方程的最佳门槛

考虑带调和势的超临界非线性Schroedinger方程，解决了该方程整体解和爆破解存在所依赖的初始条件的最佳分界门槛．通过构造两类强制变分问题和建立局部不变半流，运用势井方法和凹方法，获得了该方程在两个不同的空间中的整体解和爆破解的最佳门槛条件．     

浙江发展会展旅游的战略构想

通过对浙江会展旅游现状的分析和研究,总结了浙江会展旅游业的现状与优势,指出了面临的问题,进而从政府与会展企业角度提出了发展浙江会展旅游业的对策.     

A theorem of Grünwald-type for Hermite-Fejér interpolation of higher order

In this paper we give a theorem of Grünwald-type for (0, 1,...,m-1) Hermite-Fejér interpolation (m=2, 4,...), which extends the famous result for a strongly normal system of nodes in the casem=2 given by Grünwald in [1].     

具有一对零态射的Morita Context环(II)

设$(A,B,V,W,\psi,\phi)$是一个Morita Context,具有一对零态射$\psi=0$, $\phi=0$, $C =\left ( \begin{array} {cc}A & V \\W & B \end{array}\right)$是对应的Morita Context环.本文给出了$C$与$A,B,V,W$之间关于环的$\pi$-正则性、semiclean性、Mophic性和环的Exchgange性、Potent性、GM性的关系.     

PINNING EFFECT OF LEAD LANTHANUM TITANATE THIN FILMS DEPOSITED ON DIFFERENT SUBSTRATES

Pinning effect of lead lanthanum titanate (PLT) ferroelectric thin films with excess PbO of 20 mol% has been studied for deposition on diffe rent substrates. Silicon, sapphire and quartz were used as substrates on which P t/Ti or LaNiO₃ thin films were deposited as bottom electrodes. Electron probe analysis results showed that there was still a certain amount of excess Pb in PLT films after annealing at 550 ℃ for 1 h, and the amount of it was dependent on the substrate used. The distribution of excess Pb in the films was investig ated by Auger electron spectroscopy depth profile. It was shown that the substrates and the bottom electrodes had significant effects on the content and distrib ution of excess Pb in PLT films. The excess Pb and its accumulation at the inter face between the film and bottom electrode may act as pinning centers and have a pinning effect on domains, which can be observed by abnormal P-E hysteresis loops and abnormal C-V curves. The excess Pb content in the films and the accumulation of Pb at the interface were high in PLT films deposited on Pt/Ti/S i, and considerable pinning effect was observed. As LaNiO₃ would absorb most part of the excess Pb in PLT films, the content of excess Pb in the films deposited on LaNiO₃/Si was very low and the pinning effect was hardly observed.