Opposite-channel-based charge injection in SOI MOSFET's under hotcarrier stress

By operating one channel of a typical SOI MOSFET in avalanche while keeping the opposite channel accumulated, charge injection into the opposite gate takes place. Three independent experiments are described that demonstrate the occurrence of this opposite-channel based charge injection. The experimental results are in agreement with PISCES numerical simulations     

Performance implications of the thermal-induced frequency drift infast wavelength switched systems with heterodyne detection

The frequency modulation response and tuning dynamics of a two-section DFB laser are determined by carrier and thermal modulation of the active layer refractive index. In response to a step change in the injection current for switching between channels in a wavelength division multiplexed system, the optical frequency changes rapidly due to the carrier effect, and then slowly drifts toward a steady state value due to the thermal effect. For wavelength switched applications with heterodyne detection, the drifting of the optical frequency broadens the spectrum of the IF signal and may impose a limit on the time that the signal remains within the IF passband (residency time). The IF spectral broadening and residency time are investigated theoretically and experimentally. Based upon a minimum mean square error fit between experimental and theoretical FM responses, the dependence of the spectral broadening and residency time on the bias condition of the laser and the optical frequency switching interval is characterized     

Evaluation of atomic fluorescence, absorption and emission techniques for the determination of mercury

Summary Atomic fluorescence (AFS), absorption (AAS) and emission (AES) systems were evaluated for the determination of inorganic mercury. Identical vapour generation and amalgamation procedures were used to permit direct comparison of the performance of a commercial long-path AAS instrument to laboratory constructed non-dispersive AFS as well as He-MIP based AES instruments. Instrumental noise-limited detection limits (LOD) were 0.94, 2.4, 2.8 pg for AAS, AES and AFS techniques, respectively. Methodological LOD's were found to be blank controlled and similar for all three instruments, viz. 9, 25 and 16 pg for AAS, AFS and AES, respectively. All three systems produced accurate results at the low ng/l concentration, as verified by the analysis of a certified river water reference material (NRCC ORMS-1).     

The electron microscopy of post-growth induced defects of ZnSe/GaAs epilayers

A fundamental research of structural defects induced upon post-growth processing of ZnSe/GaAs epilayers grown on (100) GaAs was done by identifying defect-related reflections in the transmission electron diffraction (TED) patterns of ZnSe. Structural artifacts, other than the as-grown defects, on this material system could be excluded according to our results. Four types of abnormal reflections have been observed in addition to primary reflections. These extra reflections are sensitive to the post-growth processing of ZnSe epilayers and may arise from various external effects, rather than epitaxy growth, such as irradiation damage, surface oxidation, and surface contamination. By mapping these reflections at several major zone axes using TED patterns, we found that the reciprocal lattice for a ZnSe crystal with structural defects consists of two distinct types of extra reflections associated with irradiation damage. The first type of extra reflections is ±1/3{111} and the other is ±1/2{111} corresponding to pure-edge and non-edge dislocation loops, respectively. For (100) oriented wafers, the ±1/3{111} and ±1/2{111} reflections were observed only on two of the four possible 〈111〉 variants (i.e. [111]_Zn and [111]_Zn)and this phenomenon was attributed to the anisotropy of defect distribution. Extra reflections associated with surface oxidation and contamination are also observed. The orientation relationships between a surface hexagonal ZnO and a cubic ZnSe film are [0001]_ZnO//[−111]_ZnSe, and [01−11]_ZnO//[011]_ZnSe. The origin, characterization, and elimination of these induced reflections are discussed. With the knowledge about these extra effects on structural defect formation, we have shown the real microstructure of ZnSe epilayers.     

A new set of high speed matrix addressing schemes for ferroelectric liquid crystal displays

A new set of matrix addressing schemes for ferroelectric liquid crystal displays is reported. The schemes use the minimum in the response time-voltage characteristic found in certain mixtures and deliver improved operating speed and contrast ratio compared with previously reported schemes operating in this mode.     

Active antenna array lumped ring configuration

Coupled active antenna oscillator arrays are used for power-combining at microwave and millimeter-wave frequencies. It is known that the relative phase determined by the element separation distance ultimately determines the array operational mode and, hence, far-field radiation characteristics. Separately, it is known that coupled oscillator modal stability is achieved by coupling oscillators through lumped capacitive elements. In this paper, an arrangement whereby lumped capacitive elements (placed across the oscillator loads) and radiative coupling are employed concurrently is investigated. The arrangement takes the form of a ring of coupled oscillators used to excite a 2×2 antenna array. The effect that these couplings have on array behavior are evaluated using time-domain analysis and analytically derived equations. Experimental results for far-field radiation patterns are discussed in relation to coupled oscillator dynamical behavior. These suggest that the theoretical predictions are valid, offering a robust design tool for studies of larger power-combining arrays     

Pre-illumination to control the active trap density in asemi-insulating MQW device

The trap density in a photorefractive semi-insulating quantum-well (QW) device can be dynamically adjusted for optimum sensitivity by passivating some of its traps with photocarriers from a pre-illumination pulse. By reducing the effective trap density with pre-illumination, we demonstrate that the carrier drift length can increase, causing more than an order of magnitude increase in device sensitivity by increasing the number of QW's screened per carrier. Too much pre-illumination, on the other hand, decreases four-wave mixing diffraction efficiency, due to lateral drift. The optimum trap density enables higher sensitivity while maintaining high-resolution operation. Pre-illumination can also be used to speed up grating erasure by increasing the electron-hole recombination probability     

Noise figure of saturated 1310-nm polarization insensitive multiple-quantum-well optical amplifiers

The noise figure degradation due to saturation by amplified spontaneous emission of high-gain 1310-nm polarization insensitive multiple-quantum-well optical amplifiers has been investigated systematically by studying amplifiers of different lengths. It is found that the intrinsic noise figure of 4 dB of a device with 20-dB single-pass gain is degraded to about 5 dB for a device having 36-dB single-pass gain. This degradation in noise figure is very modest, compared to results reported earlier for semiconductor optical amplifiers with bulk-gain media, illustrating the benefits of using a quantum-well gain medium in semiconductor optical amplifiers.     

Structural study of degraded ZnMgSSe blue light emitters

Using electroluminescence (EL) topography and transmission electron microscopy (TEM), we investigated the nonluminescent regions which form while current is being injected into ZnMgSSe/ZnSSe/ZnCdSe-based blue light emitters. Small dark spots were observed just after turn-on and spread out forming rough nonluminescent triangles in the <100> directions in the EL image of the active region. TEM studies showed that the small dark spots are pre-existing stacking faults originating at the substrate/epitaxial layer interface. The nonluminescent triangles were found to be a dense region of dislocation dipoles and dislocation loops. Each dipole was aligned along two <110> directions in the {111} planes. The Burgers vectors were of the type a/2<011> inclined at 45° to the (001) junction plane.