ACT3: a high-speed, high-precision electrical impedance tomograph

Presents the design, implementation, and performance of Rensselaer's third-generation adaptive current tomograph, ACT3. This system uses 32 current sources and 32 phase-sensitive voltmeters to make a 32-electrode system that is capable of applying arbitrary spatial patterns of current. The instrumentation provides 16 b precision on both the current values and the real and reactive voltage readings and can collect the data for a single image in 133 ms. Additionally, the instrument is able to automatically calibrate its voltmeters and current sources and adjust the current source output impedance under computer control. The major system components are discussed in detail and performance results are given. Images obtained using stationary agar targets and a moving pendulum in a phantom as well as in vivo resistivity profiles showing human respiration are shown     

Calculation of shift of avalanche transit time phase delay due tooptically injected carriers in indium phosphide avalanche diodes

A computer method for the calculation of the phase shift due to optically injected carriers in an InP avalanche transit time diode has been suggested using the numerically simulated negative resistance profiles in the depletion layer of the diode. The results show that the phase shift due to hole injection is larger than that due to electron injection which explains the pronounced effect of photogenerated hole leakage current in modulating the microwave properties of InP diodes     

Measurement and modeling of the sidewall threshold voltage ofmesa-isolated SOI MOSFETs

Five-terminal silicon-on-insulator (SOI) MOSFETs have been characterized to determine the threshold voltage at the front, back, and sidewall as a function of the body bias. The threshold voltage shift with the body bias at the front and back interfaces can be explained by the standard bulk body effect equation. However, the threshold voltage shift at the sidewall is smaller than predicted by this equation and saturates at large body biases. This anomalous behavior is explained by two-dimensional charge sharing between the sidewall and the front and back interfaces. An analytical model that accounts for this charge sharing by a simple trapezoidal approximation of the depletion regions and correctly predicts the sidewall threshold voltage shift and its saturation is discussed. The model makes it possible to measure the sidewall threshold even when it is larger than the front threshold voltage     

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.     

Minimal Energy Asynchronous Dynamic Adders

In battery-operated portable or implantable digital devices, where battery life needs to be maximized, it is necessary to minimize not only power consumption but also energy dissipation. Typical energy optimization measures include voltage reduction and operating at the slowest possible speed. We employ additional methods, including hybrid asynchronous dynamic design to enable operating over a wide range of battery voltage, aggregating large combinational logic blocks, and transistor sizing and reordering. We demonstrate the methods on simple adders, and discuss extension to other circuits. Three novel adders are proposed and analyzed: a 2-bit pass transistor logic (PTL) adder and two dynamic 2-bit adders. Circuit simulations on a 0.18-mum process at low voltage show that leakage energy is below 1%. The proposed adders achieve up to 40% energy savings relative to previously published results, while also operating faster     

Nonlinear optical properties of regioregular main‐chain polyesters

We have prepared new polyesters containing quadratic, nonlinear optical (NLO) active chromophores covalently incorporated into the main chain. In these polymers, the sequence of the chromophore units along the main chain is rigorously head to tail. All the polyesters are processable, both in the melt and in solution. For one polyester, a full second‐order NLO characterization has been performed. An out‐of‐resonance d₃₃ coefficient of 21 pm/V at 1368 nm has been measured. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2719–2725, 2007     

Degradative chain transfer in vinyl acetate polymerizations using toluene as solvent

In this work, we propose that retardation in vinyl acetate polymerization rate in the presence of toluene is due to degradative chain transfer. The transfer constant to toluene (C_trs) determined using the Mayo method is equal to 3.8 × 10^?3, which is remarkably similar to the value calculated from the rate data, assuming degradative chain transfer (2.7 × 10^?3). Simulations, including chain‐length‐dependent termination, were carried out to compare our degradative chain transfer model with experimental results. The conversion–time profiles showed excellent agreement between experiment and simulation. Good agreement was found for the M_n data as a function of conversion. The experimental and simulation data strongly support the postulate that degradative chain transfer is the dominant kinetic mechanism. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3620–3625, 2007     

All-optical phase-independent logic elements based on phase shiftinduced by coherent soliton collisions

We demonstrate, for the first time to our knowledge, that a fast coherent collision between two Kerr spatial solitons can give rise to a significant phase shift for both interacting beams. The maximal collision-induced phase shift ≈π rad takes place when the amplitudes of the solitons are equal (η₁=η₂) and the length of the interaction zone is comparable with a soliton phase period. Depending on the ratio η₂/η₁, and the collision angle between the solitons, the magnitude of the phase shift can be varied within a reasonable range, for example from 180° to 40°. The analysis of the effect performed by the finite-difference beam-propagation method has shown that it is insensitive to the initial phase difference between the incident beams (δ_i), even in the case when η ₁≠η₂. It has been demonstrated that the phenomenon can be used for all-optical three-soliton logic elements, which are capable of providing more than 3-dB signal amplification and possess bi -independent output characteristics