全文获取类型
收费全文 | 399505篇 |
免费 | 22075篇 |
国内免费 | 14638篇 |
专业分类
化学 | 187113篇 |
晶体学 | 5144篇 |
力学 | 17570篇 |
综合类 | 535篇 |
数学 | 37280篇 |
物理学 | 119124篇 |
无线电 | 69452篇 |
出版年
2023年 | 3667篇 |
2022年 | 5273篇 |
2021年 | 7148篇 |
2020年 | 7200篇 |
2019年 | 7136篇 |
2018年 | 7117篇 |
2017年 | 6963篇 |
2016年 | 10232篇 |
2015年 | 8613篇 |
2014年 | 11794篇 |
2013年 | 20241篇 |
2012年 | 19198篇 |
2011年 | 21308篇 |
2010年 | 15207篇 |
2009年 | 15529篇 |
2008年 | 18266篇 |
2007年 | 17802篇 |
2006年 | 16784篇 |
2005年 | 15049篇 |
2004年 | 12541篇 |
2003年 | 10954篇 |
2002年 | 10503篇 |
2001年 | 10986篇 |
2000年 | 9180篇 |
1999年 | 8349篇 |
1998年 | 7325篇 |
1997年 | 6847篇 |
1996年 | 6815篇 |
1995年 | 5984篇 |
1994年 | 5795篇 |
1993年 | 5470篇 |
1992年 | 5398篇 |
1991年 | 5415篇 |
1990年 | 4857篇 |
1989年 | 4411篇 |
1988年 | 4252篇 |
1987年 | 3735篇 |
1986年 | 3599篇 |
1985年 | 4513篇 |
1984年 | 4646篇 |
1983年 | 3718篇 |
1982年 | 3814篇 |
1981年 | 3717篇 |
1980年 | 3560篇 |
1979年 | 3568篇 |
1978年 | 3647篇 |
1977年 | 3591篇 |
1976年 | 3662篇 |
1974年 | 3357篇 |
1973年 | 3399篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
41.
42.
对在实际组网中选择合理的ASON架构和保护方式作了相应分析,并为搭建可向ASON平滑演进的传统网络时需注意的问题提供了参考意见, 相似文献
43.
Some Insights into MIMO Mutual Information: The High SNR Case 总被引:1,自引:0,他引:1
Salo J. Suvikunnas P. El-Sallabi H.M. Vainikainen P. 《Wireless Communications, IEEE Transactions on》2006,5(11):2997-3001
We consider mutual information of multiple-input multiple-output (MIMO) wireless channels with complex isotropic Gaussian input in the case where the receiver has perfect channel, knowledge. For arbitrary fading statistics, a mutual information lower bound is decomposed in a sum of three terms involving: a) average SNR; b) channel fading; and c) a term characterizing the "effective rank", or eigenvalue dispersion, of the channel matrix. The decomposition suggests that spatial multiplexing efficiency of a MIMO channel can be characterized by the so-called ellipticity statistic. Distribution functions, means and variances of the random terms in the decomposition for the case of Rayleigh fading are also derived 相似文献
44.
Hao Wang Ying Lin Biao Chen 《Signal Processing, IEEE Transactions on》2003,51(10):2613-2623
We investigate non data-aided channel estimation for cyclically prefixed orthogonal frequency division multiplexing (OFDM) systems. By exploiting channel diversity using only two receive antennas, a blind deterministic algorithm is proposed. Identifiability conditions are derived that guarantee the perfect channel retrieval in the absence of noise. In the presence of noise, the proposed method has the desired property of being data efficient-only a single OFDM block is needed to achieve good estimation performance for a wide range of SNR values. The algorithm is also robust to input symbols as it does not have any restriction on the input symbols with regard to their constellation or their statistical properties. In addition, this diversity-based algorithm is computationally efficient, and its performance compares favorably to most existing blind algorithms. 相似文献
45.
Windlass H. Raj P.M. Balaraman D. Bhattacharya S.K. Tummala R.R. 《Electronics Packaging Manufacturing, IEEE Transactions on》2003,26(2):100-105
Polymer ceramic composites form a suitable material system for low temperature fabrication of embedded capacitors appropriate for the MCM-L technology. Improved electrical properties such as permittivity can be achieved by efficient filling of polymers with high dielectric constant ceramic powders such as lead magnesium niobate-lead titanate (PMN-PT) and barium titanate (BT). Photodefinable epoxies as the matrix polymer allow fine feature definition of the capacitor elements by conventional lithography techniques. The optimum weight percent of dispersant is tuned by monitoring the viscosity of the suspension. The dispersion mechanism (steric and electrostatic contribution) in a slightly polar solvent such as propylene glycol methyl ether acetate (PGMEA) is investigated from electrophoretic measurements. A high positive zeta potential is observed in the suspension, which suggests a strong contribution of electrostatic stabilization. By optimizing the particle packing using a bimodal distribution and modified processing methodology, a dielectric constant greater than 135 was achieved in PMN-PT/epoxy system. Suspensions are made with the lowest PGMEA content to ensure the efficiency of the dispersion and efficient particle packing in the dried film. Improved colloidal processing of nanoparticle-filled epoxy is a promising method to obtain ultra-thin capacitor films (<2/spl mu/m) with high capacitance density and improved yield. Capacitance of 35 nF/cm/sup 2/ was achieved with the thinnest films (2.5-3.0 /spl mu/m). 相似文献
46.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
47.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
48.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
49.
E. A. Gurieva P. P. Konstantinov L. V. Prokof D. A. Pshenaĭ-Severin M. I. Fedorov Yu. I. Ravich 《Semiconductors》2006,40(7):763-767
The coefficients of thermopower and electrical and thermal conductivity in the PbTe0.8Se0.1 S 0.1 solid solution with electron concentration (4.6–54) × 1018 cm?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb1?x SnxTe1?x Sex alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L0 numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L0 = 0.75 is obtained for a lightly doped sample at ~130 K. 相似文献
50.
The emerging software defined radio technologies will be an enabler for a new generation of dynamic wireless systems. It will also open up the possibility of allocating frequencies in a, more dynamic way than today. From an intersystem-interference point of view, this can cause unforeseen problems to occur due to the increased complexity in such applications. In such applications, a measure indicating whether or not a frequency band is possible to use from an electromagnetic interference point of view, must be found. A simple approach is to use the measured total average interference power within the receiver band. Since the interference impact on modern digital communication systems from an interference signal does not only depend on the power but also on the actual waveform of the interference signal, some kind of quality measure of the average-power approach would be convenient to use. In this paper, we introduce a simple quality measure of the average-power approach so that a rough adjustment for the interference-waveform properties can be done. 相似文献