<Emphasis Type="Italic">Ab Initio</Emphasis> Studies of Hydrogen Defects in CdTe

Using first-principles calculations based on density functional theory, we have investigated the nature of H defects in CdTe. The formation energy calculations indicate that the ground state position of the H inside the CdTe lattice depends on charge state: the lowest energy position for H⁰ and H⁺ is at the bond center site, while H⁻ prefers the tetrahedral interstitial site with Cd nearest neighbors (T_Cd). We find that H in CdTe acts as an amphoteric impurity. In p-type samples, H is in a positive charge state, acting as a donor to neutralize the free holes in the valence band, and in n-type samples H acquires an electron, compensating the donors in the sample.     

Capacity and SER Analysis of MIMO MRC Systems in an Interference-Limited Environment

The effect of co-channel interference (CCI) is considered in multiple-input multiple-output (MIMO) systems employing maximal ratio combining (MRC) under independent and identically distributed Rayleigh fading. Closed-form capacity and symbol error rate expressions are presented to evaluate the performance without any numerical integrations or statistical simulations. The analytical results are compared with Monte Carlo simulations and the good agreement is obtained.

Effects of Ball-Milling Atmosphere on the Thermoelectric Properties of TAGS-85 Compounds

Inspired by the high ZT value lately attained in Ar-protected ball-milled nanocrystalline p-BiSbTe bulk alloy, we report herein an investigation of the effects of ball-milling atmosphere on the thermoelectric (TE) properties of the traditional TE material (GeTe)₈₅(AgSbTe₂)₁₅ (TAGS-85). TAGS-85 samples were prepared via a melting–quenching–annealing process, and then ball-milled in different atmospheres and subsequently densified using a spark plasma sintering technique. The Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient were measured as a function of temperature from 10 K to 310 K. It was found that different ball-milling atmospheres, i.e., air, liquid N₂ (LN₂), and Ar, profoundly affected the TE properties. A state-of-the-art figure of merit ZT ≈ 0.30 was attained at 310 K in the Ar-ball milled sample. The results are discussed in terms of the carrier concentration, mobility, crystallinity, and the grain boundary scattering.     

Three-Stage Thin-Film Superlattice Thermoelectric Multistage Microcoolers with a Δ<Emphasis Type="Italic">T</Emphasis><Subscript>max</Subscript> of 102 K

Thin-film Bi₂Te₃- and Sb₂Te₃-based superlattice (SL) thermoelectric (TE) devices are an enabling technology for high-power and low-temperature applications, which include low-noise amplifier cooling, electronics hot-spot cooling, radio frequency (RF) amplifier thermal management, and direct sensor cooling. Bulk TE devices, which can pump heat loads on the order of 10 W/cm², are not suitable in these applications due to their large size and low heat pumping capacity. Recently, we have demonstrated an external maximum temperature difference, ΔT _max, as high as 58 K in an SL thin-film p–n couple. This state-of-the-art couple exhibited a cold-side minimum temperature, T _cmin, of −30.9°C. We regularly attain ΔT _max values in excess of 53 K, in spite of the many significant electrical and thermal parasitics that are unique to thin-film devices. These measurements do not use any complex thermal management at the heat sink to remove the heat flux from the TE device’s hot side. We describe here multistage SL cooling technologies currently being developed at RTI that can provide useful microcooling cold-side temperatures of 200 K. This effort includes a three-stage module employing independently powered stages which produced a ΔT _max of 101.6 K with a T _cmin of −75°C, as well as a novel two-wire three-stage SL cascade which demonstrated a T _cmin of −46°C and a ΔT _max of nearly 74 K. These RTI modules are only 2.5 mm thick, significantly thinner than a similar commercial three-stage module (5.3 mm thick) that produces a ΔT _max of 96 K. In addition, TE coolers fabricated from these thin-film SL materials perform significantly better than the extrapolated performance of similar thickness bulk alloy materials.     

A successive transmission medium access scheme with dynamic contention window for VLC system with saturated traffic

The visible light communication (VLC) network is usually relatively small scale and can provide high-data-rate information transmission, where multiple users get access to the network according to the carrier sense multiple access with collision avoidance (CSMA/CA) mechanism specified by IEEE 802.15.7 standard. In this paper, we propose a novel dynamic contention window with successive transmission (DCW-ST) scheme to improve the performance of this channel access mechanism and to achieve better network throughput without delay performance degradation. Specifically, we propose to adjust the contention window dynamically to adapt to the time-changing network size. Further, we derive the contention window size to achieve trade-off of throughput and delay, and the minimum contention window size required for the throughput enhancement. In addition, in order to further improve the delay performance, we present a successive transmission scheme that allows the nodes which have completed one transmission successfully to get the chance of transmitting information successively according to the network condition. Simulations are performed for the VLC system in saturated traffic and compared with the theoretical performances, which demonstrate that our proposed scheme outperforms the legacy CSMA/CA of IEEE 802.15.7.     

Analytical formulation of transient oscillation amplitude in rotary traveling wave oscillators

This paper presents an accurate analysis for deriving transient oscillation amplitude of Rotary Traveling Wave Oscillators (RTWOs) as a transmission-line based and high frequency circuit. The procedure of the paper is based on considering the nonlinear behavior of negative transconductors that are used for loss compensation of the transmission line. Finally, a closed-form expression for the time-domain amplitude of the RTWOs is obtained. The proposed useful and accurate expression could be used for designing the RTWOs for high performance-high speed systems. Also, it enables us to analyze and synthesize the oscillators with the desired transient behavior. This aspect of the RTWOs is not studied in previous works. The proposed theoretical results are then compared with accurate simulations. Simulations have been done in 0.18 μm CMOS technology with 1.8 V supply voltage. Results show less than 10% difference in steady state oscillation amplitude of theoretical expression and simulations. Considering the nonlinear equation of the RTWOs amplitude, complicated type of solving, simplifications and its numerical solution, the proposed derived expression has a good agreement with simulations.     

Design of efficient power amplifier for low power transmitters

This paper presents a fully integrated, low transmit-power and high-efficiency 2.4 GHz class-E power amplifier (PA) in TSMC 0.18 μm CMOS process for low-power transmitters such as wireless sensor networks (WSN). In this paper, a new output load has been proposed. Also, analytical design equations have been included to design an efficient low power circuit. This PA, employs the pad capacitance and bond-wire inductance of the output node, for satisfying class-E zero-voltage switching (ZVS) condition and matching the antenna’s 50 Ω resistance. By using bond-wire inductance instead of inductor in the output filter, smaller chip size and higher efficiency has been achieved compared to other works for low transmit-power applications. Also, the effectiveness of bulk-drive technique on faster switching and increasing efficiency have been evaluated. It has been proved that this technique leads to increase the efficiency of switching PAs. This PA delivers a range of output power from 2.7 to 7.2 dBm with a supply voltage range from 500 to 850 mV while achieving overall power efficiency range of 57.3–60.7%.     

Thermo-Mechanical Stress in High-Frequency Vacuum Electron Devices

Analysis of the thermo-mechanical performance of high-frequency vacuum electron devices is essential to the advancement of RF sources towards high-power generation. Operation in an ultra-high vacuum environment, space restricting magnetic focusing, and limited material options are just some of the constraints that complicate thermal management in a high-power VED. An analytical method for evaluating temperature, stress, and deformation distribution in thin vacuum-to-cooling walls is presented, accounting for anisotropic material properties. Thin plate geometry is used and analytical expressions are developed for thermo-mechanical analysis that includes the microstructure effects of grain orientations. The method presented evaluates the maximum allowable heat flux that can be used to establish the power-handling limitation of high-frequency VEDs prior to full-scale design, accelerating time-to-manufacture.     

High Efficiency and Wideband 300 GHz Frequency Doubler Based on Six Schottky Diodes

A high efficiency and wideband 300 GHz frequency doubler based on six Schottky diodes is presented in this paper. This balanced doubler features a compact and robust circuit on a 5-μm-thick, 0.36-mm-wide, and 1-mm-long GaAs membrane, fabricated by LERMA-C2N Schottky process. The conversion efficiency is mainly better than 16% across the wide bandwidth of 266–336 GHz (3 dB fractional bandwidth of 24%) when pumping with 20–60 mW input power (P _in) at the room temperature. A peak output power of 14.75 mW at 332 GHz with a 61.18 mW P _in, an excellent peak efficiency of 30.5% at 314 GHz with 43.86 mW P _in and several frequency points with outstanding efficiency of higher than 25% are delivered. This doubler served as the second stage of the 600 GHz frequency multiplier chain is designed, fabricated, and measured. The performance of this 300 GHz doubler is highlighted comparing to the state-of-art terahertz frequency doublers.     

Engineering the Losses and Beam Divergence in Arrays of Patch Antenna Microcavities for Terahertz Sources

We perform a comprehensive study on the emission from finite arrays of patch antenna microcavities designed for the terahertz range by using a finite element method. The emission properties including quality factors, far-field pattern, and photon extraction efficiency are investigated for etched and non-etched structures as a function of the number of resonators, the dielectric layer thickness, and period of the array. In addition, the simulations are achieved for lossy and perfect metals and dielectric layers, allowing to extract the radiative and non-radiative contributions to the total quality factors of the arrays. Our study shows that this structure can be optimized to obtain low beam divergence (FWHM <10°) and photon extraction efficiencies >50% while keeping a strongly localized mode. These results show that the use of these microcavities would lead to efficient terahertz emitters with a low divergence vertical emission and engineered losses.