InGaAs/AlAs/InGaAsP resonant tunneling hot electron transistorsgrown by chemical beam epitaxy

InP-based resonant tunneling hot electron transistors (RHET's) were studied systematically using chemical beam epitaxy (CBE) for the first time. All the RHET's studied have a highly strained AlAs/In_0.75Ga_0.25As/AlAs resonant tunneling double barrier as a hot electron injector, and an InP collector barrier with or without InGaAsP graded layers. The highest transport ratio (α) observed is 0.98, and the highest peak-to-valley current ratios (PVR's) measured are 20 and 200 in the collector current and base current, respectively, at 80 K. A self-consistent simulation is used as a reference to optimize the hot electron injector and to explain the ballistic transport. An energy spectrometer technique was applied to the RHET's for resolving the hot electron energy distribution which showed a full width at half maximum (FWHM) of around 58 meV, indicating ballistic transport of electrons. Finally, room temperature transistor action was also observed with a β of 4 and a cutoff frequency of 31 GHz     

Analysis of the latch and breakdown phenomena in N and P channelthin film SOI MOSFET's as a function of temperature

A study of the latch and breakdown phenomena in thin film N- and P-channel SOI MOSFET's is performed as a function of temperature. For P-type MOSFET's, for which no investigation of the parasitic bipolar transistor has been carried out, we show that latch problems are observed in the subhalf-micrometer range, while this feature is emphasized in the micrometer range for N-channel transistors. In addition, it is demonstrated by theoretical considerations and experimental results that these parasitic effects are strongly reduced at liquid nitrogen temperature and vanish almost entirely at liquid helium temperature. Similar improvements are obtained at low temperature in both N and P-channel SIMOX MOSFET's     

FDTD simulation of microwave sintering of ceramics in multimodecavities

Microwave sintering of ceramics in multimode cavities, particularly the use of picket-fence arrangements, has recently received considerable attention. Various types of ceramics have been successfully sintered and, in some cases, a desirable and unique “microwave effect” has been observed. At present, various aspects of the sintering profess such as preparation of sample sizes and shapes, types of insulations, and the desirability of including a process stimulus such as SiC rods are considered forms of art and highly dependent on human expertise. The simulation of realistic sintering experiments in a multimode cavity may provide an improved understanding of critical parameters involved and allow for the development of guidelines towards the optimization of the sintering process. In this paper, we utilize the FDTD technique to model various geometrical arrangements and material compatibility aspects in multimode microwave cavities and to simulate realistic sintering experiments. The FDTD procedure starts with the simulation of a field distribution in multimode microwave cavities that resembles a set of measured data using liquid crystal sheets. Also included in the simulation is the waveguide feed as well as a ceramic loading plate placed at the base of the cavity     

Advanced service provisioning in a partly digitalized networkenvironment

Considering the given situation in the Hungarian telecommunications infrastructure and the prompt demands for advanced services, this paper describes an individual solution to provide intelligent services in the mixed analog and partly digitalized Hungarian public telephone network. The preIN system is based on co-located stand-alone units equipped with SSP/SCP functionality     

Focusing characteristics of a wide-striped laser diode integratedwith a microlens

We developed a wide-striped laser diode integrated with a microlens that provides good focusing characteristics through a small focusing spot. We calculated and demonstrated that a 60-μm-wide core and a 1.9-μm-high ridge is the best structure for fundamental index-guiding mode oscillation of a wide-striped laser diode. We integrated a wide-striped laser diode with the developed microlens in the Fresnel diffraction held, and demonstrated that a device with a 60-μm-wide core has a minimum focusing spot width of 2.0 μm in the horizontal direction. Also, we estimated the wavefront in the Fresnel diffraction field from the working distance error of a lens designed for a collimated incident beam, and showed that the working distance error, focusing spot width, and sidelobe can be improved by this estimated wavefront     

Transformations of cobalt trimethylacetate complexes with pyrazole upon oxidation by air in THF

Synthetic routes to oxidation of cobalt atoms in cobalt trimethylacetate complexes containing coordinated pyrazole molecules have been considered.     

Asymptotics of a multiple Cauchy integral with rapidly oscillating exponential

An asymptotic expansion uniform with respect to a parameter is obtained for a multiple Cauchy integral with a rapidly oscillating exponential in the integrand under the assumption that the singularity lines are in a general position.Translated fromMatematicheskie Zametki, Vol. 58, No. 2, pp. 231–242, August, 1995.The work was financially supported by the Russian Foundation for Basic Research under grant No. 94-01-00193-a.     

Mistracking in successive PCM/ADPCM transcoders

An analysis is presented of the causes of the accumulation of quantizing noise found in the transient state for successive CCITT adaptive differential pulse-code-modulation (ADPCM) transcoders connected synchronously. By decoupling the predictor and quantizer effect it is proved that, owing to a self-stabilization phenomenon, narrowband inputs cause local instabilities in the predictor of the jointly adaptive autoregressive moving-average-prediction/quantization used in the ADPCM 32-kb/s algorithm. Despite the assured global stability, these local instabilities are not synchronized at the encoder and its preceding decoder, and a mistracking occurs which creates quantizing noise accumulation. The tracking is then shown to be very sensitive to predictor/quantizer interaction. The discontinuities introduced in the standardized adaptive quantizer extend the mistracking problem to wideband inputs. A smoothed quantizer with reduced inauspicious interaction is proposed to remedy the problem     

Highly integrated direct conversion receiver for GSM/GPRS/EDGE with on-chip 84-dB dynamic range continuous-time /spl Sigma//spl Delta/ ADC

This paper describes a highly digitized direct conversion receiver of a single-chip quadruple-band RF transceiver that meets GSM/GPRS and EDGE requirements. The chip uses an advanced 0.25-/spl mu/m BiCMOS technology. The I and Q on-chip fifth-order single-bit continuous-time sigma-delta (/spl Sigma//spl Delta/) ADC has 84-dB dynamic range over a total bandwidth of /spl plusmn/135 kHz for an active area of 0.4 mm/sup 2/. Hence, most of the channel filtering is realized in a CMOS IC where digital processing is achieved at a lower cost. The systematic analysis of dc offset at each stage of the design enables to perform the dc offset cancellation loop in the digital domain as well. The receiver operates at 2.7 V with a current consumption of 75 mA. A first-order substrate coupling analysis enables to optimize the floor plan strategy. As a result, the receiver has an area of 1.8 mm/sup 2/.