Kinetics of Hydrogen Peroxide Decomposition in Guaiacol Solution, Catalyzed by Hexacyanoferrate(II)

The kinetics of hydrogen peroxide decomposition in a guaiacol solution, catalyzed by potassium hexacyanoferrate(II), were studied. The reaction mainly follows the pathway of guaiacol hydroxylation. The reaction order is 1 with respect to H₂O₂, 0.5 with respect to hexacyanoferrate, and from 0.4 to 0 with respect to guaiacol (the latter parameter decreases with increasing guaiacol concentration). The apparent activation energy is 105 kJ mol^{- 1}. A kinetic scheme of the process was proposed. An expression consistent with the experiment was obtained for the rate of hydrogen peroxide decomposition in the presence of guaiacol, catalyzed by hexacyanoferrate(II).     

Interference inspection of the aspherical components of an objective for nanolithography

Methods and schemes to inspect the EUV mirror shape are developed on the basis of a point diffraction interferometer with computer processing of interferograms. A measurement accuracy to within 0.001 of a wavelength in the visual range is achieved.     

Kinetics and mechanism of the formation of poly[(1,1,3,3-tetramethyldisiloxanyl)ethylene] and poly(methyldecylsiloxane) by hydrosilylation

The kinetics of the formation of poly(carbosiloxane), as well as of alkyl-substituted poly(siloxane), by Karstedt's catalyst catalyzed hydrosilylation were investigated. Linear poly(carbosiloxane), poly[(1,1,3,3-tetramethyldisiloxanyl)ethylene], (PTMDSE), was obtained by hydrosilylation of 1,3-divinyltetramethyldisiloxane (DVTMDS) and 1,1,3,3-tetramethyldisiloxane (TMDS), while alkyl-substituted poly(siloxane), poly(methyldecylsiloxane), (PMDS), was synthesized by hydrosilylation of poly(methylhydrosiloxane) (PMHS) and 1-decene. To investigate the kinetics of PTMDSE formation, two series of experiments were performed at reaction temperatures ranging from 25 to 56 °C and with catalyst concentrations ranging from 7.0 × 10⁻⁶ to 3.1 × 10⁻⁵ mol Pt/mol CHCH₂. A series of experiments was performed at reaction temperatures ranging from 28 to 48 °C, with catalyst concentrations of 7.0 ×10⁻⁶ mol of Pt per mol of CHCH₂, when kinetics of PMDS formation was investigated. All reactions were carried out in bulk, with equimolar amounts of the reacting Si H and CHCH₂ groups. The course of the reactions was monitored by following the disappearance of the Si H bands using quantitative infrared spectroscopy. The results obtained showed typical first order kinetics for the PTMDSE formation, consistent with the proposed reaction mechanism. In the case of PMDS an induction period occurred at lower reaction temperatures, but disappeared at 44 °C and the rate of Si H conversion also started to follow the first-order kinetics. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2246–2258, 2007     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region     

Molecular Complexes of Crown Ethers in Crystals and Solutions

A review of the experimental and theoretical studies of the crown ether complexes with polar molecules in their crystals, solutions, and in a gas phase is given. The type of the molecular bonds in the complexes, their stoichiometry, and the change in the macrocycle conformation during complex formation are considered, as well as the effect of the macrocycle structure and the nature of the medium on the efficiency of the molecular bonding. New data are given on the enthalpies of transfer of the crown ethers from tetrachloromethane into solvents capable of forming hydrogen bonds. The enthalpies of specific interactions of macrocycles with the molecules of the solvents in the medium of the same solvents are characterized. The conformations of the crown ethers in the media under study are discussed.     

A least mean square error synthesis with pattern constraints atmultiple frequencies

The pattern synthesis techinque described allows the power pattern to be optimized in a very useful sense over the desired operating band of the antenna array. This is an improvement over previous techniques involving constraints on such artificial parameters as source norm and superdirectivity ratio, which do not, in fact, ensure a useful pattern bandwidth. The procedure described provides minimum mean square error over an arbitrary number of discrete frequencies     

Co-cliques and star complements in extremal strongly regular graphs

Suppose that the positive integer μ is the eigenvalue of largest multiplicity in an extremal strongly regular graph G. By interlacing, the independence number of G is at most 4μ² + 4μ − 2. Star complements are used to show that if this bound is attained then either (a) μ = 1 and G is the Schläfli graph or (b) μ = 2 and G is the McLaughlin graph.