A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

应用激光活化饵料藻种的研究

应用Nd:YAG激光(波长1.06μm,功率5w,照射时间0.5-3 min)和Ar+激光(波长488nm,功率70mw,照射时间5-15min)对长期保存的不同保存形式的塔胞藻(Pyramidomonassp.)进行辐照处理。研究了不同剂量激光辐照对藻体生长和叶绿素含量的影响。实验结果表明:照射剂量为60s的Nd:YAG激光及剂量为15min的Ar+激光对液体保存形式的藻种有较明显的促长效果,接种后这两种激光处理组的比生长速率分别较对照提高达53.33%和28.89%,叶绿素含量分别增加73.33%和65.69%。两种激光对液体保存藻种的活化效果均好于固体保存种。     

协同作战能力简析

协同作战能力(CEC)是一种充分利用网络技术的新型海岸防空技术，给系统的作战能力带来了革命性的交破。本文对协同作战能力的产生、功能、组成以及未来的发展趋势作了详细的介绍，阐述了CEC系统的总体设计思想。在此基础上，将CEC系统与传统的作战系统的性能和设计思想在各方面进行了比较，交出了CEC系统各方面的优越性能。协同作战能力是现代和未来作战系统的发展方向，CEC系统的发展必将成为衡量各国国防科技现代化的重要指标。     

Data-efficient blind OFDM channel estimation using receiver diversity

We investigate non data-aided channel estimation for cyclically prefixed orthogonal frequency division multiplexing (OFDM) systems. By exploiting channel diversity using only two receive antennas, a blind deterministic algorithm is proposed. Identifiability conditions are derived that guarantee the perfect channel retrieval in the absence of noise. In the presence of noise, the proposed method has the desired property of being data efficient-only a single OFDM block is needed to achieve good estimation performance for a wide range of SNR values. The algorithm is also robust to input symbols as it does not have any restriction on the input symbols with regard to their constellation or their statistical properties. In addition, this diversity-based algorithm is computationally efficient, and its performance compares favorably to most existing blind algorithms.     

基于Matlab与VC混合编程的研究

针对Matlab和Visual C^ 应用的特点，讨论了在VC中调用Matlab的3种方法，着重介绍了利用Matcom和Matlab编译器进行混合编程的方法和步骤，为开发处理大量数据的应用程序提供了依据。     

基于ERP系统的电子商务平台的分析

提出了利用DNA和XML技术构建基于ERP系统的电子商务平台的解决方案，并且给出了数据接口的几种实现方式。     

激光扫描加工图形控制模型的研究

针对激光扫描加工中存在固有图形畸变的情况,提出了DEA(dual-ends approch)控制模型。由于该模型不仅考虑了透镜焦距f、激光入射角θ、振镜偏转角和光学镜组之间的距离,而且还考虑了透镜中心厚度、透镜曲面曲率半径以及透镜介质折射率,因此提高了激光扫描加工系统的加工精度,减小了加工误差。同时利用VC++6.0编制了一个对话框程序,对传统fθ控制模型和DEA控制模型进行了分析比较,结果显示,DEA控制模型能正确表达所设计的加工图形,其精度高于fθ图形控制模型。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.