Effective field and the Bloch-Siegert shift at bichromatic excitation of multiphoton EPR

The dynamics of multiphoton transitions in a two-level spin system excited by transverse microwave and longitudinal RF fields with the frequencies ω_mw and ω_rf, respectively, is analyzed. The effective time-independent Hamiltonian describing the “dressed” spin states of the “spin + bichromatic field” system is obtained by using the Krylov-Bogoliubov-Mitropolsky averaging method. The direct detection of the time behavior of the spin system by the method of nonstationary nutations makes it possible to identify the multiphoton transitions for resonances ω₀ = ω_mw + rω_rf (ω₀ is the central frequency of the EPR line, r = 1, 2), to measure the amplitudes of the effective fields of these transitions, and to determine the features generated by the inhomogeneous broadening of the EPR line. It is shown that the Bloch-Siegert shifts for multiphoton resonances at the inhomogeneous broadening of spectral lines reduce only the nutation amplitude but do not change their frequencies.     

Influence of Azimuthal Structure of Surface Waves on Efficiency of their Excitation by Tubular Electron Beams

The excitation of eigen surface waves by tubular electron beams in cylindrical discharge devices is studied. The influence of the wave‐field azimuthal structure on the excitation efficiency and nonlinear stage of the plasmabeam instability is investigated both numerically and analytically. Analytical expressions for the saturation amplitude and excitation efficiency of the wave under study are derived. They are found to agree well with results obtained by numerical modelling of the plasma‐beam interaction presented in this paper. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Method of lines with boundary elements for 1‐D transient diffusion‐reaction problems

Time‐dependent differential equations can be solved using the concept of method of lines (MOL) together with the boundary element (BE) representation for the spatial linear part of the equation. The BE method alleviates the need for spatial discretization and casts the problem in an integral format. Hence errors associated with the numerical approximation of the spatial derivatives are totally eliminated. An element level local cubic approximation is used for the variable at each time step to facilitate the time marching and the nonlinear terms are represented in a semi‐implicit manner by a local linearization at each time step. The accuracy of the method has been illustrated on a number of test problems of engineering significance. © 2005 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2006     

Study of hydrogen diffusion in boron/germanium codoped optical fiber

Presents a novel technique for studying the dynamics of hydrogen diffusion in optical fiber. It shows that the hydrogen contributes directly to the effective refractive index of the fiber by its dielectric susceptibility. It provides a simple theory that relates the refractive index change to the total hydrogen concentration in the fiber core. It also deduces that there is a small contribution of less than 5% to the refractive index through the photoelastic effect. A low-finesse fiber Bragg grating Fabry-Perot interferometer allows the determination of the evolution of the hydrogen concentration in situ. The experimental results obtained for isothermal and isobaric diffusion between 45/spl deg/C and 90/spl deg/C yielded values for the parameters of Arrhenius-type expressions for the diffusivity, permeability, and solubility of hydrogen in germanium/boron codoped single-mode fiber. In addition, least squares curve-fits for outdiffusion yielded the gas-phase mass-transfer coefficient as a function of temperature.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A comparison between different PMD compensation techniques

We quantify the benefits of using different techniques for compensation of polarization mode dispersion (PMD) in fiber-optic communication systems by means of numerical simulations. This is done both with respect to PMD-induced pulse broadening and in terms of system outage probability for different data formats [nonreturn-to-zero (NRZ) and return-to-zero (RZ)]. Attention is focused on simple and relevant single- and double-stage post-transmission compensators with a few degrees of freedom (DOF). It is generally believed that a PMD compensator with a polarization controller and a variable delay line can only compensate the PMD to the first order. We show, from analytical results, the counterintuitive fact that this scheme can also partially compensate for higher order PMD. We also investigate the benefit of using a polarizer as compensation element where the optical average power can be used as a feedback signal     

A Built-in Self-Test Scheme with Diagnostics Support for Embedded SRAM

In this paper we propose a novel built-in self-test (BIST) design for embedded SRAM cores. Our contribution includes a compact and efficient BIST circuit with diagnosis support and an automatic diagnostic system. The diagnosis module of our BIST circuit can capture the error syndromes as well as fault locations for the purposes of repair and fault/failure analysis. In addition, our design provides programmability for custom March algorithms with lower hardware cost. The combination of the on-line programming mode and diagnostic system dramatically reduces the effort in design debugging and yield enhancement. We have designed and implemented test chips with our BIST design. Experimental results show that the area overhead of the proposed BIST design is only 2.4% for a 128 KB SRAM, and 0.65% for a 2 MB one.     

利用框架理论对信号进行重建

在Hilbert空间中讨论了框架的一些重要的性质,定义了一个框架算子,并讨论了该算子的性质。根据实际问题构造了一框架,使信号在此框架下的投影正好为非均匀采样值。给出了一种框架界的估计方法和重建原信号的迭代算法,最后,用仿真验证了此算法的有效性。     

The microstructure of Cu films deposited by the self-ion assisted technique

The microstructures of Cu films deposited by the self-ion assisted, partially ionized beam (PIB) deposition technique under two different accelerating potentials, 0 KeV and 6 KeV, are compared. The 6 KeV film shows a bimodal (111) fiber and (100) fiber texture with an abundance of twin boundaries and a relatively large average grain size with a typical lognormal distribution. The 0 KeV film consists of small, mostly (111) oriented grains with islands of abnormally large (100) grains. The controlling factors for the abnormal growth of the (100) grains are discussed in relation to the observed microstructures, showing that all factors necessary for abnormal (100) growth are present in the films.