首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   22980篇
  免费   4347篇
  国内免费   3530篇
化学   10421篇
晶体学   381篇
力学   1055篇
综合类   370篇
数学   2017篇
物理学   6080篇
无线电   10533篇
  2024年   83篇
  2023年   406篇
  2022年   767篇
  2021年   836篇
  2020年   878篇
  2019年   808篇
  2018年   754篇
  2017年   869篇
  2016年   911篇
  2015年   1270篇
  2014年   1461篇
  2013年   1799篇
  2012年   2063篇
  2011年   2070篇
  2010年   1844篇
  2009年   1870篇
  2008年   1874篇
  2007年   1749篇
  2006年   1627篇
  2005年   1390篇
  2004年   990篇
  2003年   754篇
  2002年   734篇
  2001年   628篇
  2000年   549篇
  1999年   335篇
  1998年   204篇
  1997年   153篇
  1996年   133篇
  1995年   135篇
  1994年   103篇
  1993年   128篇
  1992年   85篇
  1991年   66篇
  1990年   60篇
  1989年   48篇
  1988年   64篇
  1987年   22篇
  1986年   36篇
  1985年   27篇
  1984年   25篇
  1983年   24篇
  1982年   18篇
  1981年   12篇
  1980年   19篇
  1979年   26篇
  1978年   23篇
  1977年   9篇
  1973年   9篇
  1971年   10篇
排序方式: 共有10000条查询结果,搜索用时 296 毫秒
171.
The hyperfine structures and isotope shifts in some excited states of Yb and Tm have been measured using laser-atomic beam interaction, stepwise excitation and fluorescence detection techniques. From the experimental results, magnetic dipole hyperfine constants A and electric quadrupole hyperfine constants B have been derived. So for as we know, the A factor of [4f125d6s6p]9/2 level in Tm is given for the first time.  相似文献   
172.
本文讨论了在指数型寿命数据中,对同时存在的异常大数据和异常小数据的检验方法,给出了一个明确的判别标准,并以一例说明其应用。  相似文献   
173.
We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.  相似文献   
174.
激光沉积超导薄膜过程中出射粒子速度的飞行时间谱分析   总被引:1,自引:1,他引:0  
范永昌  安承武 《光学学报》1991,11(7):98-601
采用飞行时间谱技术,测量了准分子激光烧蚀沉积高温超导薄膜过程中,由靶面出射粒子的飞行速度。研究了粒子速度与充氧压及其激光能量密度的关系。讨论了高能粒子在薄膜原位低温外延生长中的作用。  相似文献   
175.
隆正文  刘波  李子平 《物理学报》2004,53(7):2094-2099
对约束系统量子化中Dirac方法和 Faddeev-Jackiw方法进行了讨论,并对它们的运动方程、正则量子化的等价性进行证明.找出了两种方法中约束的对应关系. 关键词: Faddeev-Jackiw方法 Dirac方法 约束系统 正则量子化  相似文献   
176.
首次提出一种利用光同步数字传送网的2.048Mbit/s信号传送高精度时间编码信号的方法和实验结果。它可以使整个通信网的交换机、计费系统、网管系统、基站控制器等设备实现与UTC的时间同步。目前的实验证明,时间同步的不确定度优于±5μs。  相似文献   
177.
We describe a novel "see-through" indium-tin-oxide contact on the n-side of a high power unstable resonator semiconductor laser (URSL) that allows direct observation of the cavity during high power operation. Under optimized annealing conditions this transparent ITO contact has a low enough specific contact resistivity to permit normal high power CW operation of the URSL and allows the observation of filamentation. This contact scheme is applicable to a wide range of semiconductor lasers and is especially appropriate for high power devices. The same structure can also be used to obtain a 2-D thermal map of the laser cavity.  相似文献   
178.
Ab initio energetic calculations based on the density functional theory (DFT) and projector augmented wave (PAW) pseudo-potentials method were performanced to determine the crystal structural parameters and phase transition data of the polymorphic rare-earth sesquioxides Ln2O3 (where Ln=La-Lu, Y, and Sc) with A-type (hexagonal) and B-type (monoclinic) configurations at ground state. The calculated results agree well with the limited experimental data and the critically assessed results. A set of systematic and self-consistent crystal structural parameters, energies and pressures of the phase transition were established for the whole series of the A- and B-type rare-earth sesquioxides Ln2O3. With the increase of the atomic number, the ionic radii of rare-earth elements Ln and the volumes of the sesquioxides Ln2O3 reflect the so-called “lanthanide contraction”. With the increase of the Ln3+-cation radius, the bulk modulus of Ln2O3 decreases and the polymorphic structures show a degenerative tendency.  相似文献   
179.
In this contribution, we demonstrate a new effective methodology for constructing highly efficient and durable poly(p‐phenyleneethynylene) (PPE) containing emissive material with nonaggregating and hole‐facilitating properties through the introduction of hole‐transporting blocks into the PPE system as the grafting coils as well as building the energy donor–acceptor architecture between the grafting coils and the PPE backbone. Poly(2‐(carbazol‐9‐yl)ethyl methacrylate) (PCzEMA), herein, is chosen as the hole‐transporting blocks, and incorporated into the PPE system as the grafting coils via atom transfer radical polymerization. The chemical structure of the resultant copolymer, PPE‐g‐PCzEMA, was characterized by NMR and gel permeation chromatography, showing that the desirable copolymer was obtained with the narrow polydispersity. The increased thermal stability of PPE‐g‐PCzEMA was confirmed by thermogravimetric analysis and differential scanning calorimetry along with its macroinitiator. The optoelectronic properties of this copolymer were studied in detail by ultraviolet‐visible absorption, photoluminescence emission and excitation spectra, and cyclic voltammogram (CV). The results indicate that PPE‐g‐PCzEMA exhibits the solid‐state luminescent property dominated by individual lumophores, and also the energy transfer process from the PCzEMA blocks to the PPE backbone with a relatively higher energy transfer efficiency in the solid‐state compared to that of the solution state. Additionally, the hole‐injection property is greatly facilitated due to the presence of PCzEMA, as confirmed by CV profiles. All these data indicate that PPE‐g‐PCzEMA is a good candidate for use in optoelectronic devices. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3776–3787, 2007  相似文献   
180.
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号