Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A Note on PIN Polynomials and PRIN Rational Functions

This brief presents a necessary and sufficient condition for testing positive, real, imaginary, and negative rational functions. A related term, the positive, imaginary, and negative polynomial, is defined and two necessary and sufficient conditions for testing it are given.     

Driving Mechanisms of Delamination Related Reliability Problems in Exposed Pad Packages

Exposed pad packages were introduced in the late 1980s and early 1990s because of their excellent thermal and electrical performance. Despite these advantages, the exposed pad packages experience a lot of thermo-hygro-mechanical related reliability problems during qualification and testing. Examples are die lift, which occurs predominantly after moisture sensitivity level conditions, and die-attach to leadframe delamination leading to downbond stitch breaks during temperature cycling. In this chapter, nonlinear finite element (FE) models using fracture mechanics based J-integral calculations are used to assess the reliability problems of the exposed pad package family. Using the parametric FE models any geometrical and material effects can be explored to their impact on the occurrence diepad delamination, and dielift. For instance the impact of diepad size is found to be of much less importance as the impact of die thickness is. Using the fracture mechanics approach, the starting location for the delamination from thermo-hygro-mechanical point of view is deducted. The results indicate that when diepad delamination is present, cracks are likely to grow beneath the die and dielift will occur. The interaction between dielift and other failure modes, such as lifted ball bonds, are not found to be very significant. The FE models are combined with simulation-based optimization methods to deduct design guidelines for optimal reliability of the exposed pad family.     

Investigation of Mechanical and Electrical Characteristics for Cracked Conductive Particle in Anisotropic Conductive Adhesive (ACA) Assembly

In an anisotropic conductive adhesive (ACA) assembly, the electrical conduction is usually achieved with the conductive particles between the bumps of integrated circuit (IC) and corresponding conductive tracks on the glass substrate. Fully understanding of the mechanical and electrical characteristics of ACA particles can help to optimize the assembly process and improve the reliability of ACA interconnection. Most conductive particles used in the ACA assembly are with cracks in the metal coating of the particles after the ACA bonding. This paper introduced the fracture analysis by applying the cohesive elements in the numerical model of the nickel-coated polymer particle and further simulating the cracks initiation and propagation in the nickel coating during the ACA bonding. The simulation results showed that the stress distribution on the nickel-coated particle with cracks was significantly different from that on the nickel-coated particle without crack, indicating that the stress analysis by taking the crack into consideration is very important for the reliability assessment of the ACA interconnection. The stress analysis of cohesive elements indicated that the cracks initiated at the central area of the nickel coating and propagated to the polar area. Furthermore, by the introduction of a new parameter of the virtual resistance, a mathematical model was established to describe the electrical characteristics of the nickel-coated particle with cracks. The particle resistance of the nickel-coated particle with cracks was found to be much higher than that of the particle without crack in the optimized bonding pressure range, indicating that it is necessary to take the crack into consideration for the particle conduction analysis as well. Therefore, the fracture analysis on the conductive particle by taking the crack into consideration could accurately evaluate the reliability of ACA interconnection and avoid serious reliability issues.     

10?30 GHz monolithic GaAs travelling-wave divider/combiner

A four-way monolithic GaAs travelling-wave power divider/combiner has been designed, fabricated and evaluated. With a design centre frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.     

Shape transition from InAs quantum dash to quantum dot on InP(3 1 1)A

We report on the shape transition from InAs quantum dashes to quantum dots (QDs) on lattice-matched GaInAsP on InP(3 1 1)A substrates. InAs quantum dashes develop during chemical-beam epitaxy of 3.2 monolayers InAs, which transform into round InAs QDs by introducing a growth interruption without arsenic flux after InAs deposition. The shape transition is solely attributed to surface properties, i.e., increase of the surface energy and symmetry under arsenic deficient conditions. The round QD shape is maintained during subsequent GaInAsP overgrowth because the reversed shape transition from dot to dash is kinetically hindered by the decreased ad-atom diffusion under arsenic flux.     

Programmable group-delay module using binary polarization switching

We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.     

Numerical study of simultaneous natural convection heat transfer from both surfaces of a uniformly heated thin plate with arbitrary inclination

 Numerical studies were conducted to investigate the natural convection heat transfer around a uniformly heated thin plate with arbitrary inclination in an infinite space. The numerical approach was based on the finite volume technique with a nonstaggered grid arrangement. For handling the pressure–velocity coupling the SIMPLE-algorithm was used. QUICK scheme and first order upwind scheme were employed for discretization of the momentum and energy convective terms respectively. Plate width and heating rate were used to vary the modified Rayleigh number over the range of 4.8×10⁶ to 1.87×10⁸. Local and average heat transfer characteristics were compared with regarding to the inclination angle. The empirical expressions for local and average Nusselt number were correlated. It has been found that for inclination angle less than 10^∘, the flow and heat transfer characteristics are complicated and the average Nusselt number can not be correlated by one equation while for inclination angle larger than 10^∘, the average Nusselt number can be correlated into an elegant correlation. Received on 18 April 2001 / Published online: 29 November 2001     

Influence of preparation methods on structure and properties of PA6/PA66 blends: A comparison of melt‐mixing and in situ blending

The blends composed of polyamide 6 (PA6) and polyamide 66 (PA66) were obtained using two different preparation methods, one of which was the melt‐mixing through a twin‐screw extruder and the subsequent injection molding; and the other, the in situ blending through anionic polymerization of ε‐caprolactam in the presence of PA66. For the former, there existed a remarkable improvement in toughness but a drastic drop in strength and modulus; however, for the latter, a reverse but less significant trend of mechanical properties change appeared. Various characterizations were conducted, including the analyses of crystalline morphology, crystallographic form, and crystallization and melting behaviors using polarized optical microscopy (POM), wide‐angle X‐ray diffraction (WAXD), and differential scanning calorimetry (DSC), respectively; observation of morphology of fractured surface with scanning electron microscope (SEM); measurement of glass transition through dynamic mechanical analysis (DMA); and the intermolecular interaction as well as the interchange reaction between the two components by Fourier transform infrared spectrometry (FT‐IR) and ¹³C solution NMR. The presence and absence of interchange reaction was verified for the in situ and melt‐mixed blends, respectively. It is believed that the transreaction resulted in a drop in glass transition temperature (T_g) for the in situ blends, contrary to an increase of T_g with increasing PA66 content for the melt‐mixed ones. And the two kinds of fabrication methods led to significant differences in the crystallographic form, spherulite size and crystalline content and perfection as well. Accordingly, it is attempted to explain the reasons for the opposite trends of changes in the mechanical properties for these two blends. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1176–1186, 2007