首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   134378篇
  免费   10859篇
  国内免费   8059篇
化学   66621篇
晶体学   1524篇
力学   6536篇
综合类   450篇
数学   13395篇
物理学   39730篇
无线电   25040篇
  2023年   1802篇
  2022年   2818篇
  2021年   3522篇
  2020年   3687篇
  2019年   3853篇
  2018年   4099篇
  2017年   4124篇
  2016年   4999篇
  2015年   4127篇
  2014年   5581篇
  2013年   7341篇
  2012年   7934篇
  2011年   8070篇
  2010年   6366篇
  2009年   6656篇
  2008年   6867篇
  2007年   6310篇
  2006年   5833篇
  2005年   5179篇
  2004年   4292篇
  2003年   3832篇
  2002年   3841篇
  2001年   3400篇
  2000年   2714篇
  1999年   2299篇
  1998年   2062篇
  1997年   1810篇
  1996年   1702篇
  1995年   1411篇
  1994年   1415篇
  1993年   1351篇
  1992年   1286篇
  1991年   1279篇
  1990年   1244篇
  1989年   1118篇
  1988年   978篇
  1987年   972篇
  1986年   923篇
  1985年   957篇
  1984年   940篇
  1983年   852篇
  1982年   813篇
  1979年   816篇
  1978年   818篇
  1977年   818篇
  1976年   922篇
  1975年   819篇
  1974年   849篇
  1973年   850篇
  1972年   756篇
排序方式: 共有10000条查询结果,搜索用时 21 毫秒
11.
Knyazev  Yu. V.  Kazak  N. V.  Gavrichkov  V. A.  Polukeev  S. I.  Ovchinnikov  S. G. 《JETP Letters》2022,116(8):567-573
JETP Letters - Changes in the magnetic properties of FeBO3 single crystals in the course of spin crossover occurring with increasing pressure up to 63 GPa are studied both experimentally and...  相似文献   
12.
王笑楠  李光  钟华森  刘云飞  周瑜 《电声技术》2021,45(11):21-25,32
人工智能的普及促进了语音交互技术的发展,语音传感器阵列作为智能语音交互的硬件前端,成为语音交互领域的前沿研究方向.矢量语音传声器自有的偶极子指向性、零点深度以及阵列体积小便于集成的特点特别符合语音交互技术对硬件设备的要求.基于此,通过采用两组矢量敏感单元"共点正交"形成矢量微阵列实现声源空间锐化波束指向,其不受瑞利限与空间采样率限制,与传统空间离散分布的声压麦克风阵列有着本质区别,是矢量微阵列的核心优势所在.矢量微阵列传声器弥补了现有双麦阵列的不足,具有更为广阔的应用前景,作为智能语音交互的硬件前端,对推动智能语音交互领域的发展具有重要意义.  相似文献   
13.
Three nonfused ring electron acceptors (NFREAs) TTC6,TT-C8T and TT-TC8 were purposefully designed and synthesized.The molecular geometry can be adjusted by the steric hindrance of lateral substituents.According to the DFT calculations,from TTC6 to TT-C8T and TT-TC8,planarity of the molecular backbone is gradually improved,accompanying with the enhancing of intramolecular charge transfer effect.As for TT-TC8,the two phenyl substituents are almost perpendicular to the molecular backbone,which endues the acceptor with good solubility and suppresses it to form over-aggregation.Multidirectional regular molecular orientation and closer molecular stacking are formed in TT-TC8 film.As a result,TT-TC8 based devices afford the highest PCE of 13.13%,which is much higher than that of TTC6 (4.41%) and TT-C8T (10.42%) and among the highest PCE values based on NFREAs.  相似文献   
14.
Journal of Communications Technology and Electronics - A new design of wavelets based on the convolution of a compactly supported function with a rectangular pulse is proposed and theoretically...  相似文献   
15.
16.
Mercury, lead, and cadmium are among the most toxic and carcinogenic heavy metal ions (HMIs), posing serious threats to the sustainability of aquatic ecosystems and public health. There is an urgent need to remove these ions from water by a cheap but green process. Traditional methods have insufficient removal efficiency and reusability. Structurally robust, large surface-area adsorbents functionalized with high-selectivity affinity to HMIs are attractive filter materials. Here, an adsorbent prepared by vulcanization of polyacrylonitrile (PAN), a nitrogen-rich polymer, is reported, giving rise to PAN-S nanoparticles with cyclic π-conjugated backbone and electronic conductivity. PAN-S can be coated on ultra-robust melamine (ML) foam by simple dipping and drying. In agreement with hard/soft acid/base theory, N- and S-containing soft Lewis bases have strong binding to Hg2+, Pb2+, Cu2+, and Cd2+, with extraordinary capture efficiency and performance stability. Furthermore, the used filters, when collected and electrochemically biased in a recycling bath, can release the HMIs into the bath and electrodeposit on the counter-electrode as metallic Hg0, Pb0, Cu0, and Cd0, and the PAN-S@ML filter can then be reused at least 6 times as new. The electronically conductive PAN-S@ML filter can be fabricated cheaply and holds promise for scale-up applications.  相似文献   
17.
Lithium (Li) metal, as an appealing candidate for the next-generation of high-energy-density batteries, is plagued by its safety issue mainly caused by uncontrolled dendrite growth and infinite volume expansion. Developing new materials that can improve the performance of Li-metal anode is one of the urgent tasks. Herein, a new MXene derivative containing pure rutile TiO2 and N-doped carbon prepared by heat-treating MXene under a mixing gas, exhibiting high chemical activity in molten Li, is reported. The lithiation MXene derivative with a hybrid of LiTiO2-Li3N-C and Li offers outstanding electrochemical properties. The symmetrical cell assembling lithiation MXene derivative hybrid anode exhibits an ultra-long cycle lifespan of 2000 h with an overpotential of ≈30 mV at 1 mA cm−2, which overwhelms Li-based anodes reported so far. Additionally, long-term operations of 34, 350, and 500 h at 10 mA cm−2 can be achieved in symmetrical cells at temperatures of −10, 25, and 50 °C, respectively. Both experimental tests and density functional theory calculations confirm that the LiTiO2-Li3N-C skeleton serves as a promising host for Li infusion by alleviating volume variation. Simultaneously, the superlithiophilic interphase of Li3N guides Li deposition along the LiTiO2-Li3N-C skeleton to avoid dendrite growth.  相似文献   
18.
Theoretical and Mathematical Physics - We consider three one-dimensional superconducting structures: 1) the one with $$p$$ -wave superconductivity; 2) the main experimental model of a nanowire with...  相似文献   
19.
Utilizing inner-crystal piezoelectric polarization charges to control carrier transport across a metal-semiconductor or semiconductor–semiconductor interface, piezotronic effect has great potential applications in smart micro/nano-electromechanical system (MEMS/NEMS), human-machine interfacing, and nanorobotics. However, current research on piezotronics has mainly focused on systems with only one or rather limited interfaces. Here, the statistical piezotronic effect is reported in ZnO bulk composited of nanoplatelets, of which the strain/stress-induced piezo-potential at the crystals’ interfaces can effectively gate the electrical transport of ZnO bulk. It is a statistical phenomenon of piezotronic modification of large numbers of interfaces, and the crystal orientation of inner ZnO nanoplatelets strongly influence the transport property of ZnO bulk. With optimum preferred orientation of ZnO nanoplatelets, the bulk exhibits an increased conductivity with decreasing stress at a high pressure range of 200–400 MPa, which has not been observed previously in bulk. A maximum sensitivity of 1.149 µS m−1 MPa−1 and a corresponding gauge factor of 467–589 have been achieved. As a statistical phenomenon of many piezotronic interfaces modulation, the proposed statistical piezotronic effect extends the connotation of piezotronics and promotes its practical applications in intelligent sensing.  相似文献   
20.
Recently, the successful synthesis of wafer-scale single-crystal graphene, hexagonal boron nitride (hBN), and MoS2 on transition metal surfaces with step edges boosted the research interests in synthesizing wafer-scale 2D single crystals on high-index substrate surfaces. Here, using hBN growth on high-index Cu surfaces as an example, a systematic theoretical study to understand the epitaxial growth of 2D materials on various high-index surfaces is performed. It is revealed that hBN orientation on a high-index surface is highly dependent on the alignment of the step edges of the surface as well as the surface roughness. On an ideal high-index surface, well-aligned hBN islands can be easily achieved, whereas curved step edges on a rough surface can lead to the alignment of hBN along with different directions. This study shows that high-index surfaces with a large step density are robust for templating the epitaxial growth of 2D single crystals due to their large tolerance for surface roughness and provides a general guideline for the epitaxial growth of various 2D single crystals.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号