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71.
Two novel transition metal-doped tungsten bronze oxides, Pb2.15Li0.85Nb4.85Ti0.15O15 (PLNT) and Pb2.15Li0.55Nb4.85W0.15O15 (PLNW), are synthesized by high-temperature solid-state reactions. The Rietveld method using the high-resolution synchrotron radiation indicates that PLNT and PLNW crystallize in the orthorhombic polar noncentrosymmetric space group, Pmn21 (no. 31). As a class of tungsten bronze oxide, PLNT and PLNW retain a unique rigid framework composed of d0 transition metal cation (Ti4+ or W6+)-doped highly distorted NbO6 octahedra along with the subsequently generated Pb/LiO12 and PbO15 polyhedra. Interestingly, the d0 transition metal-doped tungsten bronzes, PLNT and PLNW, exhibit extremely large second-harmonic generation (SHG) responses of 56 and 67 × KH2PO4, respectively. The observed immeasurably strong SHG is mainly attributed to a net polarization originating from the alignment of highly distorted NbO6 octahedra with doped transition metals in the frameworks. It is believed that doping transition metal cations at the B-site of the tungsten bronze structures should be an innovative strategy to develop novel high-performance nonlinear optical materials.  相似文献   
72.
We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.  相似文献   
73.
针对某双列直插式(DIP)封装器件在整机温循试验中出现的失效现象,分析在器件与电路板焊接环节、电路板与整机装配环节和整机温循试验环节3个工况下可能的失效原因,对原因分别进行单工况和多工况的失效仿真分析。针对不同仿真模型在不同工况下的叠加仿真难题,提出基于ANSYS Workbench有限元软件的多应力叠加仿真方法,对比单一工况和多种工况下的仿真结果。结果表明,DIP封装器件失效是器件在焊接尺寸不匹配、过定位装配和温循试验三种工况下,机械应力和热应力的叠加使玻璃绝缘子产生裂纹导致的,有限元仿真结果与实验结果基本吻合,为DIP封装器件在多工况下应力叠加失效的故障机理研究提供一种可参考的仿真方法。  相似文献   
74.
刘敏  郑柳  何志  王文武 《激光与红外》2022,52(4):515-521
目前,激光退火技术被广泛应用于半导体加工领域,但对如何选择激光条件进行相应的退火并没有系统清晰的准则可以参考,尤其是在硅的深注入杂质激活方面。本文通过对激光照射在硅晶圆上形成的温度场分布进行数值模拟研究,分析了激光波长和脉冲宽度对加热深度以及晶圆背面温度的影响。结果表明,延长激光波长或脉冲宽度,都有助于增加激光退火的加热深度。而对于特定的激活深度需求,存在着最优的激光波长和脉冲宽度组合,可以使退火所需要的激光脉冲能量最低,硅晶圆背面的温升最小。本文通过模拟仿真给出了激活深度在1~10μm范围内的最优波长和脉宽值,可为实现高效的深硅注入激光激活工艺提供重要的条件参考。  相似文献   
75.
采用熔融淬火技术制备了0.2 mol% Er2O3、1 mo l% Yb2O3、0.1 mol% Tm2O3和x mol% Pr6O11( x=0.25、 0.3、0.35和0.4)掺杂的65TeO2-15ZnO-10Na2O-10WO3系碲酸盐玻璃,通过X 射线衍射(X-ray diffraction,XRD)、差热扫描曲线(differential scanning calorimetry,DSC)对玻璃样 品的抗析晶性和热稳定性 进行了表征。结果表明,玻璃样品具备良好的抗析晶性,析晶温度和转变温度差值为140 ℃,具有较好 的热稳定性。吸收光谱结果显示,Er3+/Yb3+/Tm3+/Pr3+共掺碲 酸盐玻璃在980 nm处有较强的吸收峰,故可 以采用980 nm泵浦源对该玻璃样品进行激发。在1 200—2 000 nm近 红外波段范围,玻璃样品存在峰值中 心为1.35 μm、1.53 μm和1.8 μm 3个波段发射峰,且3个发射峰的荧光半高宽(full width at half maxima, FWHM)均大于100 nm,其覆盖了光信号传输的E、S、C和C+L 4个波段,大幅度地提高了掺铒 光纤放大器(erbium doped fiber amplifier,EDFA)的放大带宽。  相似文献   
76.
77.
An Y  Ji M  Baiyin M  Liu X  Jia C  Wang D 《Inorganic chemistry》2003,42(14):4248-4249
A novel layered K(4)Ag(2)Sn(3)S(9) x 2KOH was synthesized solvothermally. A mixture of ethanol and HSCH(2)CH(SH)CH(2)OH was used for the synthesis. The HSCH(2)CH(SH)CH(2)OH plays an important role and appears to serve as a mineralizer for the solvothermal reaction. A layer comprises Sn(3)S(9)(6)(-) clusters linked by Ag(+) ions and possesses two types of 1D channels in which potassium ions are located. The compound crystallizes in the monoclinic P2(1)/m space group [a = 7.8071(2) A, b = 27.3508(1) A, c = 10.5008(2) A, alpha = 90 degrees, beta = 103.874(1) degrees, gamma = 90 degrees, Z = 4]. Its crystal structure, composition analysis, and IR are presented.  相似文献   
78.
The attempted Baylis-Hillman reactions of N-tosyl aldimines and aryl aldehydes with 3-methylpenta-3,4-dien-2-one gave the corresponding Baylis-Hillman adducts 3 and 6 in moderate to good yields in the presence of DMAP in DMSO, respectively. In the case of the aza-Baylis-Hillman reactions of N-tosyl aldimines with 3-methylpenta-3,4-dien-2-one catalyzed by PBu3, the corresponding aza-Baylis-Hillman derivatives 4 and 5 were formed at the same time.  相似文献   
79.
The title compound, 2‐{N‐[2‐(2‐hydroxy­benzamido)ethyl­ammonio­ethyl]amino­carbon­yl}phenolate, C18H21N3O4, crystallizes in a zwitterionic form as a result of inter­molecular proton transfer and possesses a negatively charged phenolate group and a protonated amino group. The 2‐hydroxy­benzamide and 2‐(amino­carbonyl)­phenolate moieties attached to the two ends of the C—C—N—C—C backbone adopt a cis conformation in relation to this backbone. All N‐ and O‐bound H atoms are involved in hydrogen‐bond formation; the zwitterions are first linked into head‐to‐tail dimers, which are further organized into a two‐dimensional network parallel to the crystallographic bc plane.  相似文献   
80.
In this paper we study the behavior of solutions of some quasilinear parabolic equations of the form
(?u?t) ? i=1n (ddxi) ai(x, t, u, ux) + a(x, t, u, ux)u + f(x, t) = O,
as t → ∞. In particular, the solutions of these equations will decay to zero as t → ∞ in the L norm.  相似文献   
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