Multiterminal light-emitting logic device electricallyreprogrammable between OR and NAND functions

A monolithic multiterminal logic device that functions both optically and electrically as an ORNAND gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in an InGaAs/InAlAs/InGaAs heterostructure grown by molecular beam epitaxy. Excellent performance is obtained at room temperature. The collector current and the optical output power both exhibit the OR and the NAND functions of any two of the three input terminals, these functions being interchangeable by the voltage on the third terminal     

Optical detection of NO3 and NO2 in “pure” HNO3 vapor,the liquid-phase decomposition of HNO3

Flowing and static gas-phase samples of HNO₃ in O₂ and N₂ were analyzed by long-path ultraviolet/visible (UV/VIS) spectroscopy to reveal the presence of both NO₂ and NO₃, the concentrations of which were calculated using differential absorption cross sections. NO₂ is produced predominantly by the heterogeneous decomposition of HNO₃, whereas NO₃ is generated in the gas phase by the thermal decomposition of N₂O₅, a product of the self-disproportionation of liquid HNO₃. © 1993 John Wiley & Sons, Inc.     

Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

Wideband HEMT MMIC low-noise amplifier with temperaturecompensation

A wideband low-noise pseudomorphic HEMT MMIC variable-gain amplifier has been designed and fabricated. The amplifier has a nominal gain of 13 dB across the band 2-20 GHz, with gain flatness better than ±0.4 dB. The noise figure is less than 3 dB across the band 6-16 GHz. An on-chip temperature-sensing diode is used to provide a linear temperature correction which has been used to reduce the gain variation of the amplifier by a factor of 2 across the temperature range -50°C to +95°C     

Short-pulse, eye-safe Nd:YAG laser using cavity-dumping

A short-pulse 1.444-μm laser based on Nd:YAG technology has been demonstrated. The 1.444-μm is eye-safe. With the cavity-dump technique, a pulse of 50 m× and 14 ns was obtained. The beam quality was excellent with an M² of 1.6 by the use of a telescopic resonator. Silicon-window polarizers were used to suppress the 1.06-μm radiation but showed 1.444-μm absorption as well     

Second Quantization of the Stueckelberg Relativistic Quantum Theory and Associated Gauge Fields

The gauge compensation fields induced by the differential operators of the Stueckelberg-Schrödinger equation are discussed, as well as the relation between these fields and the standard Maxwell fields; An action is constructed and the second quantization of the fields carried out using a constraint procedure. The properties of the second quantized matter fields are discussed.     

Linear crosstalk in 4×4 semiconductor optical amplifier gateswitch matrix

We report a comprehensive crosstalk investigation of a packaged InGaAsP/InP 4×4 semiconductor optical amplifier gate switch matrix, experimentally as well as theoretically. For a fully loaded switch with the same wavelength on all four inputs, all possible switching combinations are analyzed, thus yielding realistic crosstalk figures. Coherent and incoherent crosstalk phenomena are identified, and a switch crosstalk less than -40 dB has been measured     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters     

Simplified 0.35-μm flash EEPROM process using high-temperatureoxide (HTO) deposited by LPCVD as interpoly dielectrics and peripheraltransistors gate oxide

A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O₂ anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs     

Evaluation of multicast routing algorithms for real-timecommunication on high-speed networks

Multicast (MC) routing algorithms capable of satisfying the quality of service (QoS) requirements of real-time applications will be essential for future high-speed networks. We compare the performance of all of the important MC routing algorithms when applied to networks with asymmetric link loads. Each algorithm is judged based on the quality of the MC trees it generates and its efficiency in managing the network resources. Simulation results over random networks show that unconstrained algorithms are not capable of fulfilling the QoS requirements of real-time applications in wide-area networks. Simulations also reveal that one of the unconstrained algorithms, reverse path multicasting (RPM), is quite inefficient when applied to asymmetric networks. We study how combining routing with resource reservation and admission control improves the RPM's efficiency in managing the network resources. The performance of one semiconstrained heuristic, MSC, three constrained Steiner tree (CST) heuristics, Kompella, Pasquale, and Polyzos (1992), constrained adaptive ordering (CAO), and bounded shortest multicast algorithm (BSMA), and one constrained shortest path tree (CSPT) heuristic, the constrained Dijkstra heuristic (CDKS) are also studied. Simulations show that the semiconstrained and constrained heuristics are capable of successfully constructing MC trees which satisfy the QoS requirements of real-time traffic. However, the cost performance of the heuristics varies. The BSMA's MC trees are lower in cost than all other constrained heuristics. Finally, we compare the execution times of all algorithms, unconstrained, semiconstrained, and constrained