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71.
We show how the traditional grid based method for finding neutrino oscillation parameters m2 and tan 2θ can be combined with an optimization technique,Differential Evolution(DE),to get a significant decrease in computer processing time required to obtain minimal chi-square(χ2) in four different regions of the parameter space.We demonstrate efficiency for the two-neutrinos case.For this,the χ2 function for neutrino oscillations is evaluated for grids with different density of points in standard allowed regions of the parameter space of m2 and tan 2θ using experimental and theoretical total event rates of chlorine(Homestake),Gallex+GNO,SAGE,Superkamiokande,and SNO detectors.We find that using DE in combination with the grid based method with small density of points can produce the results comparable with the one obtained using high density grid,in much lesser computation time.  相似文献   
72.
Single-crystal Eu3+-doped wurtzite ZnO micro- and nanowires were synthesized by chemical vapor deposition. The nanostructures grew via a self-catalytic mechanism on the walls of an alumina boat. The structure and properties of the doped ZnO were characterized using X-ray diffraction, energy-dispersive X-ray spectroscopy, scanning and transmission electron microscopy, and photoluminescence (PL) methods. A 10-min synthesis yielded vertically grown nanowires of 50–400 nm in diameter and several micrometers long. The nanowires grew along the ±[0001] direction. The Eu3+ concentration in the nanowires was 0.8 at.%. The crystal structure and microstructure of were compared for Eu3+-doped and undoped ZnO. PL spectra showed a red shift in emission for Eu3+-doped (2.02 eV) compared to undoped ZnO nanowires (2.37 eV) due to Eu3+ intraionic transitions. Diffuse reflectance spectra revealed widening of the optical bandgap by 0.12 eV for Eu3+-doped compared to undoped ZnO to yield a value of 3.31 eV. Fourier-transform infrared spectra confirmed the presence of europium in the ZnO nanowires.  相似文献   
73.
ABSTRACT

We measured the electric conductivity of large (25?×?50?mm) graphene films as a function of number of layers in the range of 1–20 layers. We also calculated the energy gap for such samples using density function theory. Our results showed a conductivity slightly above that of ITO for monolayer graphene and an exponential decrease as the number of graphene layers increased. Both experimental and simulation results showed a convergence of graphene into graphite at as little as 18–20 layers.  相似文献   
74.
A magnetic induction threshold B c above which the magnetoplastic effect — depinning of dislocations from paramagnetic pinning centers — can be observed in samples placed in a magnetic field is predicted and observed in Al, NaCl, and LiF crystals. The existence of a threshold is associated with the fact that for B<B c the spin-lattice relaxation time τsl in a dislocation-paramagnetic-center system is less than the time required for spin evolution in a magnetic field resulting in the removal of the spin forbiddenness of an electronic transition that “switches off” the dislocation-pinning-center interaction. It is shown that the threshold field B c is sensitive to temperature and x-ray irradiation of the samples. A new method for measuring the spin-lattice relaxation time in paramagnetic centers on dislocations is proposed on the basis of the data obtained. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 8, 628–633 (25 April 1996)  相似文献   
75.
The nature (time variation) of response magnetizations m(wt) of the kinetic cylindrical Ising nanotube in the presence of a periodically varying external magnetic field h(wt) is studied by employing the effective-field theory (EFT) with correlations as well as the Glauber-type stochastic dynamics. We have determined the time variations of m(wt) and h(wt) for various temperatures, and investigated the dynamic magnetic hysteresis behavior. Temperature dependence of the dynamic magnetizations, hysteresis loop areas and correlations are investigated in order to characterize the nature (first- or second-order) of the dynamic transitions as well as to obtain the dynamic phase transition temperatures. We also present the dynamic phase diagrams in the three different planes and compare the results of the equilibrium and nonequilibrium states. The phase diagrams exhibit dynamic tricritical, isolated critical, multicritical and triple points. The results are in good agreement with some experimental and theoretical results.  相似文献   
76.
We study the effect of time-dependent linear and quadratic potentials on the profile and dynamics of rogue waves represented by a Peregrine soliton. The Akhmediev breather, Ma breather, bright soliton, Peregrine soliton, and constant wave (CW) are all obtained by changing the value of one parameter in the general solution corresponding to the amplitude of the input CW. The corresponding solutions for the case with linear and quadratic potentials were derived by the similarity transformation method. While the peak height and width of the rogue wave turn out to be insensitive to the linear potential, the trajectory of its center-of-mass can be manipulated with an arbitrary time-dependent slope of the linear potential. With a quadratic potential, the peak height and width of the rogue wave can be arbitrarily manipulated to result, for a special case, in a very intense pulse.  相似文献   
77.
78.
In view of CdS growth is very impotent for technological importance especially solar applications; synthesis of this material remains a topic of great interest for researchers by means of an economically and technically viable method. In the present paper, Cd/CdS/n–Si/Au–Sb sandwich structure has been grown by Successive Ionic Layer Adsorption and Reaction (SILAR) technique. For investigating the structural properties, X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) measurements have been performed and it has been seen that films exhibit polycrystalline behavior. The capacitance–voltage (CV) and conductance/w-voltage (G/wV) characteristics of Cd/CdS/n–Si/Au–Sb structure have been investigated by considering series resistance and interface states effects. These measurements have been done in the −4 V, 4 V voltage range and in the frequency range of 10 kHz–3 MHz at room temperature. It is seen that, the series resistance (Rs) and interface state density have been strongly depend on frequency. The barrier height, donor concentration, diffusion potential parameters have been determined from the linear C−2V plot. The barrier height values are obtained between 0.495 and 0.796 eV and doping density values have been ranged from 1.455 × 1014 to 1.999 × 1014 cm−3respectively. The capacitance–frequency (Cf) and conductance/w-frequency (G/wf) characteristics of Cd/CdS/n–Si/Au–Sb structures have been measured at the various biases 0.00–0.14 V at room temperature. The energy distribution of the interface states (Nss) and their relaxation time (τ) have been determined from the forward bias capacitance–frequency characteristics. The Nss and τ values have ranged from 2.01 × 1012 cm−2 eV−1and 9.68 × 10−4 s in (Ec-0.45) eV–2.86 × 1013 cm−2 eV−1 and 3.81 × 10−4 s in (Ec-0.75) eV, respectively.  相似文献   
79.
New eight lanthanide metal complexes were prepared. These complexes were characterized by elemental analysis, molar conductivity measurements, spectral analysis (1H NMR, FT-IR, UV–vis), luminescence and thermal gravimetric analysis. All Ln(III) complexes were 1:1 electrolytes as established by their molar conductivities. The microanalysis and spectroscopic analysis revealed eight-coordinated environments around lanthanide ions with two nitrate ligands behaving in a bidentate manner. The other four positions were found to be occupied with tetradentate LIII ligand. Tb–LIII and Sm–LIII complexes exhibited characteristic luminescence emissions of the central metal ions and this was attributed to efficient energy transfer from the ligand to the metal center. The LIII and Ln–LIII complexes showed antibacterial activity against a number of pathogenic bacteria.  相似文献   
80.
The structure of the quantum-well valence band in a Ge(111) two-dimensional layer is calculated by the self-consistent method. It is shown that the effective mass characterizing the motion of holes along the germanium layer is almost one order of magnitude smaller than the mass for the motion of heavy holes along the [111] direction in a bulk material (this mass is responsible for the formation of quantum-well levels). This creates a unique situation in which a large number of subbands appear to be populated at moderate values of the layer thickness d w and the hole concentration p s . The depopulation of two or more upper subbands in a 38-nm-thick germanium layer at a hole concentration p s = 5 × 1015 m?2 is revealed from the results of measuring the magnetoresistance in a strong magnetic field aligned parallel to the germanium layers. The destruction of the quantum Hall state at a filling factor ν = 1 indicates that the two lower subbands merge together in a self-formed potential profile of the double quantum well. It is demonstrated that, in a quasi-two-dimensional hole gas, the latter effect should be sensitive to the layer strain.  相似文献   
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