Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Molecular Complexes of Crown Ethers in Crystals and Solutions

A review of the experimental and theoretical studies of the crown ether complexes with polar molecules in their crystals, solutions, and in a gas phase is given. The type of the molecular bonds in the complexes, their stoichiometry, and the change in the macrocycle conformation during complex formation are considered, as well as the effect of the macrocycle structure and the nature of the medium on the efficiency of the molecular bonding. New data are given on the enthalpies of transfer of the crown ethers from tetrachloromethane into solvents capable of forming hydrogen bonds. The enthalpies of specific interactions of macrocycles with the molecules of the solvents in the medium of the same solvents are characterized. The conformations of the crown ethers in the media under study are discussed.     

A least mean square error synthesis with pattern constraints atmultiple frequencies

The pattern synthesis techinque described allows the power pattern to be optimized in a very useful sense over the desired operating band of the antenna array. This is an improvement over previous techniques involving constraints on such artificial parameters as source norm and superdirectivity ratio, which do not, in fact, ensure a useful pattern bandwidth. The procedure described provides minimum mean square error over an arbitrary number of discrete frequencies     

Co-cliques and star complements in extremal strongly regular graphs

Suppose that the positive integer μ is the eigenvalue of largest multiplicity in an extremal strongly regular graph G. By interlacing, the independence number of G is at most 4μ² + 4μ − 2. Star complements are used to show that if this bound is attained then either (a) μ = 1 and G is the Schläfli graph or (b) μ = 2 and G is the McLaughlin graph.     

Growth and study of single crystals of (Na,K)NbO<Subscript>3</Subscript> solid solutions

(Na, K)NbO₃ crystals with a perovskite structure and a KNbO₃ content up to 40 mol % were grown from flux with the use of the solvent NaBO₂. The dielectric measurements of the crystals grown revealed phase transitions that had never been observed before in ceramic samples.     

On the dispersion of a solute in oscillating flow of a non-Newtonian fluid in a channel

The paper presents an exact analysis of the dispersion of an immiscible solute in a non-Newtonian fluid (known as an incompressible second-order fluid which shows viscoelastic behaviour) flowing slowly in a parallel plate channel in the presence of a periodic pressure gradient. Using a generalized dispersion model which is valid for all times after the solute injection, the diffusion coefficients K _i (τ)(i=1,2,3,…) are obtained as functions of time τ in the case when the initial solute distribution is in the form of a slug of finite extent. The analysis leads to the novel result that K ₂(τ) (which is a measure of the longitudinal dispersion coefficient of the solute) has a steady part S in addition to a fluctuating part D ₂(τ) due to the pulsatility of the flow. It is found that S decreases with increase in the viscoelastic parameter M for given values of the amplitude λ and frequency ω of the pressure pulsation. On the other hand, it is found that at a fixed instant τ, the amplitude of D ₂(τ) increases with increase in M for given values of λ and ω. Further it is shown that at a given instant τ, the amplitude of D ₂(τ) decreases with increase in ω for given λ and M and the profile for D ₂(τ) becomes progressively flatter with increase in ω. Finally the axial distribution of the average concentration θ _m of the solute over the channel cross-section is determined at different instants after the solute injection for several values of M, λ and ω. The present study is likely to have important bearing on the problem of dispersion of tracers in blood flow through arteries.