Karhunen–Loeve representations of turbulent channel flows using the method of snapshots

For three‐dimensional flows with one inhomogeneous spatial coordinate and two periodic directions, the Karhunen–Loeve procedure is typically formulated as a spatial eigenvalue problem. This is normally referred to as the direct method (DM). Here we derive an equivalent formulation in which the eigenvalue problem is formulated in the temporal coordinate. It is shown that this so‐called method of snapshots (MOS) has some numerical advantages when compared to the DM. In particular, the MOS can be formulated purely as a matrix composed of scalars, thus avoiding the need to construct a matrix of matrices as in the DM. In addition, the MOS avoids the need for so‐called weight functions, which emerge in the DM as a result of the non‐uniform grid typically employed in the inhomogeneous direction. The avoidance of such weight functions, which may exhibit singular behaviour, guarantees satisfaction of the boundary conditions. The MOS is applied to data sets recently obtained from the direct simulation of turbulence in a channel in which viscoelasticity is imparted to the fluid using a Giesekus model. The analysis reveals a steep drop in the dimensionality of the turbulence as viscoelasticity is increased. This is consistent with the results that have been obtained with other viscoelastic models, thus revealing an essential generic feature of polymer‐induced drag reduced turbulent flows. Published in 2006 by John Wiley & Sons, Ltd.     

Comparison of the effects of nonlinear gain and weak opticalfeedback on the dynamics of semiconductor lasers

The influence of nonlinear gain and optical feedback on the dynamics of single-mode semiconductor lasers are numerically investigated based on the Lang and Kobayashi model. It is well known that the nonlinear gain tends to stabilize the dynamics, while the optical feedback tends to increase the instabilities. In this paper, we study the behavior of the attractors when the feedback level k and the gain saturation coefficient ε vary and show that the effects of these parameters are surprisingly opposite. For example, we find that the route to chaos that the external cavity modes follow for increasing k is reversed for increasing ε in an almost identical manner. When the feedback increases the modes follow the usual quasi-periodic route and turn into torus. If k continues to increase, the torus become chaotic attractors as the result of several period-doubling bifurcations or a third Hopf bifurcation. Further increase of k causes the chaotic attractors to lose stability, Contrarily, if the value of the parameter ε is increased, the attractors recover their stability and reverse the route becoming simple torus again. If ε is increased further, the torus reverse the quasi-periodic route and turn into stable modes again. We also find that on the contrary to k, the parameter ε enhances the stability region of an attractor. We show that the feedback level above which a limit cycle emerges from a stable mode, the feedback level above which a torus emerges from a limit cycle, and the feedback level above which a chaotic attractor loses stability are all increasing functions of ε     

Optical imaging of anatomical maps derived from magnetic resonanceimages using time-independent optical sources

Presents a model suitable for computing images of absorption cross sections of thick tissue structures illuminated at near infrared (NIR) wavelengths from tomographic projection data. Image reconstruction is accomplished by solving a system of linear equations derived from transport theory. Reconstruction results using different algebraic solvers are shown for anatomical maps of the breast, derived from magnetic resonance imaging data, containing two simulated pathologies, in which case qualitatively good reconstructions were obtained. Evaluation of magnetic resonance (MR) data to optimize NIR optical tomographic imaging methods and to assess the feasibility of a combined MR-optical measurement scheme is discussed     

Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

Wideband HEMT MMIC low-noise amplifier with temperaturecompensation

A wideband low-noise pseudomorphic HEMT MMIC variable-gain amplifier has been designed and fabricated. The amplifier has a nominal gain of 13 dB across the band 2-20 GHz, with gain flatness better than ±0.4 dB. The noise figure is less than 3 dB across the band 6-16 GHz. An on-chip temperature-sensing diode is used to provide a linear temperature correction which has been used to reduce the gain variation of the amplifier by a factor of 2 across the temperature range -50°C to +95°C     

A prototype 3D optically interconnected neural network

We report the implementation of a prototype three-dimensional (3D) optoelectronic neural network that combines free-space optical interconnects with silicon-VLSI-based optoelectronic circuits. The prototype system consists of a 16-node input, 4-neuron hidden, and a single-neuron output layer, where the denser input-to-hidden-layer connections are optical. The input layer uses PLZT light modulators to generate optical outputs which are distributed over an optoelectronic neural network chip through space-invariant holographic optical interconnects. Optical interconnections provide negligible fan-out delay and allow compact, purely on-chip electronic H-tree type fan-in structure. The small prototype system achieves a measured 8-bit electronic fan-in precision and a calculated maximum speed of 640 million interconnections per second. The system was tested using synaptic weights learned off system and was shown to distinguish any vertical line from any horizontal one in an image of 4×4 pixels. New, more efficient light detector and small-area analog synapse circuits and denser optoelectronic neuron layouts are proposed to scale up the system. A high-speed, feed-forward optoelectronic synapse implementation density of up to 10⁴/cm² seems feasible using new synapse design. A scaling analysis of the system shows that the optically interconnected neural network implementation can provide higher fan-in speed and lower power consumption characteristics than a purely electronic, crossbar-based neural network implementation     

Adiabatic couplers: design rules and optimization

Explicit analytic design rules are derived for both 3 dB and full adiabatic couplers. The design rules are in excellent agreement with numerical calculations using the beam propagation method (BPM). It is shown that the length scaling for 3 dB couplers compared to full couplers makes the former more difficult to design. The design for each case is optimized to obtain the upper limit of performance and a comparison is carried out between two different design geometries for both 3 dB and full adiabatic couplers     

Multi-emitter Si/GexSi1-x heterojunctionbipolar transistor with no base contact and enhanced logic functionality

We demonstrate multi-emitter Si/Ge_xSi_1-x n-p-n heterojunction bipolar transistors (HBT's) which require no base contact for transistor operation. The base current is supplied by the additional emitter contact under reverse bias due to the heavy doping of the emitter-base junction. Large-area HBT test structures exhibit good transistor characteristics, with current gain β≈400 regardless of whether the base current is supplied by a test base electrode or one of the emitter contacts. These devices have enhanced logic functionality because of emitter contact symmetry. Since device fabrication does not require base electrode formation, the number of processing steps can be reduced without significant penalty to HBT performance     

Comparison of mismatch error shaping in multibit oversampledconverters

A number of mismatch error-shaping schemes for oversampled DACs are compared. Simulation results are presented to show that such a comparison should take account of the distribution of the mismatch errors, since the pattern of errors present affects different algorithms in different ways. A scheme for improving the error tolerance of one mismatch shaping architecture is presented