A study of three techniques used in the diffraction analysis ofshaped dual-reflector antennas

An examination is presented of three techniques used for the efficient computation of fields diffracted by a subreflector that has been shaped by geometrical optics synthesis. It is found that these techniques, which are based on the geometrical theory of diffraction (GTD), produce errors in the computed fields that are specific to shaped reflectors. These errors are examined for a reflector system shaped to produce maximum gain from a tapered feed illumination. The discrepancies are directly related to the caustic being located near an observation point of the GTD calculations. The errors found are localized, and they increase in magnitude as the caustic approaches the main reflector. In a general offset geometry, the location of the caustic may be located arbitrarily close to the main reflector given a prescribed output aperture distribution. For the specific case considered here-the common situation of shaping to produce maximum gain-the caustic is located near the edge of the main reflector and on the reflection shadow boundary. A local correction is derived which creates a uniform solution through the caustic and across the reflection shadow boundary. Away from this point the calculation recedes to the standard GTD solution     

Influence of Azimuthal Structure of Surface Waves on Efficiency of their Excitation by Tubular Electron Beams

The excitation of eigen surface waves by tubular electron beams in cylindrical discharge devices is studied. The influence of the wave‐field azimuthal structure on the excitation efficiency and nonlinear stage of the plasmabeam instability is investigated both numerically and analytically. Analytical expressions for the saturation amplitude and excitation efficiency of the wave under study are derived. They are found to agree well with results obtained by numerical modelling of the plasma‐beam interaction presented in this paper. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Method of lines with boundary elements for 1‐D transient diffusion‐reaction problems

Time‐dependent differential equations can be solved using the concept of method of lines (MOL) together with the boundary element (BE) representation for the spatial linear part of the equation. The BE method alleviates the need for spatial discretization and casts the problem in an integral format. Hence errors associated with the numerical approximation of the spatial derivatives are totally eliminated. An element level local cubic approximation is used for the variable at each time step to facilitate the time marching and the nonlinear terms are represented in a semi‐implicit manner by a local linearization at each time step. The accuracy of the method has been illustrated on a number of test problems of engineering significance. © 2005 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2006     

Study of hydrogen diffusion in boron/germanium codoped optical fiber

Presents a novel technique for studying the dynamics of hydrogen diffusion in optical fiber. It shows that the hydrogen contributes directly to the effective refractive index of the fiber by its dielectric susceptibility. It provides a simple theory that relates the refractive index change to the total hydrogen concentration in the fiber core. It also deduces that there is a small contribution of less than 5% to the refractive index through the photoelastic effect. A low-finesse fiber Bragg grating Fabry-Perot interferometer allows the determination of the evolution of the hydrogen concentration in situ. The experimental results obtained for isothermal and isobaric diffusion between 45/spl deg/C and 90/spl deg/C yielded values for the parameters of Arrhenius-type expressions for the diffusivity, permeability, and solubility of hydrogen in germanium/boron codoped single-mode fiber. In addition, least squares curve-fits for outdiffusion yielded the gas-phase mass-transfer coefficient as a function of temperature.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A comparison between different PMD compensation techniques

We quantify the benefits of using different techniques for compensation of polarization mode dispersion (PMD) in fiber-optic communication systems by means of numerical simulations. This is done both with respect to PMD-induced pulse broadening and in terms of system outage probability for different data formats [nonreturn-to-zero (NRZ) and return-to-zero (RZ)]. Attention is focused on simple and relevant single- and double-stage post-transmission compensators with a few degrees of freedom (DOF). It is generally believed that a PMD compensator with a polarization controller and a variable delay line can only compensate the PMD to the first order. We show, from analytical results, the counterintuitive fact that this scheme can also partially compensate for higher order PMD. We also investigate the benefit of using a polarizer as compensation element where the optical average power can be used as a feedback signal     

The microstructure of Cu films deposited by the self-ion assisted technique

The microstructures of Cu films deposited by the self-ion assisted, partially ionized beam (PIB) deposition technique under two different accelerating potentials, 0 KeV and 6 KeV, are compared. The 6 KeV film shows a bimodal (111) fiber and (100) fiber texture with an abundance of twin boundaries and a relatively large average grain size with a typical lognormal distribution. The 0 KeV film consists of small, mostly (111) oriented grains with islands of abnormally large (100) grains. The controlling factors for the abnormal growth of the (100) grains are discussed in relation to the observed microstructures, showing that all factors necessary for abnormal (100) growth are present in the films.     

An evolution operator in semiclassical electrodynamics

An evolution operatior is described, which acts on the operators of a problem to take it into the solutions of the corresponding problem of semiclassical electrodynamics.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 66–69, November, 1981.     

Microprocessor-Based Control of an Ion Beam Deposition System

A microprocessor-based system with 32 A/D, 24 D/A, and 16 ac load controllers, has been designed and built to monitor and control an ion beam thin-film deposition system. The A/D and D/A channels have electrical isolation of 7.5 kV between channels and between input and output. The microprocessor system keeps the ion beam deposition parameters stable for extended periods of operation and it is proposed as a means to greatly simplify switching from one deposition species to another to grow thin multilayer or alloy films.