Direct adaptive control of nonminimum phase systems using integralaction

A direct adaptive control scheme is proposed for nonminimum-phase systems in which controller parameters are estimated from the recursive least-squares algorithm and additional auxiliary parameters are obtained from the proposed polynomial identity. A local convergence is guaranteed without any extra condition. Integral action is incorporated into the adaptive controller to eliminate the steady-state error and to satisfy a condition of the unique solution for the polynomial identity. The control law used in this scheme is based on the set-point-on-I-only proportional-integral-derivative (PID) structure     

A Promising MoO_x-based Catalyst for n-Heptane Isomerization

The increasing demand for higher-octane gasoline and the regulations limiting the amount of aromatics in the fuel motivate the interest in catalytic isomerization of n-alkanes. In the last ten years, transition metal oxides or oxycarbides based on molybdenum or tungstate have attracted much attention due to their high activity and isomerization selectivity compared to the conventional bifunctional supported platinum catalyst and high resistance to sulphur and nitrogen catalyst poisons1-5. Ma…     

Pulse stabilisation in harmonically FM modelocked erbium fibre ring laser with DFBLD

A new pulse stabilisation scheme for a harmonically frequency modulated (FM) modelocked erbium fibre ring laser using a distributed feedback laser diode (DFBLD) is presented. More than 65 dB supermode noise suppression in the RF spectrum was obtained with the proposed method. Effective reduction of supermode noise can be accomplished as the DFBLD in the fibre laser acts not only as a fast-gain saturated medium but also as an optical bandpass filter for suppressing supermode noise in a harmonically modelocked laser system.     

TMS320C67系列EMIF与异步FIFO存储器的接口设计

介绍了TI公司TMS320C67系列DSP的EMIF(外部存储器接口)与异步FIFO(先进先出)存储器的硬件接口设计,着重描述了用EDMA(扩展的直接存储器访问)方式读取FIFO存储器数据的软件设计流程,最后说明了在选择FIFO存储器时应注意的问题.由于EMIF的强大功能,不仅具有很高的数据吞吐率,而且可以与不同类型的同步、异步器件进行无缝连接,使硬件接口电路简单,调试方便.运用EDMA的方式进行数据传输,由EDMA控制器完成DSP存储空间内的数据搬移,这样可以最大限度地节省CPU的资源,提高整个系统的运算速度.     

High dielectric constant thin film EBG power/ground network for broad-band suppression of SSN and radiated emissions

We experimentally demonstrated the great advantages of a high dielectric constant thin film electromagnetic bandgap (EBG) power distribution network (PDN) for the suppression of power/ground noises and radiated emissions in high-performance multilayer digital printed circuit boards (PCBs). Five-layer test PCBs were fabricated and their scattering parameters measured. The power plane noise and radiated emissions were measured, investigated and related to the PDN impedance. This successfully demonstrated that the bandgap of the EBG was extended more than three times, covering a range of hundreds of MHz using a 1-cm /spl times/ 1-cm EBG cell, the SSN was reduced from 170 mV to 10 mV and the radiated emission was suppressed by 22 dB because of the high dielectric constant thin film EBG power/ground network.     

A Generalization of the Mean Size Formula of Wavelet Packets in Lp

The purpose of this paper is to investigate the mean size formula of wavelet packets in Lp for 0 〈 p ≤ ∞. We generalize a mean size formula of wavelet packets given in terms of the p-norm joint spectral radius and we also give some asymptotic formulas for the Lp-norm or quasi-norm on the subdivision trees. All results will be given in the general setting,     

W-band divide-by-3 frequency divider using 0.1 /spl mu/m InAlAs/InGaAs metamorphic HEMT technology

A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.     

2/spl times/4 optical add-drop module with no difference in propagation length

We developed a micromachined X-type 2/spl times/4 optical add-drop module (OADM) featuring no difference in propagation length. Four pairs of lensed fibers are aligned in "X" position, and four micromirrors are located between the pairs of optical fibers. The OADM was fabricated utilizing a silicon-on-insulator process. Electrostatic comb actuators can be driven up to 90 /spl mu/m to change the light path within 1 ms. The insertion loss and the on-off ratio were less than 3 and 70 dB, respectively. The loss uniformity in every channel was 1.5 dB.     

A 0.6–2.7 GHz Semidynamic Frequency Divide-by-3 Utilizing Wideband RC Polyphase Filter in 0.18 $mu$m CMOS

A wideband complementary metal oxide semiconductor (CMOS) semidynamic frequency divide-by-3 covering more than two octave bandwidths is presented. The wideband operation without requiring a quadrature signal source is realized by employing a three-stage RC polyphase filter. The transfer function analysis on Type-II two- and three-stage polyphase filters is performed to provide analytic solutions of the peak phase error and peak attenuation. Implemented in 0.18 mum CMOS, the divide-by-3 operates over the input frequency range between 0.6 and 2.7 GHz while dissipating 15 mA from a 1.8 V supply.     

Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.