Synthesis and antimycobacterial activity of purine conjugates with (S)-lysine and (S)-ornithine

1. Download high-res image (115KB)
2. Download full-size image

     

Switched-Current Filters Revisited: Square-Root Domain Sampled-Data Filters

In this brief, the well-known switched-current (SI) filtering technique is revisited using the concept of the square-root domain (SRD) filtering. It is proved that SI filters are a subclass of the SRD filters, where sampled-data signal processing is performed. This is achieved by considering typical lossless and lossy SRD sampled-data integrator configurations, using a set of complementary SRD operators which are based on the quadratic I-V relationship of MOS transistor operated in the saturation. Circuit examples are given, where linear-domain integrator and third-order filter configurations were derived using appropriate SRD sampled-data building blocks     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

Analysis of feedback for higher order polarization-mode dispersion mitigation of NRZ 40-Gb/s optical transmission

First-order polarization-mode dispersion (PMD) compensation by means of a polarization controller and a differential delay line is not sufficient to guarantee error-free transmission for 40-Gb/s channels when higher order effects severely increase signal distortion. Higher order mitigation is possible by cascading more than one first-order block. However, only two-stage or three-stage devices remain simple enough to be actually controlled. The performance of such higher order PMD compensators is evaluated by means of numerical simulations. Two different feedback signals have been used, demonstrating that first-order and higher order PMD distortion of nonreturn-to-zero (NRZ) pulses at 40 Gb/s can be strongly mitigated for instantaneous values of the differential group delay (DGD) up to the bit slot, when the compensator is properly controlled.     

Wavelength-tunable 40-GHz picosecond harmonically mode-locked fiber laser source

We demonstrate a novel 40-GHz mode-locked fiber laser that utilizes a single active device to provide both gain and mode-locking. The laser produces pulses as short as 2.2 ps, is tunable over a 27-nm band centered at 1553 nm, and exhibits long-term stability without cavity-length feedback control. The pulse train at 1556 nm was used in a 40-Gb/s transmission experiment over 45 km with a low 0.4-dB power penalty.     

Multilayer power printed structures suitable for controlling EMI noises generated in power converters

Electromagnetic interference (EMI) noises generated in power converters are diffused on the surface of conductors. This means influences occur from radiated EMI noises emitted from power transmission lines as well as conducted EMI noises transmitted from them. EMI noises diffusing on the surface of conductors are generally difficult to control using conventional concentrated constant theory. Thus, a new approach based on distributed constant circuit theory is needed in order to control EMI noises. A power converter structure to control EMI noises using multilayer power printed circuit technology is studied in this paper. A structure which can control EMI noises should simultaneously satisfy two conditions, i.e., one to shut down and one to attenuate EMI noises. The structure satisfying these conditions is studied through simulations using the Transmission-Line Modeling Method. The simulations show that the diffusion of EMI noises is controlled by dividing the flow of currents produced by EMI noises into the horizontal and perpendicular directions. That is, the horizontal current flow is controlled inside using the differences in the resistance produced from differences between inner and outer diameter of power transmission lines and the perpendicular current flow can be controlled by properly designing the thickness of the dielectric layer sandwiched between P-and N-power transmission lines with the symmetrical structure. Moreover, it is confirmed by simulations and experiments that the attenuation of EMI noises is affected by the width of the power transmission lines. It is expected that the results obtained in this paper can provide important rules when designing power converters with EMI noise control functions which use the multilayer power printed circuit technology.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.