A numerically stable algorithm for two server queue models

In this paper, we consider a queueing system in which there are two exponential servers, each having his own queue, and arriving customers will join the shorter queue. Based on the results given in Flatto and McKean, we rewrite the formula for the probability that there are exactlyk customers in each queue, wherek = 0, 1,…. This enables us to present an algorithm for computing these probabilities and then to find the joint distribution of the queue lengths in the system. A program and numerical examples are given.     

高等师范学校物理专业课程结构改革研究

为解决高等师范院校物理专业学生的知识结构和实际能力与社会需要明显不相适应的矛盾，我们对四年制物理专业的课程结构进行了全面改革。改革后，毕业生不仅能胜任普通中学或职业中学（职业中专）的教学，而且有能力参与厂矿企业的技术工作，具有更广泛的适应性和更强的竞争力。     

Applications of the finite difference techniques to the compensatedVIP 3 dB directional coupler

A new and simple compensated structure for a vertically installed planar (VIP) 3 dB directional coupler has been studied theoretically as well as experimentally by combining an improved 2-D-general finite difference (2-D-GFD) design procedure with a three-dimensional finite difference time domain (3-D-FDTD) method. The obtained full wave analysis results agree well with the measured ones. The investigations have shown that with this planar compensated structure, a better performance of the VIP coupler in the L-band can be realized by only using the same kind of dielectric substrate for its vertical and horizontal one     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities     

金属羰基化合物（CpFe（CO）2）2与金属氧化物表面作用的傅里叶变…

用漫反射红外光谱和光声红外光谱研究了金属羰基化合物（ＣｐＦｅ（ＣＯ）２）２Ｃｐ＝η＾５－Ｃ５Ｈ５与酸性，中性和碱性Ａｌ２Ｏ３及ＴｉＯ２的相互作用，结果表明，在Ａｌ２Ｏ３表面生成的洗生物种类及浓度与Ａｌ２Ｏ３的酸碱度明显相关，在酸性Ａｌ２Ｏ３表面，主要存在衍生物（ＣｐＦｅ（ＣＯ）２Ｆｅ－Ｈ－Ｆｅ（ＣＯ２Ｃｐ）＾＋及少量的ＣｐＦｅ（ＣＯ）２（－Ｏ－）；在中性Ａｌ２Ｏ３表面存在的ＣｐＦｅ（ＣＯ）２（－Ｏ     

旋波媒质基本参数的一种测试方法

本文提出了直接利用旋波材料板的Ｓ参数获得其基本参数的方法。通过自由空间测量旋波材料板的反射场和透射场，可以反演得到媒质的复介电常数、复磁导率、旋波量以及透射场的轴比和旋转角，测试程序简单，结果精度高。     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

薄膜磁头磁轭制备工艺研究

本文重点讨论了用不同的工艺方法来制备薄膜磁头中的关键元件-磁轭。采用多次光刻的方法克服湿法工艺中磁性膜NiFe层的侧向钻蚀问题，从而实现对磁轭几何尺寸的精确控制，并对几种工艺方法的优缺点作了比较详细的分析。     

苯并噻唑重氮氨基偶氮苯与汞（Ⅱ）的显色反应及其应用

报道了新试剂苯并噻唑重氮氨基偶氮苯的合成及其与汞（Ⅱ）的显色反应，在ＴｒｉｔｏｎＸ－１００存在下弱碱性介质中，试剂与汞形成２：１的橙红色络合物，最大吸收波长位于５２０ｎｍ处，表观摩尔吸光系数为１．５１×１０＾５Ｌ．ｍｏｌ＾－１．ｃｍ＾－１。汞量在０～１．２ｍｇ／Ｌ范围内遵守比尔定律，直接应用于废水中微量汞的测定，结果满意。