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951.
The radiation emitted by charged, scalar particles in a Schwarzschild field with maximal acceleration corrections is calculated classically and in the tree approximation of quantum field theory. In both instances the particles emit radiation that has characteristics similar to those of gamma-ray bursters.  相似文献   
952.
Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism. Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process may be useful for the various optoelectronic applications of photoconductive a-Se layers. Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001  相似文献   
953.
This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy.  相似文献   
954.
955.
The Al2O3−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al2O3 with a concentration varying from 4·1018 to 1019 cm−3 eV−1. The surface states have a negligible influence on the thin-film transistor operation.  相似文献   
956.
957.
958.
The simple relation between representations of the covering groups of SL2 and GL2 makes it possible to fuse and extend the recent metaplectic results of Shimura, Waldspurger, Flicker, and ourselves. By giving a new (purely local andL-function theoretic) treatment of the Waldspurger-Shintani correspondence, we also simplify some of Waldspurger’s original results.  相似文献   
959.
Two‐dimensional arrangements of molecules can show remarkable cooperative electronic effects. Such effects can serve to achieve direct electronic sensing of chemical and physical processes via electrostatic effects, i.e., without transfer of charge or matter between the locus of sensing and that of detection.  相似文献   
960.
Haug  K. Maloberti  F. Temes  G.C. 《Electronics letters》1985,21(24):1156-1157
Compensated SC integrator stages are analysed and compared with respect to their sensitivities to finite amplifier gain effects. Simple single-stage amplifiers may be used in such circuits even in highly selective filtering applications. This may allow an extension of the present frequency range of SC circuits.  相似文献   
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