Impact of temperature cycle profile on fatigue life of solder joints

In this paper the influence of the temperature cycle time history profile on the fatigue life of ball grid array (BGA) solder joints is studied. Temperature time history in a Pentium processor laptop computer was measured for a three-month period by means of thermocouples placed inside the computer. In addition, Pentium BGA packages were subjected to industry standard temperature cycles and also to in-situ measured temperature cycle profiles. Inelastic strain accumulation in each solder joint during thermal cycling was measured by high sensitivity Moire interferometry technique. Results indicate that fatigue life of the solder joint is not independent of the temperature cycle profile used. Industry standard temperature cycle profile leads to conservative fatigue life observations by underestimating the actual number of cycles to failure.     

Microsomal and photochemical oxidation of aflatoxin B1

The UV irradiation (lambda = 362 nm) of aflatoxin B1 (AfB1) dissolved in water resulted in the formation of an oxidized product. The process was not inhibited by ionol, a routine inhibitor of the radical processes. The oxidized product was not found in the system where AfB1 was metabolized by the 3-methylcholanthrene-activated rat liver microsomes. It is suggested that the product is identical with 2,3-dihydrodiol of AfB1.     

Unified approach to best unbiased estimation in control problems and linear models

An analog of a sufficient statistic is proposed in the finite-dimensional linear space of statistics. It is shown that the unbiased estimator of the linear function of a parameter closest to a given function, expressed in terms of a minimal linearly sufficient statistic, is potentially unbiased and optimal.Translated from Statisticheskie Metody Otsenivaniya i Proverki Gipotez, pp. 51–58, 1986.     

Scientific heritage of Boris Lukich Laptev (4/23/05–1/15/89)

Biographical information on the eminent Soviet geometer Boris Lukich Laptev (4/23/05–1/15-89) is given as well as a survey of his research in the areas of differential geometry and history of mathematics.Translated from Itogi Nauki i Tekhniki, Seriya Problemy Geometrii, Vol. 21, pp.27–42, 1989.     

On an integral equation of the problem for an elastic strip with a slit

A new singular integral equation is obtained that describes the elastic equilibrium of a strip with both an inner and an edge slit (crack) and has a considerable advantage over existing equations /1–9/, etc.) from the viewpoint of a numerical realization and clarification of the analytical relationship with an analogous equation for a half-plane. Numerical results are given of a computation of the stress intensity coefficients at the tips of the inner and edge cracks that refine data in the literature.     

An experimental investigation on the nature of reverse current of silicon power pn-junctions

At this time, little importance is given to the surface component of reverse leakage current of silicon pn-junctions although reliability issues reveal device blocking weakness when performing at high voltage and temperature. Junctions which have almost the same perimeter but different area have been realized and their reverse current has been measured at room temperature and high temperature both for standard recovery and fast recovery (gold-doped or electron irradiated) pn-junctions. It is shown that for standard recovery junctions the surface component of the reverse current is the primary component from room temperature up to above 150/spl deg/C and has influence on reaching high permissible working voltages. For gold-doped or electron irradiated junctions, the bulk component is dominant at high junction temperature, but it is shown that a comparatively negligible surface component can impose lower reverse working voltages or lower junction operation temperature. The surface component may be a cause of limitation on the operation of power silicon diodes at high reverse voltage above 175-200/spl deg/C junction temperature.     

Self-broadening in the millimeter-wave spectrum of ozone

Self broadened widths of seven lines of ozone between 75 and 120 GHz have been measured at room temperature. The variation with temperature of the self-broadening parameter for three of these lines has been studied in the range 245–292°K.