Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate

In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology.     

The microstructure of Cu films deposited by the self-ion assisted technique

The microstructures of Cu films deposited by the self-ion assisted, partially ionized beam (PIB) deposition technique under two different accelerating potentials, 0 KeV and 6 KeV, are compared. The 6 KeV film shows a bimodal (111) fiber and (100) fiber texture with an abundance of twin boundaries and a relatively large average grain size with a typical lognormal distribution. The 0 KeV film consists of small, mostly (111) oriented grains with islands of abnormally large (100) grains. The controlling factors for the abnormal growth of the (100) grains are discussed in relation to the observed microstructures, showing that all factors necessary for abnormal (100) growth are present in the films.     

Effect of trapping centers of luminescent properties of bismuth orthogermanate

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 6, pp. 970–975, June, 1991.     

On a class of operators related to second-order differential equations

In the present paper, we find a class of linear homogeneous differential equations of order n + 1 (n > 1) whose fundamental system of solutions is constructed from the fundamental system of solutions of a second-order differential equation. The spectral properties of differential operators generated by these differential expressions are investigated. In particular, sufficient conditions are obtained for the coefficients of a second-order differential equation under which the case of maximal deficiency indices is realized. Dedicated to the memory of B. M. Levitan     

A method for computing the IR radiation of molecular gas jets in the volume approximation

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 55, No. 3, pp. 478–484, September, 1991.     

Self-similarity in diffraction by a self-similar fractal screen

Using the Sierpinski gasket as an example, it has been shown here that the paraxial Fraunhoffer-zone diffracted field of a self-similar fractal screen also exhibits self-similarity. This also establishes that fractal structures can be used with great profit in problems involving array syntheses. Recently, it has been shown that the Sierpinski gasket is itself a member of a much wider class of gaskets, and the potential for the use of fractal structures in electromagnetic (EM) problems may be vast indeed.     

Simulation of magnetic component models in electric circuitsincluding dynamic thermal effects

It is essential in the simulation of power electronics applications to model magnetic components accurately. In addition to modeling the nonlinear hysteresis behavior, eddy currents and winding losses must be included to provide a realistic model. In practice the losses in magnetic components give rise to significant temperature increases which can lead to major changes in the component behavior. In this paper a model of magnetic components is presented which integrates a nonlinear model of hysteresis, electro-magnetic windings and thermal behavior in a single model for use in circuit simulation of power electronics systems. Measurements and simulations are presented which demonstrate the accuracy of the approach for the electrical, magnetic and thermal domains across a variety of operating conditions, including static thermal conditions and dynamic self heating     

Experimental evaluation of capacity statistics for short VDSL loops

We assess the capacity potential of very short very-high data-rate digital subscriber line loops using full-binder channel measurements collected by France Telecom R&D. Key statistics are provided for both uncoordinated and vectored systems employing coordinated transmitters and coordinated receivers. The vectoring benefit is evaluated under the assumption of transmit precompensation for the elimination of self-far-end crosstalk, and echo cancellation of self-near-end crosstalk. The results provide useful bounds for developers and providers alike.