绝缘层上半导体多晶膜激光再结晶临界条件

从理论的角度分析了绝缘衬底对其上面半导体多晶膜激光熔化再结晶过程的影响, 发现低导热的绝缘层使产生固一液相变的临界激光功率有明显的降低.用喇曼光谱测量了激光再结晶SOI层中的应力. 应力的出现是多晶膜内曾经发生过固一液相的佐证.从这一思想出发, 对LPCVD方法制备的大量SOI 样品进行激光再结晶临界条件的研究, 证明了忽略绝缘层低热导影响的模型不能解释实验结果, 而经过修正的公式则可以较好地拟合实验结果, 关键词：     

Spectroscopic and Structural Study of the 1：2 Aluminium（Ⅲ） Complex of Quercetin

Complex formation between aluminium and quercetin（Q） in methanol was investigated by means of 27^Al solid-state, 13^C and 1^H NMR and MS（ESI）, UV and IR spectra. Formation of the 1：2 complex was favored in methanol relative to all other solvent and the predominant species observed of Al（Ⅲ） has a 1：2 stoichiometry. The fine structure of 1：2 aluminum complex of quercetin was that the aluminum central atom chelated with two quereetin molecules and two methoxyl groups between two five membered rings, its coordination is six, the chelated site was 3-hydroxy-4-carbonyl.     

Tight-binding method modelling of photonic crystal waveguides

We present here a tight-binding-like modelling of two-dimensional (2D) photonic crystals (PCs). Adopted from solid-state physics, the concept of generalized Wannier functions is used to construct a localized state basis that allows a parameter-free ab initio study of defects in PCs. We demonstrate here for a 2D triangular lattice of dielectric rods in air, the existence of this localized basis and the possibility to study large scale complex dielectric structures deviating from periodicity. Specific numerical simulations on a split waveguide embedded in this triangular lattice are performed, and they demonstrate the superiority of this method over plane wave based techniques.     

A high-pressure Raman and X-ray diffraction study of the perovskite SrCeO3

A high-pressure structural study of SrCeO₃ has been performed at room temperature by Raman spectroscopy and X-ray diffraction up to 32 and 45 GPa, respectively. A first-order reversible phase transition is observed at about 12 GPa in both techniques. A second weak structural change, taking place between 18 and 25 GPa, can be suspected from Raman data. The increase in the number of Raman bands and diffraction lines is an indication that the symmetry is lowered and the compound does not evolve towards the ideal cubic perovskite structure. A Rietveld analysis of X-ray data was performed for the low-pressure phase and the atomic positions and the cell lattice parameters variations are reported in this paper. The volume compressibility derived from Raman modes (5.6×10⁻¹² Pa⁻¹), involving mainly bond-stretching for each type of polyhedron, is found to be close to the one obtained from volume cell variations measured by X-ray diffraction (7.9×10⁻¹² Pa⁻¹).     

Possible evidence for a narrow isovectorB=2 resonance below pion production threshold

Some evidence is presented for a narrow peak at 1969±2 MeV (FWHM=9±2 MeV) in the missing mass spectrum of the³He(p, d) reaction, with 3 standard deviations. The nature of this state, the mass of which is below the NN threshold, is discussed in connection with structures found in other experiments.     

Polynomial decay rate for the dissipative wave equation

Using Fourier integral operators with special amplitude functions, we analyze the stabilization of the wave equation in a three-dimensional bounded domain on which exists a trapped ray bouncing up and down infinitely between two parallel parts of the boundary.     

Multitemporal passive microwave mapping in MACHYDRO'90

MACHYDR0'90 was an experiment conducted in Pennsylvania in 1990 to study the synergistic use of remote sensors in multitemporal hydrologic studies. As part of this mission the pushbroom microwave radiometer was flown and used to produce brightness temperature maps. Verification studies and vegetation algorithms for mixed land cover areas are described     

Analysis of tungsten and titanium migration during ESD contact burnout

A physical and chemical analysis of a machine model (MM) electrostatic discharge (ESD) failure in a silicon circuit was carried out. Focused ion beam (FIB) was used to make cross sections through the region of contact burnout. The resulting samples were analyzed using scanning electron microscopy (SEM) and two-dimensional (2-D) auger electron spectroscopic (AES) mapping. It is shown for the first time that both titanium (Ti) and tungsten (W) migrated throughout the melted silicon filament. Large pellets of the W plug were embedded in the bulk silicon but only on the cathode side of the junction. Mechanisms are discussed to explain these phenomena. These involve the melting of titanium disilicide (TiSi/sub 2/), dissolution of Ti and W in the molten silicon and the formation of W pellets through electromigration at temperatures below /spl sim/1800 K.     

Highly integrated direct conversion receiver for GSM/GPRS/EDGE with on-chip 84-dB dynamic range continuous-time /spl Sigma//spl Delta/ ADC

This paper describes a highly digitized direct conversion receiver of a single-chip quadruple-band RF transceiver that meets GSM/GPRS and EDGE requirements. The chip uses an advanced 0.25-/spl mu/m BiCMOS technology. The I and Q on-chip fifth-order single-bit continuous-time sigma-delta (/spl Sigma//spl Delta/) ADC has 84-dB dynamic range over a total bandwidth of /spl plusmn/135 kHz for an active area of 0.4 mm/sup 2/. Hence, most of the channel filtering is realized in a CMOS IC where digital processing is achieved at a lower cost. The systematic analysis of dc offset at each stage of the design enables to perform the dc offset cancellation loop in the digital domain as well. The receiver operates at 2.7 V with a current consumption of 75 mA. A first-order substrate coupling analysis enables to optimize the floor plan strategy. As a result, the receiver has an area of 1.8 mm/sup 2/.