High-gain pseudomorphic InGaAs base ballistic hot-electron device

A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In _0.12Ga_0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In_0.12Ga_0.88As was estimated to be about 380 meV     

Arc root mobility on piezoelectrically actuated contacts in miniature circuit breakers

A novel contact opening mechanism has been developed using a piezoelectric actuator to open the contacts in a low contact opening velocity circuit breaker. The arc control on the contacts is critical for successful current interruption (10/sup 3/-10/sup 4/ A) in low voltage (<250V) devices. Previous work has shown how arc root commutation from the contact region into the arc chamber is affected by arc chamber materials, contact materials and the gap behind the moving contact for contact velocities between 1ms/sup -1/ and 10ms/sup -1/. This work is extended using a commercially available piezoelectric actuator to open the contacts. Contact opening speeds are assessed and the arc root mobility is characterized under this operating regime. A flexible test apparatus and solid-state high-speed arc imaging system are used to gather data on the arc root during the opening of the contacts. New experimental results are presented on the anode and cathode root velocity and arc root motion in an arc chamber with piezoelectrically actuated contact opening. These results can be used to improve the design of high current low voltage circuit breakers suitable for piezoelectric actuation.     

Financial Analysis and Marketing Strategy

A combination of concept (the product portfolio and the product life cycle) and empirical research (the PIMS study) can aid in clarifying the key issues involved in the selection of a firm's core strategies. Strategy control is multistage: periodic re-evaluation of strategy alternatives by use of the marketing audit; an analytical framework for control of chosen strategies by breaking down components and reporting their performance variances; and 'marketing segment' analysis for control of the detailed marketing plan.?     

Linear Receivers for Correlatively Coded MSK

In this paper we show that many spectrally efficient modified MSK schemes, termed generalized MSK, although not representable as OQPSK, may nevertheless be (suboptimally) demodulated using anI-Qreceiver with a proper choice of carrier-phase offset. Correlatively coded MSK schemes withI-Qreceivers are studied, and it is concluded that duobinary MSK and(1 + 2D + D^{2})/4MSK represent good performance-bandwidth tradeoffs among first- and second-order correlative coding polynomial schemes. The optimal design of these receivers are considered subject to the constraint of a finite duration impulse response, especially for asymptotic cases of arbitrarily small and large SNR. Filter design based on a zero-intersymbol interference constraint for PAM-based approximations of the signals is also considered. The optimized linearI-Qreceivers for(1 + D)/2MSK and(1 + D)^{2}/4MSK are presented. These receivers are only 0.28 and 1.24 dB poorer than the optimal (Viterbi) receivers at high SNR.     

Diophantine Frequency Synthesis for Fast-Hopping, High-Resolution Frequency Synthesizers

The application of the diophantine frequency synthesis (DFS) methodology is presented and certain practical aspects of it are illustrated through the design and frequency planning of two forward DFS synthesizers each using two Integer-N phase-locked loops (PLLs). Both synthesizers achieve frequency resolution about 100 times times better that their constituent PLLs without compromising hopping speed performance or spectral purity.     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Optical properties of doped bismuth telluride crystals in the region of plasma effects

The optical properties of bismuth telluride crystals doped with donor-and acceptor-type impurities are studied. The fact that energy corresponding to the resonance frequency of plasma oscillations of free charge carriers (plasmons) approaches the band-gap energy is detected in the infrared spectral region, where the main elementary excitations in the electronic system of these materials are observed. The mentioned approach of energies varies the intensity of electron-plasmon interaction, which affects the recombination processes in the materials widely used for the fabrication of thermoelectric energy converters.     

An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures

Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ～0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ～8.5% are attained for the electron-beam energy of 23 keV.     

A Low-Power Reconfigurable Logic Array Based on Double-Gate Transistors

A fine-grained reconfigurable architecture based on double gate technology is proposed and analyzed. The logic function operating on the first gate of a double-gate (DG) transistor is reconfigured by altering the charge on its second gate. Each cell in the array can act as logic or interconnect, or both, contrasting with current field-programmable gate array structures in which logic and interconnect are built and configured separately. Simulation results are presented for a fully depleted SOI DG-MOSFET implementation and contrasted with two other proposals from the literature based on directed self-assembly.     

Lein?l, Lein?lfirniss und Oelfarben

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