平面上随机级数的性质

研究了平面上系数{Xn,n≥0}为(?)-混合序列在满足,(q>1)等条件下的随机级数的增长性及值分布,得到了比较好的结果．     

脂松香、石炭酸松香树脂和马林酸松香树脂的红外光谱剖析及鉴别

本文对脂松香、石炭酸松香树脂和马林酸松香树脂的红外光谱剖析及鉴别，方法快速，简便，准确。     

ICP-AES测定饮用水源中的Cu、Mn、Pb、Cd、Zn

用ICP－AES法同时测定饮用水源中的Cu、Mn、Pb、Cd、Zn等重金属元素，具有基体效应小、测量范围宽等优点。检出限为0．2－4．0μg/L，回收率为91．5％－103．9％，相对标准偏差为0．29％－1．5％，测定密码样与实际样品，结果令人满意。     

Comparison of the boundary theory with the contact rule of phase regions and Gupta’s method

The phase boundary theory and the contact rule of phase regions are compared, and some weaknesses of the latter are manifested. The comparison between the Gupta’s method and the boundary theory method for constructing multicomponent isobaric sections is also presented.     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

Synthesis of a Novel Aromatic Diamino-bridged Bis（β-cyclodextrin） and its Inclusion Complexation with Dyes Molecules

Bridged bis(β-cyclodextrin)s (CDs), as a very important family of CD derivatives, have been known that they can significantly alter the molecular binding ability and selectivity toward a variety of guests in comparison with parent cyclodextrin. Their two…     

通过平均场处理的严格重正化群变换方法对Potts模型的应用

本文运用作者所发展的严格docimation- 平均场近似方法对Potts 模型的临界指数作了计算.所得结果与严格解符合得很好, 而与计算工作量相当的重正化群方法相比, 精确度大为提高。 关键词：     

双驱动x射线激光等离子体能谱特性研究

用时间积分空间分辨的平晶千电子伏谱仪测量了钽激光等离子体发射波长范围为045— 075nm的软x射线能谱，精确测量和准确辨认出类镍、类钴和类铁离子的共振线及类镍离子 的内壳层跃迁线-对实验结果处理，获得了辐射线谱的强度-通过谱线比率的诊断推断脉冲激 光时差对等离子体状态的影响，至少也可部分解释激光上能级的粒子数及等离子体的 电离程度- 关键词： 离子谱特性 软x线能谱强度 谱线辨认     

A new approach to exponential stability analysis of nonlinear systems

An effective method for analyzing the stability of nonlinear systems is developed. After introducing a novel concept named the point-wise generalized Dahlquist constant for any mapping and presenting its useful properties, we show that the point-wise generalized Dahlquist constant is sufficient for characterizing the exponential stability of nonlinear systems.     

UPWIND FINITE VOLUME SCHEMES FOR SEMICONDUCTOR DEVICE

The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind