A note on an approximate lagrange multiplier rule

In this note we show that for a large class of optimization problems, the Lagrange multiplier rule can be derived from the approximate multiplier rule.     

The electrical behavior of nitro oligo(phenylene ethynylene)’s in pure and mixed monolayers

In order to realize molecular electronic devices, molecules with electrically interesting behavior must be identified. One molecule that has potential for use in devices is an oligo(phenylene ethynylene) (OPE) molecule with nitro sidegroup(s). These “nitro” molecules have been reported to show electrical switching with memory behavior, as well as negative differential resistance (NDR). However, different research groups testing the nitro molecules in different test beds have observed different electrical behaviors. In this work, we assembled two different nitro monolayers: one completely composed of nitro molecules and the second a mixed matrix where nitro molecules were separated by dodecanethiol molecules. We used scanning tunneling microscopy to image each of the monolayers and observed that the nitro molecules were effectively inserted into the ordered dodecanethiol monolayer. We tested the electrical behavior of the pure monolayer, as well as the mixed monolayer, in our nanowell test device. The nanowell devices were fabricated on micron-size gold lines patterned on oxide-coated silicon wafers. The gold lines were covered with a silicon dioxide layer, through which a nanometer size well was milled. This nanowell device was filled with a self-assembling monolayer of organic molecules, and capped with titanium and gold. The nanowell electrical results showed switching with memory for the pure nitro monolayer, but not for the mixed monolayer. This switching behavior consisted of a molecule starting in a high conductivity state and switching to a low conductivity state upon application of a threshold voltage. The high conductivity state could only be returned by application of an opposite threshold voltage.     

Energy and congestion aware routing based on hybrid gradient fields for wireless sensor networks

Wireless Networks - The principles of physics and system sciences are increasingly used in the field of network engineering to design network protocols. This work proposes an energy and congestion...     

An Analytical Model for LoS Probability and Area Transport Efficiency of Millimeter Wave Cellular Network

Wireless Personal Communications - Millimeter wave based small cell deployment is a promising technique for the evolution of fifth generation (5G) cellular network. This paper investigates coverage...     

Revisiting parallel car parking problem

Among many physical and mechanical engineering problems, parallel car parking has drawn the attention of many researchers as it shows how methods of Lie algebra and differential geometry can be applied elegantly to explain the behavior of such a system. In this paper we have reviewed some aspects of this problem in this context and analyse the stability and controllability of such a system by some unconventional integrators like Kahan and Lie trotter integrator. At the same time we have also given the results obtained through conventional Runge Kutta integrator to see a comparison.     

10Be measurements at IUAC-AMS facility

An accelerator mass spectrometry (AMS) facility for measurements of ¹⁰Be has been developed by upgrading the 15UD Pelletron accelerator at Inter-University Accelerator Centre (IUAC), New Delhi. Details of the up gradation of the facilities and the measurement procedure are described briefly. Chemical processing for the separation of ¹⁰Be from manganese nodules and results of recent experiments on ¹⁰Be are presented.     

A reliable ground bounce noise reduction technique for nanoscale CMOS circuits

Power gating is the most effective method to reduce the standby leakage power by adding header/footer high-V_TH sleep transistors between actual and virtual power/ground rails. When a power gating circuit transitions from sleep mode to active mode, a large instantaneous charge current flows through the sleep transistors. Ground bounce noise (GBN) is the high voltage fluctuation on real ground rail during sleep mode to active mode transitions of power gating circuits. GBN disturbs the logic states of internal nodes of circuits. A novel and reliable power gating structure is proposed in this article to reduce the problem of GBN. The proposed structure contains low-V_TH transistors in place of high-V_TH footer. The proposed power gating structure not only reduces the GBN but also improves other performance metrics. A large mitigation of leakage power in both modes eliminates the need of high-V_TH transistors. A comprehensive and comparative evaluation of proposed technique is presented in this article for a chain of 5-CMOS inverters. The simulation results are compared to other well-known GBN reduction circuit techniques at 22 nm predictive technology model (PTM) bulk CMOS model using HSPICE tool. Robustness against process, voltage and temperature (PVT) variations is estimated through Monte-Carlo simulations.     

INDEP approach for leakage reduction in nanoscale CMOS circuits

Complementary metal oxide semiconductor (CMOS) technology scaling for improving speed and functionality turns leakage power one of the major concerns for nanoscale circuits design. The minimization of leakage power is a rising challenge for the design of the existing and future nanoscale CMOS circuits. This paper presents a novel, input-dependent, transistor-level, low leakage and reliable INput DEPendent (INDEP) approach for nanoscale CMOS circuits. INDEP approach is based on Boolean logic calculations for the input signals of the extra inserted transistors within the logic circuit. The gate terminals of extra inserted transistors depend on the primary input combinations of the logic circuits. The appropriate selection of input gate voltages of INDEP transistors are reducing the leakage current efficiently along with rail to rail output voltage swing. The important characteristic of INDEP approach is that it works well in both active as well as standby modes of the circuits. This approach overcomes the limitations created by the prevalent current leakage reduction techniques. The simulation results indicate that INDEP approach mitigates 41.6% and 35% leakage power for 1-bit full adder and ISCAS-85 c17 benchmark circuit, respectively, at 32 nm bulk CMOS technology node.     

Study of 10Be in the sediments from the Krossfjorden and Kongsfjorden Fjord System,Svalbard

The distribution of ¹⁰Be, as well as the major elements concentrations and the grain size in surface and core sediment samples, collected from Krossfjorden and Kongsfjorden, Svalbard have been studied for understanding the origin of ¹⁰Be and an estimation of its accumulation rate. The ¹⁰Be concentration in sediments varies between 0.90 × 10⁸ and 2.53 × 10⁸ atoms g^?1. Our results show that atmospherically produced ¹⁰Be dominates over terrigenous (in situ) sources of ¹⁰Be in the studied samples. The calculated ¹⁰Be accumulation rate varies from 3.1 × 10⁶ atoms cm^?2 year^?1 to 8.6 × 10⁶ atoms cm^?2 year^?1 which is higher than the accumulation rate observed in the deep sea sediment cores of the Arctic Ocean and the Norwegian Sea. The higher accumulation rate of ¹⁰Be is attributed to the higher influx of glacier melt water into the fjord system.     

On the convergence of sequence of maximal monotone operators of type (D) in Banach spaces

Positivity - Within the setting of general real Banach spaces, we prove that the sequence of maximal monotone operators of type (D) graphically converges provided, their corresponding class of...