Nanocrystalline ceramic films for efficient conversion of light into electricity

Transparent nanocrystalline films of oxide semiconductors such as TiO₂ and Fe₂O₃ have been prepared on a conducting glass support employing a sol-gel procedure. The films are composed of nanometer-sized particles sintered together to allow for percolative charge carrier transport. The internal surface of these films is very high, roughness factors of the order of 1000 being readily obtained. Electric polarization was applied for forward and reverse biasing of the films and the resulting optical changes have been analyzed to derive their flat band potential. Band gap excitation of such nanocrystalline semiconductors produces electron-hole pairs which migrate through the film to be collected as electric current. Steady state photolysis and time resolved laser techniques have been applied to scrutinize the mechanism of light induced charge separation within the nanostructure. When derivatized with a suitable chromophore, TiO₂ films give extraordinary efficiencies for the conversion of incident photons into electric current, exceeding 90% for certain transition metal complexes within the wavelength range of their absorption band. The underlying physical principles of these astonishing findings will be discussed. Exploiting this discovery, we have developed a new type of photovoltaic device whose overall light to electric energy conversion yield is 10% under simulated AM 1.5 solar radiation.     

Damage and strain in pseudomorphic vs relaxed GexSi1−x layers on Si(100) generated by Si ion irradiation

We compare both the strain and damage that 100 keV Si irradiation at room temperature introduces in pseudomorphic and relaxed Ge_xSi_1−x films grown on Si(100) substrates. The ion range is such that the Si/Ge_xSi_1−x interface is not significantly damaged. The amount of damage produced in pseudomorphic and relaxed Ge_xSi_1−x layers of similar x for irradiation doses up to 2.5 × 10¹⁴ Si/cm² is the same, which proves that a pre-existing uniform strain does not noticeably affect the irradiation-induced damage. However, the irradiation-induced strain does depend on the pre-existing strain of the samples. Possible interpretations are discussed. On leave from Inst. voor Kern en Stralingsfysika, Catholic University of Leuven, Belgium.     

Nitro musks in cosmetic products—determination by headspace solid-phase microextraction and gas chromatography with atomic-emission detection

Summary The combination of headspace solid-phase microextraction with atomic-emission detection enables highly selective and sensitive determination of itro musk compounds in cosmetic products. Sample preparation is considerably simplified; there is no solvent extraction step. Enrichment is influenced by the type and amount of cosmetic product investigated. The lowest amount giving well detectable peaks is 1 mg musk compound per kg sample. Calibration curves obtained from spiked solutions of selected reference cosmetics in water show very good linearity. Relative standard deviations of peak areas from repeated measurements are usually <10%. Presented at the 21^st ISC held in Stuttgart, Germany, 15^th–20^th September, 1996     

On top-down splaying

The splay tree is a self-adjusting binary search tree which has a good amortized performance. This paper studies some properties of top-down splay trees. Different ways to charge for the primitive operations of top-down splaying are discussed. We also give some empirical results concerning the behaviour of different top-down restructuring algorithms.This work was supported by the Academy of Finland.     

The influence of photodissociated N2O in pulsed-laser deposition of Y-Ba-Cu-O films

Pulsed-laser deposition of YBa₂Cu₃O₇ in N₂O permits lowering of the substrate temperature with respect to deposition in O₂ atmosphere. Additional photodissociation of N₂O near the substrate surface deteriorates the superconducting properties of deposited films.On leave from: Institute of Applied Physics of the Academy of Sciences of the USSR, SU-603600 Nishni Nowgorod, USSR     

Calculation of photoionization cross sections of small metal clusters

In this paper we present photoionization cross sections of the Cu and Al dimers and tetramers. The local spin density method is applied to calculate the electronic structure and the ground state potential. The cross sections are calculated using the continuum multiple scattering method, and a basic analysis of the photoionization process is given within the independent particle picture.     

Ein Verfahren zur Synthese enantiomerenreiner Alkanole durch reduktive Entschwefelung von Thiophenalkoholen

Summary Acetals3 and4 of alkylthienylcarbinols1 were prepared using an enantiomerically pure lactol2. In the key step these compounds were desulfurized. After deprotection the target compounds7 andent-7 were obtained.

Herrn Prof. Dr. H. Oelschläger zum 70. Geburtstag gewidmet     

Cross sections for multi-particle final states at a linear collider

In this paper total cross sections for signals and backgrounds of top- and Higgs-production channels in e ⁺ e^- collisions at a future linear collider are presented. All channels considered are characterized by the emergence of six-particle final states. The calculation takes into account the full set of tree-level amplitudes in each process. Two multi-purpose parton level generators, HELAC/PHEGAS and AMEGIC + + , are used, and their results are found to be in perfect agreement.Received: 26 November 2003, Revised: 15 January 2004, Published online: 3 March 2004     

The Rate Constant for Dissociative Electron Attachment to Ozone Revisited

The rate constant for dissociative electron attachment to ozone has been derived over the energy range from about 0 to 10 eV using recently measured and also corrected cross section data. The new rate constant data sets for two partial dissociative channels, as well as for the total dissociative electron attachment, are compared with previously reported values, and existing discrepancies are discussed.