Far-infrared pump-probe measurement of the lifetime of the 2p−1 shallow donor level in n-GaAs

The low temperature lifetime of electrons excited in the 2p^?1 donor level of n-GaAs has been studied in a far-infrared pump-probe experiment. The measurement has been carried out using a pulsed far-infrared molecular gas laser working at a wavelength of 292µm, with the sample in a magnetic field of 5.1 T, resonant with the 1s_o?2p^?1 transition. Two FIR pulses are sliced from one FIR-laser pulse by means of optical switching techniques using two Q-switched Nd:YAG lasers. The first pulse is used to saturate the transition, while the second pulse probes the return of the population in the excited state towards thermal equilibrium as a function of the time delay after the excitation pulse. The value of 350±50 ns found for the lifetime falls in line with CW saturation results on materials with other doping concentrations.     

High speed p-type SiGe modulation-doped field-effect transistors

We report on the fabrication and characterization of high-speed p-type modulation-doped field-effect transistors (MODFETs) with 0.7-μm and 1-μm gate-lengths having unity current-gain cut-off frequencies (f_T) of 9.5 GHz and 5.3 GHz, respectively. The devices were fabricated on a high hole mobility SiGe heterostructure grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). The dc maximum extrinsic transconductance (g_m) is 105 mS/mm (205 mS/mm) at room temperature (77 K) for the 0.7-μm gate length devices. The fabricated devices show good pinch-off characteristics and have a very low gate leakage current of a few μA/mm at room temperature and a few nA/mm at 77 K     

On the optimum set of polarization measurements for the scattering of two indentical fermions to determine the helicity amplitudes

The polarization asymmetries related to usual polarizations combine at least 4 different helicity amplitudes. The introduction of ±45° inclined transverse polarizations allows us to obtain the complete set of new polarization asymmetries combining only up to 3 helicity amplitudes. There are no further polarization asymmetries depending on a smaller number of helicity amplitudes. These expressions are most economical to determine the helicity amplitudes from observed data. Some of them are suitable to study especially the spin-flip effects. We give a complete Table of all such polarization asymmetries.     

A generalized suboptimum unequally spaced channel allocationtechnique. I. In IM/DD WDM systems

Four-wave mixing (FWM) is the most serious fiber nonlinearity associated with low-input optical power levels in long-haul multichannel optical systems employing dispersion-shifted fiber. To reduce the crosstalk due to FWM, a generalized suboptimum unequally spaced channel allocation (S-USCA) technique is proposed and investigated. Even though the developed technique is useful in combating FWM crosstalk in wavelength division multiplexing (WDM) lightwave systems with up to 12 channels, its main virtue is in designing multichannel WDM lightwave systems with more than 12 channels. Comparisons of power penalty due to FWM between equal channel spacing (ECS) systems and the S-USCA systems are presented. It is shown that for an intensity modulation/direct detection (IM/DD) transmission system operating in an optical bandwidth of 16 nm with 0 dBm (1 mW) peak optical input power per channel, while a conventional ECS WDM system with 0.84-nm channel spacing cannot even achieve a bit-error rate (BER)=10^-9, the suboptimum technique developed in this paper, for the same minimum channel spacing, can achieve a BER=10^-9 with an FWM crosstalk power of less than 1 dB at the worst channel in a 20-channel WDM system     

A floating-gate analog memory device for neural networks

A floating-gate MOSFET device that can be used as a precision analog memory for neural network LSIs is described. This device has two floating gates. One is a charge-injection gate with a Fowler-Nordheim tunnel junction, and the other is a charge-storage gate that operates as a MOSFET floating gate. The gates are connected by high resistance, and the charge-injection gate is small so that its capacitance is much less than that of the charge-storage gate. By applying control pulses to the charge-injection gate, it is possible to charge and discharge the MOSFET floating gate in order to modify the MOSFET current with high resolution over 10 b. The charge injection can be carried out without disturbing the MOSFET output current with high voltage control pulses. This device is useful for on-chip learning in analog neural network LSIs     

Image coding by multistep, adaptive flux interpolation

The authors describe and discuss the new technique, multistep adaptive flux interpolation (MAFI), and its application to image data for coding. When applied to an image, MAFI produces an output which is also in an image form, but which has a more uniform feature density and a greatly reduced size. MAFI warps the input image by removing those rows and columns which contain a majority of redundant pixels. The side information required for reconstruction is minimal, and the image can be further compressed using conventional coders, making the compression ratio even higher. Because of its warped nature, the MAFI output's statistics are also more consistent with the properties assumed by block-based discrete cosine transform (DCT) methods     

Structure of (Ba0.7Sr0.3)TiO3 films prepared by chemical solution deposition during crystallization on a sublayer

Barium strontium titanate (BST) films on Si-SiO₂-Ti-Pt substrates are prepared by chemical solution deposition upon crystallization on a sublayer. The structure of the BST films is investigated using transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction analysis.     

Nonlinear-optical and micro-Raman diagnostics of thin films and nanostructures of ABO3 ferroelectrics

Ferroelectric composite two-dimensional ferroelectric/aluminum oxide nanostructures were studied. A porous aluminum oxide matrix was used as a template into which a ferroelectric precursor was introduced, followed by annealing. The prepared nanostructures were studied using optical second harmonic generation and micro-Raman scattering.     

Optical properties of Fe-doped silica films on Si

Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetraethoxysilane (TEOS) solution in ethanol and water with aqueous solution of Fe-chloride or Fe-acetate. The coating solution was deposited on Si substrates by spin on technique. The size of Fe-containing nanometric-sized particles depended on technology and varied from 20 to 100 nm. Optical response of complex hybrid samples SiO₂:Fe/Si was interpreted in a multi-layer model. In the inverse problem, the Maxwell equations were solved by transfer matrix technique. Dielectric function of Fe-doped silica layers was calculated in the model of effective media. Analysis of optical data has shown that various Fe-oxides formed. Experimental data for films obtained from precursors with Fe-acetate and annealed in hydrogen were well described by the model calculations taking into account a small contribution 1-5% of metal Fe imbedded in silica. The Fe/Fe-O contribution to optical response increased for samples grown from FeCl₃-precursor. Ellipsometric data for Fe-doped silica films on Si were interpreted taking into account the structural AFM studies as well as the results of magnetic measurements.     

Infinite-dimensional linear groups with restrictions on subgroups that are not soluble <Emphasis Type="Italic">A</Emphasis><Subscript>3</Subscript>-groups

We are concerned with infinite-dimensional locally soluble linear groups of infinite central dimension that are not soluble A₃-groups and all of whose proper subgroups, which are not soluble A₃-groups, have finite central dimension. The structure of groups in this class is described. The case of infinite-dimensional locally nilpotent linear groups satisfying the specified conditions is treated separately. A similar problem is solved for infinite-dimensional locally soluble linear groups of infinite fundamental dimension that are not soluble A₃-groups and all of whose proper subgroups, which are not soluble A₃-groups, have finite fundamental dimension. __________ Translated from Algebra i Logika, Vol. 46, No. 5, pp. 548–559, September–October, 2007.