A fuzzy logic based-method for prognostic decision making in breast and prostate cancers

Accurate and reliable decision making in oncological prognosis can help in the planning of suitable surgery and therapy, and generally, improve patient management through the different stages of the disease. In recent years, several prognostic markers have been used as indicators of disease progression in oncology. However, the rapid increase in the discovery of novel prognostic markers resulting from the development in medical technology, has dictated the need for developing reliable methods for extracting clinically significant markers where complex and nonlinear interactions between these markers naturally exist. The aim of this paper is to investigate the fuzzy k-nearest neighbor (FK-NN) classifier as a fuzzy logic method that provides a certainty degree for prognostic decision and assessment of the markers, and to compare it with: 1) logistic regression as a statistical method and 2) multilayer feedforward backpropagation neural networks an artificial neural-network tool, the latter two techniques having been widely used for oncological prognosis. In order to achieve this aim, breast and prostate cancer data sets are considered as benchmarks for this analysis. The overall results obtained indicate that the FK-NN-based method yields the highest predictive accuracy, and that it has produced a more reliable prognostic marker model than both the statistical and artificial neural-network-based methods.     

Exposed Die-Top Encapsulation Molding for an Improved High- Performance Flip Chip BGA Package

The recent advancement in high- performance semiconductor packages has been driven by the need for higher pin count and superior heat dissipation. A one-piece cavity lid flip chip ball grid array (BGA) package with high pin count and targeted reliability has emerged as a popular choice. The flip chip technology can accommodate an I/O count of more than five hundreds500, and the die junction temperature can be reduced to a minimum level by a metal heat spreader attachment. None the less, greater expectations on these high-performance packages arose such as better substrate real estate utilization for multiple chips, ease in handling for thinner core substrates, and improved board- level solder joint reliability. A new design of the flip chip BGA package has been looked into for meeting such requirements. By encapsulating the flip chip with molding compound leaving the die top exposed, a planar top surface can be formed. A, and a flat lid can then be mounted on the planar mold/die top surface. In this manner the direct interaction of the metal lid with the substrate can be removed. The new package is thus less rigid under thermal loading and solder joint reliability enhancement is expected. This paper discusses the process development of the new package and its advantages for improved solder joint fatigue life, and being a multichip package and thin core substrate options. Finite-element simulations have been employed for the study of its structural integrity, thermal, and electrical performances. Detailed package and board-level reliability test results will also be reported     

FIRE: fractal indexing with robust extensions for image databases

As already documented in the literature, fractal image encoding is a family of techniques that achieves a good compromise between compression and perceived quality by exploiting the self-similarities present in an image. Furthermore, because of its compactness and stability, the fractal approach can be used to produce a unique signature, thus obtaining a practical image indexing system. Since fractal-based indexing systems are able to deal with the images in compressed form, they are suitable for use with large databases. We propose a system called FIRE, which is then proven to be invariant under three classes of pixel intensity transformations and under geometrical isometries such as rotations by multiples of /spl pi//2 and reflections. This property makes the system robust with respect to a large class of image transformations that can happen in practical applications: the images can be retrieved even in the presence of illumination and/or color alterations. Additionally, the experimental results show the effectiveness of FIRE in terms of both compression and retrieval accuracy.     

Application of convolutional error correcting codes in ultrawideband M-ary PPM signaling

The interference issues related to ultrawideband (UWB) radio pose tight restrictions on the maximum data rate of UWB radio telecommunication systems. A possible solution is to reduce the required signal to interference ratio (SIR) that gives satisfactory performance to the UWB system. In this letter, we propose coded M-ary UWB radio communication systems. Two classes of convolutional codes, namely, low-rate superorthogonal codes and high-rate punctured codes are considered for this purpose. Simulation results on the bit error rate of the proposed system indicates that the system is capable to work in lower SIR's and therefore supports higher data transmission rates in a real interference environment compared to the previously proposed UWB communication systems.     

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated.     

Nondegenerate Phase-Locking of a Semiconductor Laser by Sideband Injection

A semiconductor laser rate equation theory is presented that describes sideband injection locking under both weak optical injection and current modulation. By simultaneous optical injection and current modulation, control of both the phase and the frequency of a semiconductor laser is demonstrated. The phase-locked semiconductor laser operates at a different frequency to the optical injection source, with a frequency-difference given by the current modulation frequency. This method can be used to produce broadband sources, such as those producing ultrashort pulses and those required for coherent control, or to create high-frequency electronic oscillator sources with phase control by interference beating     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

Effect of Sb implantation on copper silicides formation and morphology after annealing of Cu/Si structures

In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×10¹⁴ or 5×10¹⁵ at. cm⁻² doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu₃Si and Cu₄Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb⁺ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu₄Si phase whereas the Cu₃Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.