Semiconductor optical amplifier for wavelength conversion in subcarrier multiplexed systems

The fabrication and performance of a InGaAsP-InP semiconductor optical amplifier for wavelength conversion in subcarrier multiplexed system is described. The amplifier is of the buried facet design and has polarization and reflectivity gain ripple of less than 1 dB. Using subcarrier multiplexing, multiple 50-Mb/s data streams at a wavelength of 1.553 /spl mu/m are infected into the amplifier. The gain nonlinearity of the amplifier transfers the data to a different wavelength of light simultaneously injected into the amplifier. Error free retrieval of subcarrier multiplexed data has been demonstrated for the wavelength converted output. The small signal bandwidth of the wavelength conversion process is 5 GHz. Calculation suggests that higher bandwidth is feasible at higher input powers at the expense of lower modulation transfer during wavelength conversion.     

A multilayered mobility management scheme for auto-configured wireless IP networks

The convergence of wireless and IP has led to the need for IP to handle mobility. The Mobile IP protocol was developed to facilitate IP mobility. However, it has a number of shortcomings for dynamically auto-configured networks. Mobility protocols like Mobile IP with Location Registers (MIP-LR) and Session Initiation Protocol (SIP) have been developed to address some of its shortcomings. Micromobility protocols like Cellular IP have been developed to address other shortcomings of Mobile IP. We present a new integrated mobility management scheme that advantageously combines the strengths of SIP and MIP-LR with the benefits of a micromobility management protocol similar to Cellular IP. A prototype implementation of our scheme is explained, and lessons learned in the prototyping process are presented.     

CW electrooptical properties of InGaAsP(λ = 1.3 µm) buried-heterostructure lasers

The fabrication procedure, electrical properties, optical-bean characteristics, spectral characteristics, and temperature dependence of emission wavelength and threshold of InGaAsP buried-heterostructure (BH) lasers emitting at 1.3 μm are described. The dimensional requirements for fundamental-transverse mode operation have been determined. BH devices are characterized by low threshold currents, fundamental transverse mode operation, linear light output, and narrow spectral width. For 380 μm long devices threshold currents of 40 mA, slope efficiencies of 18 percent, forward resistance of 5 Ω, and T0values of 75 K have been attained.     

New algorithms for constrained minimax optimization

A constrained minimax problem is converted to minimization of a sequence of unconstrained and continuously differentiable functions in a manner similar to Morrison's method for constrained optimization. One can thus apply any efficient gradient minimization technique to do the unconstrained minimization at each step of the sequence. Based on this approach, two algorithms are proposed, where the first one is simpler to program, and the second one is faster in general. To show the efficiency of the algorithms even for unconstrained problems, examples are taken to compare the two algorithms with recent methods in the literature. It is found that the second algorithm converges faster with respect to the other methods. Several constrained examples are also tried and the results are presented.     

Macrocyclic paracyclophane synthesis

Macrocyclic stilbene derivatives are prepared using strong base to couple the terminal carbons of 1,12-bis-[4-chloromethylphenyl]-dodecane and its homologs.     

Coefficients of maximally flat nonrecursive digital filters

A general method is presented for determining the coefficients of maximally flat nonrecursive digital filters. Recursive relations with integer coefficients are derived for these coefficients by explicit calculations imitating Crout's method for solving the linear equations obtained by setting the derivatives of the symmetric, linear phase transfer function to zero at w = 0 and w = π. For a given order of the filter, the amount of computation required in this method is uniformly the same for any combination of permissible degrees of flatness at w = 0 and w = π.     

1.3 ?m InGaAsP DCPBH multiquantum-well lasers

We report the fabrication and performance characteristics of InGaAsP double-channel planar buried heterostructure (DCPBH) lasers with multiquantum-well active layers emitting at 1.3 ?m. These lasers have threshold currents in the range 40?50 mA at 30°C, external differential quantum efficiencies of ?50% at 30°C and T0 values ?160 to 180 K in the temperature range 10?60°C.     

Criterion for improved linearity of 1.3-µm InGaAsP-InP buried-heterostructure lasers

Nonlinearities in tile light-current characteristics of planar-active buried-heterostructure (BH) lasers are associated with higher order mode transitions, spectral broadening and, in some cases, the onset of TM polarized stimulated emission. Measurements and calculations are presented which show that these nonlinearities appear at higher power in devices with reduced active volume. These results provide a practical guide to the fabrication of "kink-free" 1.3-μm InGaAsP buried-heterostructure lasers for use in high-bit-rate fiber communication systems.     

High brightness and reliable AlGaInP-based light-emitting diode for POF data links

High brightness and reliability operation ring light-emitting diode (LED) is fabricated for plastic optical fiber (POF) link using the distributed Bragg reflector (DBR) mirror and antireflection (AR) coating. The ring LED exhibited optical output as high as 3.5 mW at the bias current of 100 mA. Furthermore, the projection lifetime is also estimated to be 1/spl times/10/sup 6/ h at a 35-mA data-link operating current and ambient temperature of 60/spl deg/C.     

High contrast optical modulator based on electrically tunablepolarization rotation and phase retardation in uniaxially strained (100)multiple quantum wells

We report a novel approach to the design of normal incidence multiple quantum well light modulators. The quantum confined Stark effect is utilized to tune the light polarization rotation and phase retardation created by a thermally induced in-plane anisotropic strain. An exceedingly high contrast ratio of 5000:1 is demonstrated for a normally-on device at room temperature