激光远距作用的机制与效应

本文定量分析激光远距作用的机理并对它们在治癌中的作用作简要的论述。     

新型可调剪切差平行分束偏光器设计

本文给出了一种新型可调的切差平行分束偏光器设计。它调节方便,可获得较大平行分束剪切差,并可一镜多用     

The Generalized KKM Map and Its Applications to Variational Inequalities

In this paper,applying the concept of generalized KKM map,we study problems ofvariational inequalities.We weaken convexity(concavity)conditions for a functional of two variables■(x,y)in the general variational inequalities.Last,we show a proof of non-topological degree meth-od of acute angle principle about monotone operator as an application of these results.     

受激喇曼散射在掺铒光纤放大器中的影响

本文在分析了均匀掺杂分布式光纤放大器（d－EDFA）的基础上，提出了沿传输方向掺杂浓度单调下降（单变），和降升结合（两变）的两种渐变型分布式光纤放大器，并用传输方程研究了透明传输和最佳掺杂浓度下，受激喇曼散射对均匀、单变和两变型三种d－EDFA的各种特性的影响．     

Aliasing Effects and Sampling Theorems of Spherical Random Fields when Sampled on a Finite Grid

Aliasing effects are investigated for spherical random fields sampled on a finite grid. Using the spherical harmonics expansion, it is shown that for a band-limited spherical random field its trend and spectrum can be uniquely reconstructed from the sampled field if the sampling points are judiciously designed. Analytical expressions are also obtained for aliasing errors in the trend and the spectrum when the field is not band-limited.     

Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm² was obtained. The emission current density from the SiNC films reached 1 mA/cm² under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.     

谱约束下对称正交对称矩阵束的最佳逼近

讨论了对称正交对称矩阵的广义逆特征值问题，得到了通解表达式和最佳解的表达式。     

Application of asymptotic waveform evaluation to eigenmode expansion method for analysis of simultaneous switching noise in printed circuit boards (PCBs)

In this paper, the asymptotic waveform evaluation (AWE) technique is first applied to the conventional eigenmode expansion method for characterizing a power/ground (P/G) plane pair and analyzing the simultaneous switching noise on such plane pairs for printed circuit boards or multichip modules. The application of AWE avoids a large number of iterations in computing the impedance frequency response of a P/G plane pair structure and greatly reduces the computation time. Meanwhile, to obtain an accurate solution in an entire frequency range, we employ the complex frequency hopping technique which can help select multiple expansion points. In addition, the proposed approach can also be used to characterize the P/G plane pair structures with irregular shapes. Three examples demonstrate its high efficiency and good accuracy.     

Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO

Wet etch rates at 25°C for Zn_0.9Mg_0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min⁻¹ with HCl/H₂O (5×10⁻³−2×10⁻² M) and 120–300 nm · min⁻¹ with H₃PO₄/H₂O (5×10⁻³−2×10⁻² M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol⁻¹. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates of 1.2–50 nm · min⁻¹ in HCl/H₂O (0.01–1.2 M) and 12–54 nm · min⁻¹ in H₃PO₄/H₂O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6 kCal · mol⁻¹. The resulting selectivity of Zn_0.9Mg_0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H₃PO₄.     

Development of a low cost microwave mixer using a broad-band substrate integrated waveguide (SIW) coupler

A low cost single-balanced mixer is designed using a newly designed 90/spl deg/ substrate integrated waveguide (SIW) 3-dB coupler, which takes the advantages of low cost, low profile, and high performance. An X-band single-balanced SIW mixer is designed and fabricated with a standard printed circuit board process. Measured conversion loss of 6.8dB and the wide-band response from 8.5 to 12GHz are presented.