Spatial retardation of carrier heating in scaled 0.1-μmn-MOSFET's using Monte Carlo simulations

A comprehensive Monte Carlo simulator is employed to investigate nonlocal carrier transport in 0.1 μm n-MOSFET's under low-voltage stress. Specifically, the role of electron-electron (e-e) interactions on hot electron injection is explored for two emerging device designs biased at a drain voltage V_d considerably less than the Si/SiO₂ injection barrier height φ_b. Simulation of both devices reveal that 1) although qV_d<φ_b, carriers can obtain energies greater than φ_b, and 2) the peak for electron injection is displaced approximately 20 nm beyond the peak in the parallel channel electric field. These phenomena constitute a spatial retardation of carrier heating that is strongly influenced by e-e interactions near the drain edge. (Virtually no injection is observed in our simulations when e-e scattering is not considered.) Simulations also show that an aggressive design based on larger dopant atoms, steeper doping gradients, and a self-aligned junction counter-doping process produces a higher peak in the channel electric field, a hotter carrier energy distribution, and a greater total electron injection rate into the oxide when compared to a more conventionally-doped design. The impact of spatially retarded carrier heating on hot-electron-induced device degradation is further examined by coupling an interface state distribution obtained from Monte Carlo simulations with a drift-diffusion simulator. Because of retarded carrier heating, the interface states are mainly generated further over the drain region where interface charge produces minimal degradation. Thus, surprisingly, both 0.1 μm n-MOSFET designs exhibit comparable drain current degradation rates     

Oscillation of the scattering time in a 2D electron system with oval antidots

Electron scattering by a single barrier is predicted to reveal singularities as the magnetic field is changed, because the number of electron collisions with the barrier dramatically increases as chaotic orbits around the barrier are changed into periodic orbits. To test this experimentally we have measured the magnetoresistance of AlGaAs/GaAs heterostructures with a two-dimensional electron gas and a lateral lattice containing a macroscopic number of oval-shaped antidots fabricated using electron lithography. Reproducible fluctuations in the magnetoresistance are observed at low field, which are due to the oscillations of the number of electron collisions with the antidots. The number of collisions N before the electron escapes from the antidot has been calculated as a function of B in an electric field. The position of the maxima in N(B) obtained from calculations and experiment are in reasonable agreement.     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

Observation of ionic thermocurrents in zirconia-based solid electrolytes

In ionic conductors, long range-migrating charges are a main cause of polarization processes. This has complicated, up to date, the study of ionic thermocurrents (ITC) in solid electrolytes. However, the method is appealing, as it probes directly charge-formation phenomena that are important both from a scientific point of view and for applications. This work reports on the observation of ITC in solid electrolytes. Under appropriate experimental conditions, the ITC response of a zirconia sample electroded with platinum is a reproducible one, thus opening the way to a new characterization method that may complement other well established methods, such as Impedance Spectroscopy and a number of electrochemical techniques. The general trends of the response, which is composed of two well resolved ITC peaks, is discussed. One of them, taking place at higher temperatures, conforms to the standard shape of a first order kinetics depolarization process. Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–16, 1995     

Wideband chirp measurement technique for high bit rate sources

A Mach Zehnder (MZ) interferometer has been used as an optical discriminator to measure the time-resolved frequency chirp of an optical source     

Dynamic lithium-ion battery model for system simulation

Presents here a complete dynamic model of a lithium ion battery that is suitable for virtual-prototyping of portable battery-powered systems. The model accounts for nonlinear equilibrium potentials, rate- and temperature-dependencies, thermal effects and response to transient power demand. The model is based on publicly available data such as the manufacturers' data sheets. The Sony US18650 is used as an example. The model output agrees both with manufacturer's data and with experimental results. The model can be easily modified to fit data from different batteries and can be extended for wide dynamic ranges of different temperatures and current rates.     

Global Analysis of the Flows of Fluids with Pressure-Dependent Viscosities

 To describe the flows of fluids over a wide range of pressures, it is necessary to take into account the fact that the viscosity of the fluid depends on the pressure. That the viscosity depends on the pressure has been verified by numerous careful experiments. While the existence of solutions local-in-time to the equations governing the flows of such fluids are available for small, special data and rather unrealistic dependence of the viscosity on the pressure, no global existence results are in place. Our interest here is to establish the existence of weak solutions for spatially periodic three-dimensional flows that are global in time, for a large class of physically meaningful viscosity-pressure relationships. (Accepted May 1, 2002) Published online November 15, 2002 Communicated by S. S. ANTMAN     

Crystal structures of two ancylite modifications

The crystal structures of two ancylite specimens from Khibiny massif (the Kola Peninsula, Russia)—ancylite-(Ce) from alkali hydrothermalites (Sr_1.01Ca_0.02Ba_0.01)_Σ1.04(Ce_0.52La_0.28Nd_0.11Pr_0.04 Sm_0.01)_Σ0.96(CO₃)₂(OH_0.83F_0.13)_Σ0.96 · 0.9H₂O and ancylite-(Ce) from carbonatites—have (Sr_0.80Ca_0.05Ba_0.01)_Σ0.86(Ce_0.62La_0.40Nd_0.09Pr_0.03) _Σ1.14(CO₃)₂(OH_0.99F_0.15)_Σ1.14 · 1.0H₂O been refined by the Rietveld method. A focusing STOE-STADIP diffractometer with a bent Ge(111) primary monochromator was used (λ MoK _{α 1} radiation, 2.16° < 2θ < 54.98°; reflection number 237–437). All the computations for ancylite from alkali hydrothermalites were performed within the sp. gr. Pmc2₁, a = 5.0634(1) Å, b = 8.5898(1) Å, c = 7.2781(1) Å, V = 316.55(1) ų, R _wp = 1.90; the computations for ancylite from carbonatites were performed within the sp. gr. Pmcn, a = 5.0577(1) Å, b = 8.5665(2) Å, c = 7.3151(2) Å, V = 316.94(1) ų, R _wp = 2.38 in the anisotropic approximation of thermal vibrations of cations and oxygen atoms.