Precise measurement of magnetic moment of short-lived β-emitting nuclei12B ( I π=1+, T 1/2=20.18 ms)

The spin polarized β-emitting nuclei¹²B (I ^π=1⁺,T _1/2=20.18 ms) were produced by the nuclear reaction¹¹B(d, p)¹²B and by the selection technique of the incident deuteron energy and the¹²B recoil angle following the nuclear reaction. The nuclear magnetic moment of the short-lived nuclei¹²B was measured by β-NMR with the β-NMR and β-NQR setup established for the first time in China. The nuclear magnetic moment of¹²B was determined to be μ=0.99993±0.00048 nm org=0.99993±0.00048 after the precise correction of the Knight shift.     

Boundary value problems for first order impulsive delay differential equations with a parameter

In this paper, by means of the method of upper and lower solutions and monotone iterative technique, the existence of maximal and minimal solutions of the boundary value problems for first order impulsive delay differential equations is established.     

Architectural Control of Hierarchical Nanobelt Superstructures in Catanionic Reverse Micelles

BaXO₄ (X = Mo, W) nanobelts and a variety of hierarchical superstructures assembled from the nanobelts have been synthesized in a catanionic reverse‐micelle system. The effects of various factors, such as the mixing ratio (r) between the anionic and cationic surfactants, the temperature, and the presence of polymeric additives, on the formation of the nanobelts and their hierarchical assembly have been examined in detail. In particular, r has been shown to be powerful in modulating the formation and assembly of the BaMoO₄ and BaWO₄ nanobelts. Architectural control of the penniform nanobelt superstructures has been readily achieved by changing the experimental parameters. A plausible two‐stage growth mechanism has been proposed for the formation of penniform BaXO₄ nanobelt superstructures in catanionic reverse micelles.     

用改进嵌入原子法计算Cu晶体的表面能

用改进嵌入原子法(MEAM)计算了Cu晶体12个晶面的表面能.结果表明，密排面(111)的表面能最小.其他晶面的表面能随其晶面与(111)晶面夹角的增加而增加，据此可以粗略地估计各晶面表面能的相对大小.给出的几何结构因子的确定方法及结果可以直接用于计算其他面心立方晶体的表面能及其他特性.在Cu,Ag等面心立方薄膜中出现(111)择优取向或织构的机理是表面能的最小化. 关键词： 改进嵌入原子法 铜 表面能 计算     

RED gateway congestion control using median queue size estimates

This paper focuses on the queue size estimation problem in random early detection (RED) gateways. Queue size estimation plays a fundamental role in the congestion control dynamics of RED, as it determines gateways' awareness of network congestion, which in turn determines the packet dropping/marking decision. Conventional RED gateways use exponentially weighted moving averages (EWMA) to estimate the queue size. These infinite impulse response (IIR) filters require very small EWMA weights in order to effectively avoid nonlinear instabilities in RED and to filter out bursty increases in the queue size. While small EWMA weights enable gateways to accommodate transient congestion, they also lead to gateways' failure to closely track rapid queue size depletion and thus causes link under utilization. We investigate the use of simple nonlinear queue size estimators. In particular, we study the congestion control dynamics of a network where adaptive weighted median filters are used for queue size estimation by the gateways. Analytical results for the expected queue size in the steady state are derived. Under this new queue size estimation framework, design guidelines for the remaining RED parameters are provided. Simulation results show that the proposed algorithm provides greater network power, better prevention of global synchronization, and a fairer treatment to bursty traffic than the RED algorithm does.     

质子交换铌酸锂波导MMI光功分器

利用三维非旁轴近似光束传输法对退火质子交换铌酸锂渐变折射率分布波导中的自镜像效应进行分析与模拟 .在此基础上 ,利用退火质子交换技术在 X切 Y传铌酸锂衬底上进一步制作了 1× 8MMI光功分器 .测试表明器件实现了 1路分成 8路的光功分功能 .     

cdma 1x终端测试

本文主要介绍了目前行业内对cdma 1x终端的测试要求.     

Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.