Capacity enhancement of cellular CDMA by traffic-based control ofspeech bit rate

Variable rate speech coding is now recognized as an important system component for high-capacity cellular networks because it exploits speech statistics to reduce the average bit rate, which results in reduced interference and increased capacity. Once a variable rate capability is available, an additional capacity enhancement can be achieved by introducing network control of the user bit rate in response to changing traffic levels. We introduce the concept of network control of rate and propose a particular network-control method for code-division multiple access (CDMA) systems. Based on an M/M/∞//M queueing model applied to a cell under heavy traffic conditions and a new performance measure called averaged speech quality, we obtain simulation results to demonstrate how network control of rate can achieve improved speech quality or increased capacity for a given quality objective     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Multispectral data compression using bidirectional interbandprediction

The introduction of high spatial and spectral resolution sensors on-board remote-sensing spacecraft has increased, by orders of magnitude, the data rates which need to be sustained on the down-link or cross-link transmission channels. Since these channels are severely limited in capacity, the need arises to perform on-board compression to reduce the volume of data which would need to be down-linked. This paper discusses the development and refinement of a low complexity lossy spectral/spatial compression method which provides high compression ratios at low levels of distortion. The developed techniques uses pixels in adjacent bands to predict the intensity of pixels in the band being compressed via a simple linear prediction model. This prediction method when combined with a low-distortion discrete cosine transform (DCT) block coding method yields performance comparable to block-adaptive Karhunen-Loeve Transform (KLT)-DCT methods without incurring the complexity penalty of the KLT. The methods' performance suffers under misregistration. A fractional-pixel interpolation enhancement to the basic technique significantly improves the performance in the case of misregistered bands     

A medium-access control protocol for a cellular packet CDMAcarrying multirate traffic

We propose and evaluate a medium-access control (MAC) protocol for synchronous cellular packet direct-sequence code-division multiple-access (DS/CDMA). The protocol is designed for handling a variety of multimedia traffic types in an integrated wireless-access network (IWAN). For instance, the protocol is suited for carrying multiple traffic types of different priorities. An analytical model for the equilibrium state has been developed for the proposed protocol. A comparative evaluation of the protocol is done for three different radio frequency bandwidths currently under consideration for personal communication services (PCS), i.e., 1.25 MHz, 5 MHz, and 10 MHz. Our results demonstrate that the proposed protocol is both robust and flexible for the intended IWAN applications. It offers a significant multiplexing gain as the bandwidth increases     

Storage performance-metrics and benchmarks

The metrics and benchmarks used in storage performance evaluation are discussed. The technology trends taking place in storage systems, such as disk and tape evolution, disk arrays, and solid-state disks, are highlighted. The current popular I/O benchmarks are then described, reviewed, and run on three systems: a DECstation 5000/200 running the Sprite Operating System, a SPARCstation 1+ running SunOS, and an HP Series 700 (Model 730) running HP-UX. Two approaches to storage benchmarks-LADDIS and a self-scaling benchmark with predicted performance-are also described     

The correlation of texture and magnetic properties in Co-Cr films

This investigation focuses on the correlation between the crystallographic orientation of grains with respect to magnetic properties in Co-Cr films. Based on a distribution measured for the (0002) crystallographic pole densities, modified formulae describing the texture were used to calculate the coercivity Hc, the squareness ratio Rs (Mr⊥/TMs) and the anisotropy field Ha for Co-Cr films. In general, calculated values for the coercive force He agreed well with the measured values. The calculated Rs⊥. values were much larger than the measured ones, however, indicating that the influence of the demagnetizing field and the magnetostriction on the orientation of the magnetization cannot be neglected. On leave from Institute of Computing Technology, Academia Sinica, P.O.Box 2704-6, Beijing, P.R. China.     

An easy-to-use mismatch model for the MOS transistor

In this paper, a physics-based mismatch model is presented. It is demonstrated on a 0.18-/spl mu/m technology that a simple mismatch model can still be used to characterize deep-submicron technologies. The accuracy of the model is examined and found to be within 20% in the strong inversion region. Bulk bias dependence is modeled in a physical way. To extract the mismatch parameters, a weighted fit is introduced. It is shown that the width and length dependence of the mismatch parameters is given by the Pelgrom model.     

A PAC-Bayesian margin bound for linear classifiers

We present a bound on the generalization error of linear classifiers in terms of a refined margin quantity on the training sample. The result is obtained in a probably approximately correct (PAC)-Bayesian framework and is based on geometrical arguments in the space of linear classifiers. The new bound constitutes an exponential improvement of the so far tightest margin bound, which was developed in the luckiness framework, and scales logarithmically in the inverse margin. Even in the case of less training examples than input dimensions sufficiently large margins lead to nontrivial bound values and-for maximum margins-to a vanishing complexity term. In contrast to previous results, however, the new bound does depend on the dimensionality of feature space. The analysis shows that the classical margin is too coarse a measure for the essential quantity that controls the generalization error: the fraction of hypothesis space consistent with the training sample. The practical relevance of the result lies in the fact that the well-known support vector machine is optimal with respect to the new bound only if the feature vectors in the training sample are all of the same length. As a consequence, we recommend to use support vector machines (SVMs) on normalized feature vectors only. Numerical simulations support this recommendation and demonstrate that the new error bound can be used for the purpose of model selection.     

Positive temperature dependence of the electron impact ionizationcoefficient in In0.53Ga0.47As/InP HBTs

Impact ionization is a major limiting factor to the maximum operating voltage of InGaAs-based, high-speed transistors. In this work, data on the positive temperature dependence of the electron impact ionization coefficient α_n in In_0.53Ga_0.47As at medium-low electric fields are reported for the first time. The increase of α_n with temperature is opposite to the behavior normally observed in most semiconductors. This anomalous behavior implies the onset of a positive feedback between power dissipation and avalanche generation which may adversely affect the power handling capability of In_0.53Ga _0.47As-based devices, and which should be taken into account in device thermal modeling. In the experimental procedure, based on the measurement of the multiplication factor M-1 in npn In_0.53Ga _0.47As/InP Heterojunction Bipolar Transistors (HBT), particular care has been taken in order to rule out possible spurious, temperature-dependent contributions to the measured multiplication current     

A fully soft-switched extended-period quasi-resonantpower-factor-correction circuit

This paper presents the design criteria, procedure, and implementation of a soft-switched power-factor-correction (PFC) circuit based on the extended-period quasi-resonant (EPQR) principles. All power electronic devices including switches and diodes in the circuit are fully soft switched. The design method is demonstrated in a prototype circuit. The operating principles are confirmed with computer simulation and experimental results. A comparison of the EP-QR operation and zero-voltage-transition (ZVT) pulse-width modulation (PWM) method