Fabrication of quantum dots on the InSb (110) surface

Using a scanning tunneling microscope, quantum dots with diameters of order 25 Å have been fabricated on the cleaved InSb (110) surface in UHV. Both In and Sb atoms were clearly resolved on the cleaved surface.     

ASYMPTOTIC BEHAVIOR OF SOLUTIONS OF NONLINEAR NEUTRAL DIFFERENTIAL EQUATION

The boundedness of the every solution and the asymptotic behavior of all solutions of the nonlinear neutral delay differential equation [x(t) - P(t)x(t - t)]' Q1 (t)f(x{t-σ1))-Q2(t)f(x(t -σ2))=0,t≥t0 are investigated, whereτ,σ1,σ2∈(0,∞), P∈C([t0,∞),R), and Q1,Q2∈C([t0,∞),R), f∈C(R,R). The sufficient conditions obtained improve the existing results in the literatures.     

Asymptotic speeds of spread and traveling waves for monotone semiflows with applications

The theory of asymptotic speeds of spread and monotone traveling waves is established for a class of monotone discrete and continuous‐time semiflows and is applied to a functional differential equation with diffusion, a time‐delayed lattice population model and a reaction‐diffusion equation in an infinite cylinder. © 2005 Wiley Periodicals, Inc.     

用于频率合成器的低损耗声表面波滤波器

简述了产生声表面波滤波器插入损耗的主要机理和获得低损耗的原则；介绍了根据此原则对１００～５００ＭＨｚ５种滤波器的研制过程和结果。实验表明，采用镜像阻抗连接换能器结构可达到３～４ｄＢ的低损耗，并成功地应用于频率合成器中。     

非均匀有耗媒质部分参数的重建

在高频部分，通过用Ｗｅｎｔｚｅｌ—Ｋｒａｍｅｒｓ—Ｂｒｉｌｌｏｕｉｎ—Ｊｅｆｆｅｒｙｓ（ＷＫＢＪ）解作为内场近似，本文证明了有耗非均匀媒质的反射系数在复平面上的轨迹是个圆。根据不同入射角度、不同极化的高频反射系数圆的圆心与半径，可以重建出有耗媒质的部分关键参数。本文方法同时适用于已知复反射系数谱和仅知反射系数振幅情况。文中给出具体重建实例。     

Nd：MgO：LiNbO3晶体的荧光光谱及其双晶体腔内互倍频实验

采用激光感生荧光技术测量了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３晶体的偏振荧光光谱，简要地说明了Ｎｄ：ＭｇＯ：ＬｉＮｂＯ３双晶体腔内互倍频的基本原理，并在实验中用染料激光作泵浦源实现了其双晶体腔内互倍频运转；得到５４３ｎｍ横模倍频绿光单端输出约ＹＭＷ，腔前泵浦阈值约３８ＭＷ，总转换效率约为１．３％。     

分散图象压缩的遗传算法

基于分形和PIFS函数的特点，提出一种改进的遗传算法用于分形压缩分块的定义域匹配搜索算法。该方法克服了原来分形图象压缩中分类匹配算法固有的局部最优性和随机搜索的缺点，是一种具导引的全局优化的搜索算法。分析和实验表明，该方法的图象压缩比高，解码质量好，若应用遗传算法的并行性，其编码速度也得到提高。     

荧光波长对共焦显微镜成像特性的影响

导出了共焦显微镜中不同荧光波长情况下的荧光功率传输函数、三维脉冲响应函数（3D－PSF）和三维光学传递函数（3D－OTF）。结果表明，不同的荧光波长对共焦显微镜的空间截止频率、分辨率、光学传递函数存在明显的影响。当激发波长与荧光波长的比值下降到一定程度时，可以看到明显的失锥现象。     

几种N-取代马来酰胺酸辅酶模型的核磁共振研究

我们对8种N-取代马来酰胺酸辅酶模型与不同类型的亲核试剂反应后生成的产物进行了¹H、¹³C NMR的研究, 测得¹H、¹³C谱化学位移,研 究探讨其规律性, 并测试了IR谱和元素分析.     

Influence of lattice self-heating and hot-carrier transport ondevice performance

As device technologies improve, the traditional drift-diffusion transport model becomes inadequate to predict the performance of state-of-the-art semiconductor devices. The reasons are believed to be the larger field and field gradient inside advanced devices which cause lattice heating and hot carrier nonlocal transport phenomena. For more accurate prediction on device performance, a new device simulator capable of full thermodynamic simulation was developed. The carrier and carrier energy transport equations are directly derived from the Boltzmann transport equation, and the energy transfer among electrons, holes and crystal lattice takes into account most of the possible mechanisms. This simulator was used to simulate the DC behavior of a BJT and a half-micron NMOS. The simulation results show that for advanced devices, not only the drift-diffusion model becomes inadequate, but including only one of the two thermal effects results in error in simulated device characteristics