声流现象的研究及其应用

本文从声流产生的机理出发，综合了影响声流的诸因素，介绍了声流现象的检测方法及声流效应的应用。     

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Large-scale preparation of thin strain-relaxed SiGe is achieved by combining ion implantation and ultrahigh vacuum chemical vapor deposition. The resulting materials were analyzed by double crystal X-ray diffraction, micro-Raman spectroscopy, and tapping mode atomic force microscope. Results revealed that 100-nm-thick Si_0.7Ge_0.3 layers with the diameter of 125 mm and full strain relaxation are successfully prepared by pre-modifying the Si substrates using 50 keV Ar⁺ ions. The strain relaxation is also disclosed to change with both ion species and energy. However, post-modification of SiGe by ion implantation will cause serious damage to the crystal structures, and result in the formation of poly-crystal SiGe.     

3mm波段极近距离雷达

提出一种极近距离雷达概念，并导出其作用距离公式，在此基础上研制出一台３ｍｍ波段极近距离多普勒雷达样机．试验结果表明该雷达结构简单，成本低廉，在作用距离为零点几米至几米范围内可获得较高的定距精度．     

铁电致冷材料及其应用

利用铁电材料的电热效应（即逆热释电效应）可以制作新型致冷器。近年的研究进展表明，铁电致冷有可能发展成为一种新型的室温致冷技术。本文扼要介绍了铁电致冷的基本原理、可行性，以及铁电致冷材料和相关技术的发展，并展望了铁电致冷材料的发展前景。     

Comparisons of PWM and one-cycle control for power amplifier with multilevel converter

Based on the concepts of cascade multilevel converters and one-cycle technique, comparisons are conducted to characterize the distortion of the pulsewidth modulation (PWM) and one-cycle control methods that were applied to converters. Simulation results for the different control schemes are obtained in PSIM software initially to see the effect of one-cycle control different from that of PWM control. Through the comparisons, the advantages and disadvantages are identified for each method. The one-cycle scheme is better than PWM control in reducing undesirable harmonics and tracing dynamic waveforms. Simulation and experimental results are also provided to verify the conclusions.     

Call control and traffic transport for connection-oriented highspeed wireless personal communications over metropolitan area networks

A distributed circuit-switched approach for supporting the deployment of high speed wireless personal communication services in urban areas through the interconnection of base stations via metropolitan area networks (MANs) is proposed. Broadband MANs minimize traffic congestion by dynamic sharing of link capacity and by serving as distributed switches for partitioning call control functions. While the DQDB protocol readily supports distributed packet-switching over the IEEE 802.6 MAN, isochronous traffic such as voice and video is best supported by circuit-switched connections. The authors present an enhanced bi-state pre-arbitrated (PA) transport mechanism, and associated call control and handoff management techniques, which enable distributed circuit-switching over the MAN. These capabilities are not currently addressed in the 802.6 standards. The bi-state PA transport mechanism facilitates statistical multiplexing of variable rate isochronous traffic sources. The network capacity is constrained by the call setup delay performance, and is analyzed by simulations. Alternative signaling architectures, involving different placements of call control network elements, are evaluated. The effects of erasure nodes, and close bus versus open bus architectures, are considered. The overlap inter-MAN call setup procedure is proposed to reduce delays. Different call handoff procedures are formulated according to the type of handoff and the resulting change in call connectivity. Most handoffs are intra-MAN, requiring simple procedures with short delays     

一种低压低功耗SRAM/SOI单元设计

提出一种改进4管自体偏压结构SRAM/SOI单元.基于TSUPREM4和MEDICI软件的模拟和结构性能的分析,设计单元结构并选取结构参数.该结构采用nMOS栅下的含p+埋沟的衬底体电阻代替传统6管CMOSSRAM单元中的pMOS元件,具有面积小、工艺简单的优点.该结构可以在0.5V的电源电压下正常工作,与6管单元相比,该单元瞬态响应正常,功耗只有6管单元的1/10,满足低压低功耗的要求.     

两种自主开发的图形外延SiGe工艺

使用清华大学微电子学研究所研发的UHV/CVD系统深入研究了图形外延SiGe工艺,分别选用单一的SiO2介质层和SiO2/P0ly-Si复合介质层,作为图形外延SiGe单晶材料的窗口屏蔽介质,开发出了不同的实用化图形外延SiGe工艺.     

Reliability of Au bump––Cu direct interconnections fabricated by means of surface activated bonding method

As a room temperature bonding method, surface activated bonding (SAB) method has been introduced to be one of the most appropriate interconnection methods for the next generation of electronic packaging. Thus it is important to study the reliability of SAB interconnection in long term life test.In this paper, interconnections of Au bump and Cu film bonded by SAB method were performed in high temperature thermal aging test. Degradation of properties such as electrical resistance, shear strength of bump and interface microstructure during aging process were studied to investigate the failure mechanism of the interconnection. Intermetallic compound Cu₃Au was found formed at the interface during thermal aging, and it causes evolvement of the properties and failure mode of the interconnection changing in shear test. Results reveal that SAB is suitable for the interconnection between Au bump and Cu film and it is reliable in thermal reliability test.     

虚拟仪器在教学中的应用

主要介绍了Multisim2001中虚拟仪器库中函数发生器、示波器的使用方法及功能；并在Multisim2001环境中仿真单管放大电路、桥式整流滤波电路。由调试结果，分析了其在教学中应用的可行性。