Polarized electron capture by3He2+ at 20–28 keV

Nuclear polarization was measured by means of beam foil spectroscopy for a³He⁺ ion produced by an electron capture process of a³He²⁺ from a polarized sodium atom in an incident energy range from 20 to 28 keV. Assuming that a polarized electron of a sodium atom is predominantly captured to the 3d orbital of a³He⁺ ion andcascades down to the 1s ground state via the 2p orbital, an alignment factorA ₀ ^col (L=2) for the 3d orbital of a³He⁺ ion was extracted by comparing the observed initial sodium polarization andfinal nuclear polarization. The observedA ₀ ^col (L=2) showed a less pronounced energy dependence andwere qualitatively reproduced by the theoretical calculation.     

The P,Q controllable domain of a single phase PWM converter topreserve sinusoidal AC current waveform

The P,Q controllable domain for any single phase utility-interactive voltage-source pulse width modulation (PWM) converter to preserve the AC current waveform sinusoidally, is derived mathematically to form an ellipse determined by its mains circuit parameters, independently of the PWM types. The elliptical domain was examined by and verified from both digital simulation and experiment     

The role of a radial ion-track distribution in semiconductors studied by numerical simulations

The effect of radial ion-track distribution on the transient current in semiconductors caused by a high-energy heavy ion strike was studied. Reasonable agreement was observed in experimental and calculated transient currents for ion energies ranging from several to several hundred MeV when the radius of the ion track used in the numerical simulations was shorter or equivalent to that of the penumbra radius.     

Observation of transverse polarization asymmetries of charged pion pairs in e+e- annihilation near √s = 10.58 GeV

The interference fragmentation function translates the fragmentation of a quark with a transverse projection of the spin into an azimuthal asymmetry of two final-state hadrons. In e(+)e(-) annihilation the product of two interference fragmentation functions is measured. We report nonzero asymmetries for pairs of charge-ordered π(+)π(-) pairs, which indicate a significant interference fragmentation function in this channel. The results are obtained from a 672 fb(-1) data sample that contains 711 × 10(6) π(+)π(-) pairs and was collected at and near the Υ(4S) resonance, with the Belle detector at the KEKB asymmetric-energy e(+)e(-) collider.     

Procyanidins are potent inhibitors of LOX-1: a new player in the French Paradox

Lectin-like oxidized LDL receptor-1 (LOX-1) is an endothelial receptor for oxidized LDL (oxLDL) and plays multiple roles in the development of cardiovascular diseases. We screened more than 400 foodstuff extracts for identifying materials that inhibit oxLDL binding to LOX-1. Results showed that 52 extracts inhibited LOX-1 by more than 70% in cell-free assays. Subsequent cell-based assays revealed that a variety of foodstuffs known to be rich in procyanidins such as grape seed extracts and apple polyphenols, potently inhibited oxLDL uptake in Chinese hamster ovary (CHO) cells expressing LOX-1. Indeed, purified procyanidins significantly inhibited oxLDL binding to LOX-1 while other ingredients of apple polyphenols did not. Moreover, chronic administration of oligomeric procyanidins suppressed lipid accumulation in vascular wall in hypertensive rats fed with high fat diet. These results suggest that procyanidins are LOX-1 inhibitors and LOX-1 inhibition might be a possible underlying mechanism of the well-known vascular protective effects of red wine, the French Paradox.     

A 16-Mb Toggle MRAM With Burst Modes

This paper describes a recently developed 16-Mb toggle magnetic random access memory (MRAM). It has 100-MHz burst modes that are compatible with a pseudo-SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, we propose a distributed-driver wide-swing current-mirror scheme, an interleaved and pipelined memory-array group activation scheme, and a noise-insulation switch scheme. These circuit schemes compensate the toggle cell timing overhead in write modes and maintain write-current precision that is essential for the wide operational margin of MRAMs. Because toggle cells are very resistant to write disturbance errors, we designed the 16-Mb MRAM to include a toggle MRAM cell. The MRAM was fabricated with 0.13-mum CMOS and 0.24-mum MRAM processes with five metal layers.