Thermoheliox: effect on the functional hemodynamics of the human brain

A kinetic study of the effect of thermoheliox (inhalation of a helium and oxygen mixture, 70 °C) on the functional hemodynamics of the human brain by functional magnetic resonance imaging was carried out. The dynamic responses of the BOLD signal were found to be biphasic. An empirical equation describing the first phase of the hemodynamic response to visual stimulus was proposed. It was shown that preliminary inhalation of thermoheliox stimulates the hemodynamic responses by slowing down the vasoconstriction.

     

矢量语音传感器微阵列

人工智能的普及促进了语音交互技术的发展,语音传感器阵列作为智能语音交互的硬件前端,成为语音交互领域的前沿研究方向.矢量语音传声器自有的偶极子指向性、零点深度以及阵列体积小便于集成的特点特别符合语音交互技术对硬件设备的要求.基于此,通过采用两组矢量敏感单元"共点正交"形成矢量微阵列实现声源空间锐化波束指向,其不受瑞利限与空间采样率限制,与传统空间离散分布的声压麦克风阵列有着本质区别,是矢量微阵列的核心优势所在.矢量微阵列传声器弥补了现有双麦阵列的不足,具有更为广阔的应用前景,作为智能语音交互的硬件前端,对推动智能语音交互领域的发展具有重要意义.     

High-performance nonfused ring electron acceptor with a steric hindrance induced planar molecular backbone

Three nonfused ring electron acceptors (NFREAs) TTC6,TT-C8T and TT-TC8 were purposefully designed and synthesized.The molecular geometry can be adjusted by the steric hindrance of lateral substituents.According to the DFT calculations,from TTC6 to TT-C8T and TT-TC8,planarity of the molecular backbone is gradually improved,accompanying with the enhancing of intramolecular charge transfer effect.As for TT-TC8,the two phenyl substituents are almost perpendicular to the molecular backbone,which endues the acceptor with good solubility and suppresses it to form over-aggregation.Multidirectional regular molecular orientation and closer molecular stacking are formed in TT-TC8 film.As a result,TT-TC8 based devices afford the highest PCE of 13.13%,which is much higher than that of TTC6 (4.41%) and TT-C8T (10.42%) and among the highest PCE values based on NFREAs.     

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...     

New Design of Wavelets Based on the Convolution of Compactly Supported Functions with a Rectangular Pulse

Journal of Communications Technology and Electronics - A new design of wavelets based on the convolution of a compactly supported function with a rectangular pulse is proposed and theoretically...     

Modern Photodetector IR-Modules

Journal of Communications Technology and Electronics - In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of...     

Superradiant Emission from Coherent Excitons in van Der Waals Heterostructures

Recent advancements in isolation and stacking of layered van der Waals materials have created an unprecedented paradigm for demonstrating varieties of 2D quantum materials. Rationally designed van der Waals heterostructures composed of monolayer transition-metal dichalcogenides (TMDs) and few-layer hBN show several unique optoelectronic features driven by correlations. However, entangled superradiant excitonic species in such systems have not been observed before. In this report, it is demonstrated that strong suppression of phonon population at low temperature results in a formation of a coherent excitonic-dipoles ensemble in the heterostructure, and the collective oscillation of those dipoles stimulates a robust phase synchronized ultra-narrow band superradiant emission even at extremely low pumping intensity. Such emitters are in high demand for a multitude of applications, including fundamental research on many-body correlations and other state-of-the-art technologies. This timely demonstration paves the way for further exploration of ultralow-threshold quantum-emitting devices with unmatched design freedom and spectral tunability.     

Behavior of Andreev states for topological phase transition

Theoretical and Mathematical Physics - We consider three one-dimensional superconducting structures: 1) the one with $$p$$ -wave superconductivity; 2) the main experimental model of a nanowire with...     

Statistical Piezotronic Effect in Nanocrystal Bulk by Anisotropic Geometry Control

Utilizing inner-crystal piezoelectric polarization charges to control carrier transport across a metal-semiconductor or semiconductor–semiconductor interface, piezotronic effect has great potential applications in smart micro/nano-electromechanical system (MEMS/NEMS), human-machine interfacing, and nanorobotics. However, current research on piezotronics has mainly focused on systems with only one or rather limited interfaces. Here, the statistical piezotronic effect is reported in ZnO bulk composited of nanoplatelets, of which the strain/stress-induced piezo-potential at the crystals’ interfaces can effectively gate the electrical transport of ZnO bulk. It is a statistical phenomenon of piezotronic modification of large numbers of interfaces, and the crystal orientation of inner ZnO nanoplatelets strongly influence the transport property of ZnO bulk. With optimum preferred orientation of ZnO nanoplatelets, the bulk exhibits an increased conductivity with decreasing stress at a high pressure range of 200–400 MPa, which has not been observed previously in bulk. A maximum sensitivity of 1.149 µS m⁻¹ MPa⁻¹ and a corresponding gauge factor of 467–589 have been achieved. As a statistical phenomenon of many piezotronic interfaces modulation, the proposed statistical piezotronic effect extends the connotation of piezotronics and promotes its practical applications in intelligent sensing.