Study of the peak effect phenomenon in single crystals of 2H-NbSe2

The weakly pinned single crystals of the hexagonal 2H-NbSe₂ compound have emerged as prototypes for determining and characterizing the phase boundaries of the possible order-disorder transformations in the vortex matter. We present here a status report based on the ac and dc magnetization measurements of the peak effect phenomenon in three crystals of 2H-NbSe₂, in which the critical current densities vary over two orders of magnitude. We sketch the generic vortex phase diagram of a weakly pinned superconductor, which also utilizes theoretical proposals. We also establish the connection between the metastability effects and pinning.     

Regular trends in distribution of substituted benzoic acids between organic solvents and water

The influence of physicochemical properties of organic solvents on the distribution constants of aromatic carboxylic acids between the organic and aqueous phases was examined.     

Synchronized whistlers recorded at Varanasi

Some interesting events of synchronized whistlers recorded at low latitude station Varanasi during magnetic storm period of the year 1977 are presented. The dynamic spectrum analysis shows that the component whistlers are Eckersley whistlers having dispersion 10 s^1/2 and 30 s^1/2. An attempt has been made to explain the dynamic spectra using lightning discharge generated from magnetospheric sources     

A fast-settling GaAs-enhanced frequency synthesizer

An indirect, phase-locked-loop (PLL), GaAs-enhanced frequency synthesizer with 700 ns loop settling time has been developed. The two-chip GaAs insertion reduced the size of an existing synthesizer from 90 in³ to only 30 in³. The 6.0 in×5.5 in.×0.9 in module contains a 400 gate GaAs programmable divider and a sample and hold (S/H) which improved the settling time by 77% and reduced the size by 67% over the current state-of-the-art synthesizer. Furthermore, the divider reduced power dissipation by 9.7 W and the S/H reduced power dissipation by 1.3 W     

13C and 1H NMR analysis of the nitration products of 2-amino-4-oxo-(3H)-5-trifluoromethylquinazoline and 2-amino-4-oxo-(3H)-5-fluoroquinazoline

Nitration of 2-amino-4-oxo-(3H)-5-trifluoromethylquinazoline is shown to occur exclusively at C⁶ as determined from an analysis of long range ¹H and ¹⁹F scalar couplings to ring carbons. Nitration of 2-amino-4-oxo-(3H)-5-fluoroquinazoline is found to occur both at C⁶ and C⁸ as evident from an analysis of the ¹⁹F and ¹H couplings of the ring protons.     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities     

Optoelectronic charge coupled device (OECCD) using InP MIScapacitor array

An optoelectronic charge coupled device (OECCD) which is directly compatible with an incident optical signal is proposed. The nonlinear partial differential equation consisting of optical generation and recombination is solved in one dimension using the Crank-Nicolson finite-difference scheme. The charge transfer inefficiency is the main parameter considered for the calculation     

Consequences of structural disorder on laser properties in quantumwire lasers

The effect of interface-roughness-related disorder on the electronic and optoelectronic properties of a quantum wire structure are studied. It is seen that the disorder causes strong localization in the quasi-one-dimensional system. While the electronic states are seriously perturbed, the density of states is not affected drastically. Optoelectronic properties as reflected in the interband transition related phenomenon are not found to suffer significant deterioration as a result of the disorder. However, the results suggest that intraband relaxation processes may be seriously affected because of electron (hole) states being localized in different regions of the wire