红外干扰技术的发展趋势

介绍了红外干扰技术的发展历程以及装备的研制、改进情况,指出了在现代战争中发展红外干扰技术的优势和重要性,重点探讨了几种红外干扰的技术性能及其特点,最后论述了红外干扰技术的发展现状与趋势.     

考虑到束-波相互作用的速调管离子噪声二维模拟

采用粒子模拟的方法并考虑电子束与电磁波的相互作用，首次直接得到了速调管输出信号的离子噪声图像，阐述了束电子、二次电子、离子、电磁场之间的相互作用的动力学过程. 指出离子噪声所表现出来的相位波动是由电子束速度的波动引起的，电子束速度的变化来源于管内离子数量的变化，离子的数量的变化又与电子束状态变化相互影响，这是离子噪声产生的根本原因. 二次电子对离子噪声产生过程的影响甚微，但是其行为却反映了离子噪声的形成机理. 离子噪声引发的输出信号幅度波动取决于电子束速度和半径的改变，与离子行为密切相关. 关键词： 离子噪声 速调管 粒子模拟 电子束     

Progress of microscopic thermoelectric effects studied by micro- and nano-thermometric techniques

Heat dissipation is one of the most serious problems in modern integrated electronics with the continuously decreasing devices size. Large portion of the consumed power is inevitably dissipated in the form of waste heat which not only restricts the device energy-efficiency performance itself, but also leads to severe environment problems and energy crisis. Thermoelectric Seebeck effect is a green energy-recycling method, while thermoelectric Peltier effect can be employed for heat management by actively cooling overheated devices, where passive cooling by heat conduction is not sufficiently enough. However, the technological applications of thermoelectricity are limited so far by their very low conversion efficiencies and lack of deep understanding of thermoelectricity in microscopic levels. Probing and managing the thermoelectricity is therefore fundamentally important particularly in nanoscale. In this short review, we will first briefly introduce the microscopic techniques for studying nanoscale thermoelectricity, focusing mainly on scanning thermal microscopy (SThM). SThM is a powerful tool for mapping the lattice heat with nanometer spatial resolution and hence detecting the nanoscale thermal transport and dissipation processes. Then we will review recent experiments utilizing these techniques to investigate thermoelectricity in various nanomaterial systems including both (two-material) heterojunctions and (single-material) homojunctions with tailored Seebeck coefficients, and also spin Seebeck and Peltier effects in magnetic materials. Next, we will provide a perspective on the promising applications of our recently developed Scanning Noise Microscope (SNoiM) for directly probing the non-equilibrium transporting hot charges (instead of lattice heat) in thermoelectric devices. SNoiM together with SThM are expected to be able to provide more complete and comprehensive understanding to the microscopic mechanisms in thermoelectrics. Finally, we make a conclusion and outlook on the future development of microscopic studies in thermoelectrics.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

一种双正则项全变差高光谱图像去噪算法

受传感器特性影响,高光谱图像中的噪声在各个维度都有体现。噪声的存在降低了高光谱图像中信息的有效性,在进行地物分类前必须采用适当的算法对噪声予以去除。文章针对高光谱图像的噪声特性,提出了一种基于全变差的高光谱图像去噪算法。该算法将经典二维图像全变差去噪模型推广至三维形式,提出了采用双正则项及相应的调整参数的目标函数,在三维空间中完成新目标函数的离散化,并采用基于优化-最小化算法的迭代方法对目标函数进行优化与求解。对星载Hyperion成像光谱仪数据的实验表明,适当的设置调整参数,该方法可很好地提高高光谱图像的各波段信噪比、平滑光谱曲线并保留细节特征,其去噪效果优于经典的MNF去噪算法及Savitzky-Golay滤波方法。     

LED毫伏级待测电动势实验仪的设计及其稳定性的研究

为了满足电位差计实验对毫伏级待测电动势需求,设计了LED毫伏级待测电动势实验仪,并对其稳定性进行了研究.待测电动势实验仪是通过光电转换来实现的,输出的毫伏级电动势在电位差计实验仪的各个测量点都能稳定,能够满足箱式电位差计测量范围和精度要求,是比较理想的箱式电位差计实验配套仪器,能够大大提高学生的实验效率和教师对实验设计的选择性,实验效果良好.     

Spectral Properties and Solubilization Location of 2'-Ethylhexyl 4-(N,N-Dimethylamino)benzoate in Micelles

在阳离子、非离子和阴离子表面活性剂胶束溶液中,研究了4-(N,N-二甲氨基)苯甲酸2'-乙基己基酯(EHDMAB)的双重荧光和紫外吸收．当EHDMAB增溶在不同的胶束溶液中,紫外吸收增强,在离子型胶束溶液中,可观察到具有较长波长的EHDMAB分子内扭转电荷转移(TICT)荧光,相反,在非离子型胶束溶液中,可观察到具有较短波长TICT荧光,特别是位于阳离子胶束Stern层中的吡啶阳离子可强烈猝灭EHDMAB分子的双重荧光,所吸收的紫外辐射主要通过TICT荧光和非辐射去活化衰减．按照EHDMAB分子TICT荧光在有机溶剂中的极性依赖性,EHDMAB分子的4-(N,N-二甲氨基)在离子型胶束和非离子型胶束中处于不同的极性环境;根据EHDMAB和表面活性剂分子的结构和大小分析,EHDMAB分子的4-(N,N-二甲氨基)应朝向胶束的极性头基团,而2'-乙基己基链则朝向疏水性的胶束内核．动态荧光猝灭测量为EHDMAB分子在不同胶束中的位置进一步提供了佐证．     

Dynamic characteristics and simulation of traffic flow with slope

This paper proposes a new traffic model to describe traffic flow with slope under consideration of the gravity effect. Based on the model, stability analysis is conducted and a numerical simulation is performed to explore the characteristics of the traffic flow with slope. The result shows that the perturbation of the system is an inherent one, which is induced by the slope. In addition, the hysteresis loop is represented through plotting the figure of velocity against headway and highly depends on the slope angle. The kinematic wave at high density is also obtained through reproducing the phenomenon of stop-and-go traffic, which is significant to explore the phase transition of traffic flow and the evolution of traffic congestion.     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

源气体对沉积的a-C∶F∶H薄膜结构的影响

采用微波电子回旋共振等离子体化学气相沉积(MWPECRCVD)方法,使用不同的源气体(CHF3CH4,CHF3C2H2,CHF3C6H6)体系制备了aC∶F∶H薄膜.由于CH4,C2H2,C6H6气体在等离子体中的分解反应不同导致了薄膜的沉积速率和结构上的差异.红外吸收谱的结果表明,用C6H6CHF3作为源气体沉积的薄膜中几乎不含H,而用C2H2CHF3所沉积的薄膜中的含氟量最高,其相应的CF振动峰位向高频方向偏移.薄膜的真空退火结果表明,aC∶F∶H薄膜的热稳定性除了取决于薄膜的CC键浓度外,还与CC键 关键词： 氟化非晶碳膜 电子回旋共振化学气相沉积 红外吸收光谱