Equivalence and Singularity of Gaussian Measures on the Conic Sigma-Field

The alternative: equivalence-singularity on the conic sigma-field is established for a pair of centered Gaussian distributions and a corresponding criterion is given. The behavior of the logarithmic variation is established for the Radon–Nikodym derivative on the conic sigma-subfield. Bibliography: 6 titles.     

Terahertz characterisation of building materials

To obtain realistic models for propagation channels in future pico-cellular indoor terahertz communication systems it is necessary to know the reflective properties of building materials found in a typical office environment. The angular dependent reflection coefficients of different building materials were determined using terahertz time-domain spectroscopy in transmission geometry and Fresnel's equations. This approach is more efficient than a set of measurements in reflection geometry for different angles. Verification of the method with a set of such reflection measurements shows an excellent agreement.     

Electrohydrodynamic instability in some nematic cyanobiphenyls in an a.c. electric field

Electrohydrodynamic instability in homeotropically oriented nematic samples of 4'-n-octyl-4-cyano-biphenyl and 4'n-alkyloxy-4-cyanobiphenyl, (n = 8.9) have been studied in an a.c. electric field. The domain patterns during the instability in these compounds in a very low frequency a.c. field are very similar to those in a d.c. field. The domain patterns observed at higher frequencies have been identified as 'maltese crosses' or 'crossed isogyres'. The electro-convective 'isotropic' flows near the electrode play an important role in the observed instability.     

Burning Voltage in Atmospheric and Vacuum Short Arcs of Vanishing Length

The stepwise increase of the burning voltage of short break arcs has been found not only in a gas but also in vacuum. It is suggested that the effect is associated with the occurrence of a positive anode fall which enhances ionisation phenomena near the anode. This view is supported by the simultaneous registration of arc current, burning voltage, light emission from the anode region, of spectral lines of ions, atoms and continuum from the near anode plasma. The phenomena occur beyond a critical gap distance which can be related to the characteristic geometry of the discharge.     

Semiconductor-insulator structures in the phototargets of vidicons sensitive in the middle infrared region of the spectrum

The kinetics of electronic processes in vidicon phototargets based on semiconductor-insulator structures with a narrow-gap semiconductor is considered taking into account charge drain in the insulator layer and relaxation of the nonequilibrium depletion region in the semiconductor layer. The integration time, threshold sensitivity, and resolution at various intensities of incident radiation are estimated.     

A stochastically optimized adaptive procedure for the location of MAS auxiliary monopoles: the case of electromagnetic scattering by dielectric cylinders

A genetically optimized technique that fully automates the potentially laborious allocation of the auxiliary monopoles for the method of auxiliary sources (MAS) is presented for the problem of electromagnetic (EM) scattering by isotropic dielectric cylinders with various cross sections. The proposed technique uses as input information not only the geometry of the scatterer but also the exciting field and the material properties of the cylinders are implicitly taking part in the optimization procedure. The resulting auxiliary surfaces, where the simulating monopoles are situated, are appropriately adapted to the original boundary surface and the MAS modeling is greatly facilitated. In addition, certain considerations are taken into account in order to avoid undesirable numerical dependencies between the fictitious monopoles. Finally, the accuracy of the numerical method combined with overdetermined systems of equations is examined for isotropic cylinders of various geometries and dielectric characteristics.     

Loading aircraft for military operations

In this paper, we describe an aircraft loading problem submitted by the French military agency (DGA) as part of a more general military airlift planning problem. It can be viewed as a kind of bi-dimensional bin-packing problem, with heterogeneous bins and several additional constraints. We introduce two-phase methods for solving this NP-hard problem. The first phase consists in building good initial solutions, thanks to two fast algorithms: a list-based heuristic and a loading pattern generation method. Both algorithms call a constraint-based subroutine, able to determine quickly if the items already loaded can be reshuffled to accommodate a new object. The second phase improves these preliminary solutions using local search techniques. Results obtained on real data sets are presented.     

Banana-shaped mesogens: a new homologous series of compounds exhibiting the B7 mesophase

The synthesis and characterization of a new homologous series of compounds, the 2-cyano-1,3-phenylene bis[4-(4-n-alkoxyphenyliminomethyl)benzoates] derived from 2-cyanoresorcinol is reported. All the compounds are enantiotropic mesogens and exhibit the fascinating B₇ mesophase. The characterization of the mesophase was performed using polarizing optical microscopy, differential scanning calorimetry, X-ray diffraction and electro-optical studies.     

Novel Nakagami-m parameter estimator for noisy channel samples

A novel moment-based m parameter estimator using noisy channel samples is derived. This estimator is simpler than known estimators. Numerical results are presented to demonstrate that, under some practical fading conditions, it outperforms previous estimators.     

Fabrication of Strain-Relaxed Si<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript>/Si(001) Buffer Layers of Low Surface Roughness

The results are presented of the fabrication of strain-relaxed graded Si_{1 − x} Ge_x/Si(001) buffer layers with a maximum Ge fraction of about 0.25 that have a low density of threading dislocations (<10⁶ cm⁻²) and low surface roughness. The buffer layers are grown by atmospheric-pressure hydride CVD. It is found that chemical mechanical polishing can reduce their surface roughness to a level comparable with that of the original Si(001) substrates. It is shown that the polished buffer layers can serve as substrates for MBE-grown SiGe/Si heterostructures.__________Translated from Mikroelektronika, Vol. 34, No. 4, 2005, pp. 243–250.Original Russian Text Copyright © 2005 by Vostokov, Drozdov, Krasil’nik, Kuznetsov, Novikov, Perevoshchikov, Shaleev.